BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •AEC Qualified •PPAP Capable •Pb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS(on) = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drain-Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp ≤ 50 ms) Drain Current Continuous (Note 1) Pulsed (Note 2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range N-Channel D MAXIMUM RATINGS Symbol Value Unit VDS 200 Vdc G VGS VGSM ±20 ±30 Vdc Vpk S mAdc MARKING DIAGRAM ID IDM 250 500 PD 350 mW TJ, Tstg -55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TO-92 CASE 29-11 STYLE 30 1 2 A xxx YWWG G 3 xxx = BS107 or BS107A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping TO-92 1000 Units/Box BS107G TO-92 (Pb-Free) 1000 Units/Box BS107A TO-92 1000 Units/Box TO-92 (Pb-Free) 1000 Units/Box TO-92 2000/Ammo Pack TO-92 (Pb-Free) 2000/Ammo Pack BS107 BS107AG BS107ARL1 BS107ARL1G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 5 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero-Gate-Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS - - 30 nAdc Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) V(BR)DSX 200 - - Vdc IGSS - 0.01 10 nAdc Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 - 3.0 Vdc Static Drain-Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) - - 28 14 - 4.5 4.8 6.0 6.4 OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 3) W SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 60 - pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss - 6.0 - pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss - 30 - pF gfs 200 400 - mmhos Turn-On Time ton - 6.0 15 ns Turn-Off Time toff - 12 15 ns Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) SWITCHING CHARACTERISTICS 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 W INPUT Vout 23 PULSE GENERATOR 20 dB 50 W ATTENUATOR Vin 40 pF toff 90% 90% 50 50 ton 10% OUTPUT Vout INVERTED 1M 10 V INPUT Vin 90% 50% PULSE WIDTH 50% 10% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS107, BS107A 200 180 VGS = 0 V 160 5.0 VGS = 10 V 250 mA C, CAPACITANCE (pF) VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 10 2.0 1.0 100 mA 0.5 140 120 100 Ciss 80 60 40 0.2 20 0.1 -55 -35 -15 85 105 +5.0 25 45 65 TJ, JUNCTION TEMPERATURE (°C) 125 0 145 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 0.7 0.7 0.6 I D(on) , DRAIN CURRENT (AMPS) 10 V VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 5.0 6.0 7.0 2.0 3.0 4.0 8.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 9.0 10 5.0 V 0.5 0.4 0.3 4.0 V 0.2 0.1 3.0 V 0 Figure 5. Transfer Characteristic 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 6. Output Characteristic 0.7 10 V 0.6 0.5 5.0 V 0.4 0.3 4.0 V 0.2 0.1 3.0 V 1.0 50 Figure 4. Capacitance Variation 0.8 ID(on), DRAIN CURRENT (AMPS) ID(on) , DRAIN CURRENT (AMPS) Figure 3. On Voltage versus Temperature 0 Coss Crss 2.0 3.0 4.0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 3 5.0 18 20 BS107, BS107A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K D X X G J H V C SECTION X-X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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