Intersil EL8108IL Video distribution amplifier Datasheet

EL8108
®
Data Sheet
PRELIMINARY
June 7, 2004
FN7417
Video Distribution Amplifier
Features
The EL8108 is a dual current feedback
operational amplifier designed for
video distribution solutions. This
device features a high drive capability of 450mA while
consuming only 5mA of supply current per amplifier and
operating from a single 5V to 12V supply.
• Drives up to 450mA from a +12V supply
The EL8108 is available in the industry standard 8-pin SO as
well as the thermally-enhanced 16-pin QFN package. Both
are specified for operation over the full -40°C to +85°C
temperature range. The EL8108 has control pins C0 and C1
for controlling the bias and enable/disable of the outputs.
The EL8108 is ideal for driving multiple video loads while
maintaining linearity.
• 20VP-P differential output drive into 100Ω
• -85dBc typical driver output distortion at full output at
150kHz
• -70dBc typical driver output distortion at 3.75MHz
• Low quiescent current of 5mA per amplifier
• 300MHz bandwidth
Applications
• Video distribution amplifiers
Pinouts
EL8108
(8-PIN SO)
TOP VIEW
Ordering Information
PART
NUMBER
PACKAGE
TAPE & REEL
PKG. DWG. #
EL8108IS
8-Pin SO
-
MDP0027
EL8108IS-T7
8-Pin SO
7”
MDP0027
EL8108IS-T13
8-Pin SO
13”
MDP0027
INA+ 3
EL8108IL
16-Pin QFN
-
MDP0046
GND 4
EL8108IL-T7
16-Pin QFN
7”
MDP0046
EL8108IL-T13
16-Pin QFN
13”
MDP0046
OUTA 1
8 VS
INA- 2
+
7 OUTB
6 INB+
5 INB+
EL8108
(16-PIN QFN)
TOP VIEW
0.03
0.01
1
1
0.03
0.01
NC 1
2
1
0.05
0.02
INA- 2
2
2
0.06
0.03
INA+ 3
3
2
0.08
0.03
GND 4
3
3
0.11
0.03
2
0
0.04
0.01
3
0
0.05
0.02
4
0
0.07
0.02
5
0
0.08
0.03
6
0
0.10
0.03
1
13 OUTB
0
12
AMP B
11
+
10
POWER
CONTROL
9
LOGIC
AMP A
+
NC
INBINB+
C1
C0 8
1
14 VS+
DIFF PHASE
VS- 7
DIFF GAIN
NC 6
150Ω
NC 5
150Ω
15 NC
16 OUTA
TABLE 1.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL8108
Absolute Maximum Ratings (TA = 25°C)
VS+ Voltage to Ground . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.2V
VIN+ Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS+
Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Ambient Operating Temperature Range . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-60°C to +150°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS = 12V, RF = 750Ω, RL = 100Ω connected to mid supply, TA = 25°C, unless otherwise specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
BW
HD
SR
-3dB Bandwidth
Total Harmonic Distortion, Differential
Slew Rate, Single-ended
RF = 500Ω, AV = +2
200
MHz
RF = 500Ω, AV = +4
150
MHz
-83
dBc
f = 4MHz, VO = 2VP-P, RL = 100Ω
-70
dBc
f = 8MHz, VO = 2VP-P, RL = 100Ω
-60
dBc
f = 16MHz, VO = 2VP-P, RL = 100Ω
-50
dBc
f = 200kHz, VO = 16VP-P, RL = 50Ω
VOUT from -3V to +3V
-72
600
800
1100
V/µs
DC PERFORMANCE
VOS
Offset Voltage
-25
+25
mV
∆VOS
VOS Mismatch
-3
+3
mV
ROL
Transimpedance
2.5
MΩ
5
µA
VOUT from -4.5V to +4.5V
0.7
1.4
INPUT CHARACTERISTICS
IB+
Non-Inverting Input Bias Current
-5
IB-
Inverting Input Bias Current
-20
5
+20
µA
∆IB-
IB- Mismatch
-18
0
+18
µA
eN
Input Noise Voltage
6
nV√ Hz
iN
-Input Noise Current
13
pA/√ Hz
±5
V
VS = ±6V, RL = 25Ω to GND
±4.7
V
Output Current
RL = 0Ω
450
mA
VS
Supply Voltage
Single supply
4.5
IS (EL8108IS only)
Supply Current, Maximum Setting
All outputs at mid supply
11
All outputs at 0V, C0 = C1 = 0V
IS+ (medium power) Positive Supply Current per Amplifier
IS+ (low power)
OUTPUT CHARACTERISTICS
VOUT
IOUT
Loaded Output Swing (single ended)
VS = ±6V, RL = 100Ω to GND
±4.8
SUPPLY
13
V
14.3
18
mA
11
14.3
18
mA
All outputs at 0V, C0 = 5V, C1 = 0V
7
8.9
11
mA
Positive Supply Current per Amplifier
All outputs at 0V, C0 = 0V, C1 = 5V
3.7
4.5
5.5
mA
IS+ (power down)
Positive Supply Current per Amplifier
All outputs at 0V, C0 = C1 = 5V
0.1
0.5
mA
IINH, C0 or C1
C0, C1 Input Current, High
C0, C1 = 5V
90
125
160
µA
IINL, C0 or C1
C0, C1 Input Current, Low
C0, C1 = 0V
-5
+5
µA
SUPPLY (EL8108IL ONLY)
IS+ (full power)
Positive Supply Current per Amplifier
2
EL8108
Typical Performance Curves
22
22
VS = ±6V, AV = 5
20 RL = 100Ω DIFF
VS = ±6V, AV = 5
20 RL = 100Ω DIFF
18
14
12
RF = 750Ω
10
RF = 1kΩ
8
6
4
10M
FREQUENCY (Hz)
100M
2
100K
500M
18
22
GAIN (dB)
GAIN (dB)
RF = 750Ω
10
RF = 1kΩ
12
4
10
8
100K
500M
FIGURE 3. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (1/2 POWER MODE)
RF = 1kΩ
10M
FREQUENCY (Hz)
1M
100M
500M
FIGURE 4. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (FULL POWER MODE)
28
28
24
24
VS = ±6V, AV = 10
26 RL = 100Ω DIFF
VS = ±6V, AV = 10
26 RL = 100Ω DIFF
RF = 243Ω
20
RF = 500Ω
18
RF = 750Ω
16
RF = 1kΩ
14
18
RF = 243Ω
16
14
12
10
10
100M
500M
FIGURE 5. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (3/4 POWER MODE)
3
RF = 750Ω
20
12
10M
FREQUENCY (Hz)
RF = 500Ω
22
GAIN (dB)
22
1M
RF = 750Ω
16
6
100M
RF = 500Ω
18
14
10M
FREQUENCY (Hz)
RF = 243Ω
20
8
8
100K
500M
24
RF = 243Ω
1M
100M
VS = ±6V, AV = 10
26 RL = 100Ω DIFF
RF = 500Ω
14
2
100K
10M
FREQUENCY (Hz)
1M
28
16
12
RF = 1kΩ
FIGURE 2. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (3/4 POWER MODE)
22
VS = ±6V, AV = 5
20 RL = 100Ω DIFF
RF = 750Ω
10
8
FIGURE 1. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (FULL POWER MODE)
GAIN (dB)
12
4
1M
RF = 500Ω
14
6
2
100K
RF = 243Ω
16
RF = 500Ω
GAIN (dB)
GAIN (dB)
18
RF = 243Ω
16
8
100K
RF = 1kΩ
1M
10M
FREQUENCY (Hz)
100M
500M
FIGURE 6. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF (1/2 POWER MODE)
EL8108
VS=±6V
14 A =2
V
12 RL=100Ω DIFF
RF=248Ω
10
GAIN (dB)
(Continued)
NORMALIZED GAIN (dB)
Typical Performance Curves
RF=500Ω
8
6
4
RF=1kΩ
2
RF=750Ω
0
-2
VS=±6V
8 A =2
V
6 RF=500Ω
4
2
RL=150Ω
0
-2
-4
RL=25Ω
-6
RL=50Ω
-8
100K
1M
10M
100M
500M
100K
1M
FREQUENCY (Hz)
FIGURE 7. DIFFERENTIAL FREQUENCY RESPONSE WITH
VARIOUS RF
EL8108IL
EL8108IS
-60
-65
-70
HD (dB)
HD (dB)
VS=±6V
AV=5
-55 R =50Ω DIFF
L
RF=750
EL8108IL
EL8108IS
3rd HD
-65
3rd HD
-70
-75
-75
-80
2nd HD
2nd HD
1
2
3
4
5
6
VOP-P (V)
7
8
-80
9
FIGURE 9. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 2MHz
1
2
3
4
5
6
VOP-P (V)
7
8
9
FIGURE 10. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 3MHz
-40
-40
VS=±6V
AV=5
-45
RL=50Ω DIFF
RF=750
-50
VS=±6V
AV=5
-45 RL=50Ω DIFF
RF=750
EL8108IL
EL8108IS
EL8108IL
EL8108IS
3rd HD
3rd HD
-55
HD (dB)
HD (dB)
500M
-50
VS=±6V
A =5
-55 V
RL=50Ω DIFF
RF=750
-60
-60
-50
-55
-65
2nd HD
-60
-70
-75
100M
FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS RLOAD
-50
-85
10M
FREQUENCY (Hz)
2nd HD
1
2
3
4
5
6
VOP-P (V)
7
8
9
FIGURE 11. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 5MHz
4
-65
1
2
3
4
5
6
VOP-P (V)
7
8
9
FIGURE 12. DISTORTION BETWEEN EL8108IL vs EL8108IS
AT 10MHz
EL8108
Typical Performance Curves
(Continued)
-70
-60
-80
-70
VS=±6V
AV=5
-65 R =750
F
VOPP=4V
HD (dB)
HD (dB)
VS=±6V
AV=5
-75 R =750
F
VOPP=4V
2nd HD
-85
3rd HD
-75
-90
-80
-95
-85
3rd HD
2nd HD
-100
50
60
70
80
90 100 110
RLOAD (Ω)
120
130
140
-90
50
150
FIGURE 13. 2nd AND 3rd HARMONIC DISTORTION vs RLOAD
@ 2MHz (EL8108IL)
-50
120
130
140
150
VS=±6V
AV=5
RF=750
VOPP=4V
3rd HD
-55
HD (dB)
HD (dB)
90 100 110
RLOAD (Ω)
-45
-65
3rd HD
-70
-75
-80
-60
-65
-70
2nd HD
-85
2nd HD
-75
60
70
80
90 100 110
RLOAD (Ω)
120
130
140
-80
50
150
FIGURE 15. 2nd AND 3rd HARMONIC DISTORTION vs RLOAD
@ 5MHz (EL8108IL)
70
80
90 100 110
RLOAD (Ω)
120
130
140
150
24
VS = ±6V, AV = 5
22 RL = 50Ω
20 RF = 750Ω
18
GAIN (dB)
16
CL = 33pF
14
12
10
10M
FREQUENCY (Hz)
12
CL = 12pF
6
100M
500M
FIGURE 17. FREQUENCY RESPONSE WITH VARIOUS CL
5
CL = 39pF
14
8
CL = 22pF
6
16
10
CL = 0pF
8
CL = 47pF
18
CL = 47pF
1M
60
FIGURE 16. 2nd AND 3rd HARMONIC DISTORTION vs RLOAD
@ 10MHz (EL8108IL)
VS = ±6V, AV = 5
22 R = 50Ω
L
20 RF = 750Ω
GAIN (dB)
80
-40
VS=±6V
-55 AV=5
RF=750
-60 VOPP=4V
0
100K
70
FIGURE 14. 2nd AND 3rd HARMONIC DISTORTION vs RLOAD
@ 3MHz (EL8108IL)
-50
-90
50
60
4
100K
CL = 0pF
1M
10M
FREQUENCY (Hz)
100M
FIGURE 18. FREQUENCY RESPONSE vs VARIOUS CL
(3/4 POWER MODE)
500M
EL8108
Typical Performance Curves
(Continued)
24
-10
GAIN (dB)
18
CHANNEL SEPARATION (dB)
VS = ±6V, AV = 5
22 RL = 50Ω
20 RF = 750Ω
CL = 47pF
16
CL = 37pF
14
12
CL = 12pF
10
8
CL = 0pF
-30
-50
A
-70
B
B
A
-90
6
4
100K
10M
FREQUENCY (Hz)
1M
100M
-110
10K
500M
FIGURE 19. FREQUENCY RESPONSE WITH VARIOUS CL
(1/2 POWER MODE)
100K
1M
FREQUENCY (Hz)
10M
FIGURE 20. CHANNEL SEPARATION vs FREQUENCY
10M
200
3M
-30
MAGNITUDE (Ω)
PSRR-
-50
150
300K
PSRR+
-70
-90
PHASE
100K
GAIN
100
50
30K
0
10K
-50
3K
-100
1K
-150
-200
-110
100K
1M
10M
FREQUENCY (Hz)
-110
100M 200M
10M
1000
100K
1M
FREQUENCY (Hz)
10M
100M
VS = ±6V, AV = 1
RF = 750Ω
100
EN
10
1
0.1
IN0.01
0.001
0.0001
10
10K
FIGURE 22. TRANSIMPEDANCE (ROL) vs FREQUENCY
OUTPUT IMPEDANCE (Ω)
VOLTAGE/CURRENT NOISE (nV/√Hz)(nA/√Hz)
FIGURE 21. PSRR vs FREQUENCY
1K
10
1
0.1
IN+
100
1K
10K
100K
FREQUENCY (Hz)
1M
10M
FIGURE 23. VOLTAGE AND CURRENT NOISE vs FREQUENCY
6
10K
100K
1M
FREQUENCY (Hz)
10M
100M
FIGURE 24. OUTPUT IMPEDANCE vs FREQUENCY
PHASE (°)
-10
PSRR (dB)
100M
EL8108
Typical Performance Curves
(Continued)
150
0.4
AV = 5, RF = 750Ω,
RLOAD = 100Ω DIFF
130
DIFFERENTIAL GAIN (%)
120
BW (MHz)
110
FULL POWER MODE
100
90
3/4 POWER MODE
80
70
1/2 POWER MODE
60
50
3.5
3
VS=±6V
0.35
4.5
4
5
0.3
1/2 POWER MODE
0.25
0.2
0.15
0.1
3/4 POWER MODE
FULL POWER MODE
0.05
5.5
0
6
1
2
±VS (V)
FIGURE 25. DIFFERENTIAL BANDWIDTH vs SUPPLY VOLTAGE
FIGURE 26. DIFFERENTIAL GAIN
VS=±6V
0.08
14
0.07
12
FULL POWER MODE
0.05
6
0.03
4
3/4 POWER MODE
0.02
2
0.01
0
1
2
3
3/4 POWER MODE
8
0.04
1/2 POWER MODE
FULL POWER MODE
10
IS (mA)
0.06
4
1/2 POWER MODE
+IS
-IS
1
3
2
FIGURE 27. DIFFERENTIAL PHASE
6
FIGURE 28. SUPPLY CURRENT vs SUPPLY VOLTAGE
1.8K
1
1.7K
0
IB+
SLEW RATE (V/µs)
INPUT BIAS CURRENT (µA)
5
4
±VS (V)
# OF 150Ω LOADS
-1
-2
IB-3
-4
-5
4
16
0.09
DIFFERENTIAL PHASE (%)
3
# OF 150Ω LOADS
1.6K
1.5K
1.4K
1.3K
0
25
50
75
100
125
150
TEMPERATURE (°C)
FIGURE 29. INPUT BIAS CURRENT vs TEMPERATURE
7
1.2K
-50
-25
0
25
50
75
100
125
TEMPERATURE (°C)
FIGURE 30. SLEW RATE vs TEMPERATURE
150
EL8108
(Continued)
5
3
4
2.5
TRANSIMPEDANCE (MΩ)
OFFSET VOLTAGE (mV)
Typical Performance Curves
3
2
1
0
-1
-50
2
1.5
1
0.5
-25
0
25
50
75
100
125
0
-50
150
-25
25
0
FIGURE 31. OFFSET VOLTAGE vs TEMPERATURE
100
125
150
16
RLOAD=100Ω
5.05 VS=±6V
SUPPLY CURRENT (mA)
15.5
5
4.95
4.9
4.85
4.8
15
14.5
14
13.5
13
12.5
-25
0
25
50
75
TEMPERATURE (°C)
100
125
12
-50
150
FIGURE 33. OUTPUT VOLTAGE vs TEMPERATURE
3
-25
25
50
75
TEMPERATURE (°C)
0
AV=5
RF=750Ω
RL=100Ω DIFF
1
0
-1
2.5
3
3.5
4
4.5
5
5.5
6
VS (±V)
FIGURE 35. DIFFERENTIAL PEAKING vs SUPPLY VOLTAGE
8
100
125
FIGURE 34. SUPPLY CURRENT vs TEMPERATURE
2
PEAKING (dB)
OUTPUT VOLTAGE (±V)
75
FIGURE 32. TRANSIMPEDANCE vs TEMPERATURE
5.1
4.75
-50
50
TEMPERATURE (°C)
TEMPERATURE (°C)
150
EL8108
Typical Performance Curves
(Continued)
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
3.5
1.4
3
1.2
POWER DISSIPATION (W)
POWER DISSIPATION (W)
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD
2.5
2
1.5
1.136W
S O8
1
110°
0.5
C /W
1
781mW
0.8
θJ
0.6
60
0.4
8
°C
/W
0.2
0
0
0
50
25
75 85 100
125
0
150
25
FIGURE 36. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
1.2
4.5
POWER DISSIPATION (W)
4
3.125W
3
QFN16
θJA=40°C/W
2.5
2
1.5
1
0.5
0
75 85 100
125
150
FIGURE 37. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD - LPP EXPOSED
DIEPAD SOLDERED TO PCB PER JESD51-5
3.5
50
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (W)
SO
A =1
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
833mW
QFN16
0.8
θJA=150°C/W
0.6
0.4
0.2
0
0
25
75 85
50
100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 38. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Applications Information
Product Description
The EL8108 is a dual current feedback operational amplifier
designed for video distribution solutions. It is a dual current
mode feedback amplifier with low distortion while drawing
moderately low supply current. It is built using Intersil’s
proprietary complimentary bipolar process and is offered in
industry standard pinouts. Due to the current feedback
architecture, the EL8108 closed-loop 3dB bandwidth is
dependent on the value of the feedback resistor. First the
desired bandwidth is selected by choosing the feedback
resistor, RF, and then the gain is set by picking the gain
resistor, RG. The curves at the beginning of the Typical
Performance Curves section show the effect of varying both
RF and RG. The 3dB bandwidth is somewhat dependent on
the power supply voltage.
9
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 39. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, good printed circuit
board layout is necessary for optimum performance. Ground
plane construction is highly recommended. Lead lengths
should be as short as possible, below ¼”. The power supply
pins must be well bypassed to reduce the risk of oscillation.
A 4.7µF tantalum capacitor in parallel with a 0.1µF ceramic
capacitor is adequate for each supply pin.
For good AC performance, parasitic capacitances should be
kept to a minimum, especially at the inverting input. This
implies keeping the ground plane away from this pin. Carbon
resistors are acceptable, while use of wire-wound resistors
should not be used because of their parasitic inductance.
Similarly, capacitors should be low inductance for best
performance.
EL8108
Capacitance at the Inverting Input
Supply Voltage Range
Due to the topology of the current feedback amplifier, stray
capacitance at the inverting input will affect the AC and
transient performance of the EL8108 when operating in the
non-inverting configuration.
The EL8108 has been designed to operate with supply
voltages from ±2.5V to ±6V. Optimum bandwidth, slew rate,
and video characteristics are obtained at higher supply
voltages. However, at ±2.5V supplies, the 3dB bandwidth at
AV = +5 is a respectable 200MHz.
In the inverting gain mode, added capacitance at the
inverting input has little effect since this point is at a virtual
ground and stray capacitance is therefore not “seen” by the
amplifier.
Single Supply Operation
If a single supply is desired, values from +5V to +12V can be
used as long as the input common mode range is not
exceeded. When using a single supply, be sure to either 1)
DC bias the inputs at an appropriate common mode voltage
and AC couple the signal, or 2) ensure the driving signal is
within the common mode range of the EL8108.
Feedback Resistor Values
The EL8108 has been designed and specified with
RF = 500Ω for AV = +2. This value of feedback resistor yields
extremely flat frequency response with little to no peaking
out to 200MHz. As is the case with all current feedback
amplifiers, wider bandwidth, at the expense of slight
peaking, can be obtained by reducing the value of the
feedback resistor. Inversely, larger values of feedback
resistor will cause rolloff to occur at a lower frequency. See
the curves in the Typical Performance Curves section which
show 3dB bandwidth and peaking vs. frequency for various
feedback resistors and various supply voltages.
Driving Cables and Capacitive Loads
The EL8108 was designed with driving multiple coaxial
cables in mind. With 450mA of output drive and low output
impedance, driving six, 75Ω double terminated coaxial
cables to ±11V with one EL8108 is practical.
When used as a cable driver, double termination is always
recommended for reflection-free performance. For those
applications, the back termination series resistor will
decouple the EL8108 from the capacitive cable and allow
extensive capacitive drive.
Bandwidth vs Temperature
Whereas many amplifier's supply current and consequently
3dB bandwidth drop off at high temperature, the EL8108 was
designed to have little supply current variations with
temperature. An immediate benefit from this is that the 3dB
bandwidth does not drop off drastically with temperature.
Other applications may have high capacitive loads without
termination resistors. In these applications, an additional
small value (5Ω-50Ω) resistor in series with the output will
+5V
EL8108
-5V
750
750
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EL8108
SO Package Outline Drawing
11
EL8108
QFN Package Outline Drawing
NOTE: The package drawing shown here may not be the latest version. To check the latest revision, please refer to the Intersil
website at <http://www.intersil.com/design/packages/index.asp>
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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