Cypress CY7C291A-25WC 2k x 8 reprogrammable prom Datasheet

92A
CY7C291A
2K x 8 Reprogrammable PROM
Features
Functional Description
• Windowed for reprogrammability
• CMOS for optimum speed/power
• High speed
— 20 ns (Commercial)
•
•
•
•
•
•
A read is accomplished by placing an active LOW signal on
CS1, and active HIGH signals on CS2 and CS3. The contents
of the memory location addressed by the address line
(A0−A10) will become available on the output lines (O0−O7).
Logic Block Diagram
Pin Configurations
A0
DIP
Top View
O7
A1
A2
A3
ROW
ADDRESS
PROGRAMMABLE
ARRAY
MULTIPLEXER
O6
A7
A6
A4
A5
A4
A3
O5
A5
A6
ADDRESS
DECODER
O4
A2
A1
A0
A7
O3
A8
A9
A10
O0
COLUMN
ADDRESS
O1
O2
POWER
DOWN
7C293A
O2
GND
LCC/PLCC (Opaque Only)
Top View
VCC
A8
A9
A10
1
24
2
23
3 7C291A 22
4
21
5
20
6
19
18
7
8
17
9
16
10
15
11
14
12
13
CS1
CS2
CS3
O7
O6
O5
O4
O3
A5
A6
A7
NC
VCC
A8
A9
•
The CY7C291A is a plug-in replacement for bipolar devices
and offers the advantage of lower power, reprogrammability,
superior performance and programming yield. The EPROM
cell requires only 12.5V for the supervoltage and low current
requirements allow for gang programming. The EPROM cells
allow for each memory location to be tested 100%, as each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the
product will meet DC and AC specification limits.
A4
A3
A2
A1
A0
NC
O0
4 3 2 1 28 27 26
25
5
24
6
7C291A
23
7
22
8
21
9
20
10
19
11
12 1314151617 18
A10
CS1
CS2
CS3
NC
O7
O6
O1
O2
GND
NC
O3
O4
O5
•
— 35 ns (Military)
Low power
— 660 mW (Commercial and Military)
Low standby power
— 220 mW (Commercial and Military)
EPROM technology 100% programmable
Slim 300-mil or standard 600-mil packaging available
5V ±10% VCC, commercial and military
TTL-compatible I/O
Direct replacement for bipolar PROMs
Capable of withstanding >2001V static discharge
The CY7C291A is a high-performance 2K-word by 8-bit
CMOS PROM. It is packaged in a 300-mil ceramic package
which may be equipped with an erasure window; when
exposed to UV light the PROM is erased and can then be
reprogrammed. The memory cells utilize proven EPROM
floating-gate
technology
and
byte-wide
intelligent
programming algorithms.
O1
Window available
O0
CS1
CS2
CS3
Cypress Semiconductor Corporation
Document #: 38-04011 Rev. *A
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised October 8, 2002
CY7C291A
Selection Guide
Maximum Access Time
Maximum
Operating
Current
Standard
L
Commercial
7C291A-20
7C291A-25
7C291A-35
7C291AL-35
7C291A-50
Unit
20
25
35
50
ns
120
90
90
90
mA
Military
90
mA
Commercial
60
mA
Maximum Ratings
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-Up Current..................................................... >200 mA
Storage Temperature ......................................−65°C to+150°C
Operating Range
Ambient Temperature with
Power Applied................................................... −55°C to+125°C
Supply Voltage to Ground Potential ..................−0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State ......................................................−0.5V to+7.0V
DC Input Voltage .................................................−3.0V to +7.0V
DC Program Voltage .....................................................13.0V
Range
Ambient
Temperature
VCC
Commercial
0°C to + 70°C
5V ±10%
−55°C to + 125°C
5V ±10%
Military[1]
Notes:
1. TA is the “instant on” case temperature.
UV Exposure.................................................7258 Wsec/cm2
Document #: 38-04011 Rev. *A
Page 2 of 12
CY7C291A
Electrical Characteristics Over the Operating Range[2,3]
7C291A-20
Parameter
Description
Test Conditions
Min.
Max.
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 16.0 mA
VIH
Input HIGH Voltage
Guaranteed Input Logical
HIGH Voltage for All Inputs
VIL
Input LOW Voltage
Guaranteed Input Logical
LOW Voltage for All Inputs
IIX
Input Load Current
GND < VIN < VCC
VCD
Input Diode Clamp Voltage
IOZ
Output Leakage Current
GND < VOUT < VCC,
Output Disabled
−10
+10
IOS
Output Short Circuit
Current[4]
VCC = Max., VOUT = GND
−20
−90
ICC
VCC Operating Supply
Current
VCC = Max.,
IOUT = 0 mA
Com’l
ISB
Standby Supply Current
(7C293A Only)
VCC = Max.,
CS1 = VIH
Com’l
VPP
Programming Supply Voltage
IPP
Programming Supply Current
VIHP
Input HIGH Programming
Voltage
VILP
Input LOW Programming
Voltage
2.4
7C291A-25
Min.
2.4
0.4
2.0
Unit
V
0.4
V
VCC
V
0.8
V
+10
µA
−10
+10
µA
−20
−90
mA
120
90
mA
40
30
mA
13
V
50
mA
VCC
2.0
0.8
−10
Max.
+10
−10
Note 3
12
13
12
50
3.0
3.0
0.4
V
0.4
V
Notes:
2. See the last page of this specification for Group A subgroup testing information.
3. See the “Introduction to CMOS PROMs” section of the Cypress Data Book for general information on testing.
4. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
Document #: 38-04011 Rev. *A
Page 3 of 12
CY7C291A
Electrical Characteristics Over the Operating Range[2,3] (continued)
7C291A-35
7C291A-50
7C291AL-35
Parameter
Description
Test Conditions
Min.
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 16.0 mA
VIH
Input HIGH Voltage
Guaranteed Input Logical
HIGH Voltage for All Inputs
VIL
Input LOW Voltage
Guaranteed Input Logical
LOW Voltage for All Inputs
IIX
Input Load Current
GND < VIN < VCC
VCD
Input Diode Clamp Voltage
IOZ
Output Leakage Current
GND < VOUT < VCC,
Output Disabled
−10
IOS
Output Short Circuit Current[4]
VCC = Max., VOUT = GND
−20
ICC
VCC Operating Supply Current
VCC = Max.,
VIN = 2.0V
IOUT = 0 mA
Commercial
VCC = Max.,
CS1 = VIH
Commercial
ISB
Standby Supply Current
(7C293A Only)
VPP
Programming Supply Voltage
IPP
Programming Supply Current
VIHP
Input HIGH Programming Voltage
VILP
Input LOW Programming Voltage
Max.
Min.
2.4
Unit
2.4
0.4
V
0.4
2.0
V
2.0
0.8
−10
Max.
V
0.8
V
−10
+10
µA
+10
−10
+10
µA
−90
−20
−90
mA
90
mA
+10
Note 3
60
Military
90
30
30
Military
mA
40
12
13
12
50
3.0
13
V
50
mA
3.0
0.4
V
0.4
V
Capacitance[3]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Document #: 38-04011 Rev. *A
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
10
pF
10
pF
Page 4 of 12
CY7C291A
AC Test Loads and Waveforms[3]
R1250 Ω
5V
R1250 Ω
5V
OUTPUT
OUTPUT
R2
167Ω
30pF
90%
10%
90%
10%
GND
< 5 ns
INCLUDING
JIG AND
SCOPE
(a) Normal Load
Equivalent to:
R2
167Ω
5 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
3.0V
< 5 ns
(b) High Z Load
THÉVENIN EQUIVALENT
100Ω
OUTPUT
2.0V
tPU
tPD
VCC
SUPPLY
CURRENT
50%
50%
A0 − A10
ADDRESS
CS2 − CS3
CS1
tAA
tHZCS
tACS
O0 – O7
Switching Characteristics Over the Operating Range[2, 3]
Parameter
Description
7C291A-20
7C291A-25
7C291A-35
7C291AL-35
Min.
Min.
Min.
Max.
Max.
Max.
7C291A-50
Min.
Max.
Unit
tAA
Address to Output Valid
20
25
35
50
ns
tHZCS1
Chip Select Inactive to High Z
15
15
20
20
ns
tACS1
Chip Select Active to Output Valid
15
15
20
20
ns
tHZCS2
Chip Select Inactive to High Z
22
27
35
45
ns
tACS2
Chip Select Active to Output Valid
22
27
35
45
ns
tPU
Chip Select Active to Power-Up
tPD
Chip Select Inactive to Power-Down
Document #: 38-04011 Rev. *A
0
0
22
0
27
0
35
ns
45
ns
Page 5 of 12
CY7C291A
Erasure Characteristics
Wavelengths of light less than 4000 Angstroms begin to erase
these PROMs. For this reason, an opaque label should be
placed over the window if the PROM is exposed to sunlight or
fluorescent lighting for extended periods of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV
intensity x exposure time) of 25 Wsec/cm2. For an ultraviolet
lamp with a 12 mW/cm2 power rating, the exposure time would
be approximately 35 minutes.
These PROMs need to be within 1 inch of the lamp during
erasure. Permanent damage may result if the PROM is
exposed to high-intensity UV light for an extended period of
time. 7258 Wsec/cm2 is the recommended maximum dosage.
Programming Information
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software
packages, please see the PROM Programming Information
located at the end of this section. Programming algorithms can
be obtained from any Cypress representative.
Table 1. Mode Selection
Pin Function[5]
Read or Output Disable
A10−A0
CS3
CS2
CS1
O7−O0
Other
A10−A0
PGM
VFY
VPP
D7−D0
A10−A0
VIH
VIH
VIL
O7−O0
A10−A0
X
X
VIH
High Z
Output Disable
A10−A0
X
VIL
X
High Z
Output Disable
A10−A0
VIL
X
X
High Z
Program
A10−A0
VILP
VIHP
VPP
D7−D0
Program Verify
A10−A0
VIHP
VILP
VPP
O7−O0
Program Inhibit
A10−A0
VIHP
VIHP
VPP
High Z
Intelligent Program
A10−A0
VILP
VIHP
VPP
D7−D0
Blank Check Zeros
A10−A0
VIHP
VILP
VPP
Zeros
Mode
Read
Output Disable
[6]
Notes:
5. X = “don’t care” but not to exceed VCC +5%.
6. The power-down mode for the CY7C293A is activated by deselecting CS1.
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
24
23
2
22
3
7C291A 21
4
20
5
19
6
7
8
9
10
11
12
VCC
A8
A9
A10
VPP
VFY
18
17
16
PGM
D7
D6
15
D5
14
13
D4
D3
A4
A3
A2
A1
A0
NC
D0
5
6
7
8
9
10
11
4 3 2 1 28 27 26
25
24
7C291A
23
22
21
20
19
121314151617 18
A10
VPP
VFY
PGM
NC
D7
D6
D1
D2
GND
NC
D3
D4
D5
A7
A6
LCC/PLCC (Opaque Only)
Top View
A5
A6
A7
NC
VCC
A8
A9
DIP
Top View
Figure 1. Programming Pinouts
Document #: 38-04011 Rev. *A
Page 6 of 12
CY7C291A
Typical DC and AC Characteristics
1.2
1.4
1.2
1.0
TA =25°C
f = fMAX
0.8
0.6
4.0
4.5
5.0
5.5
NORMALIZED ACCESS TIME
1.2
NORMALIZED I CC
NORMALIZED I
CC
1.6
1.1
1.0
0.9
0.8
−55
6.0
25
1.6
1.4
1.2
1.0
0.8
50
25.0
40
30
20
10
0
5.0
0
1.0
2.0
6.0
15.0
10.0
0.0
4.0
3.0
5.5
20.0
VCC =4.5V
TA =25°C
5.0
0
200
OUTPUT VOLTAGE (V)
400
600
800 1000
CAPACITANCE (pF)
I CC vs. CYCLE PERIOD
175
1.02
150
1.00
NORMALIZED I CC
OUTPUT SINK CURRENT (mA)
4.5
TYPICAL ACCESS TIME CHANGE
vs. OUTPUT LOADING
30.0
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
125
100
75
VCC =5.0V
TA =25°C
25
0
0.0
TA =25°C
0.4
4.0
60
AMBIENT TEMPERATURE (°C)
50
0.6
OUTPUT SOURCE CURRENT
vs. VOLTAGE
125
25
0.8
SUPPLY VOLTAGE (V)
DELTA t AA (ns)
OUTPUT SOURCE CURRENT (mA)
NORMALIZED ACCESS TIME
vs. TEMPERATURE
0.6
−55
125
1.0
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
NORMALIZED ACCESS TIME
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
VCC =5.5V
TA =25°C
0.98
0.96
0.94
0.92
0.90
1.0
2.0
3.0
OUTPUT VOLTAGE (V)
Document #: 38-04011 Rev. *A
4.0
0.88
0
25
50
75
100
CYCLE PERIOD (ns)
Page 7 of 12
CY7C291A
Ordering Information
Speed
(ns)
ICC
(mA)
20
120
25
35
90
60
90
120
50
90
Ordering Code
Package
Name
Package Type
Operating
Range
CY7C291A-20JC
J64
28-Lead Plastic Leaded Chip Carrier
CY7C291A-20PC
P13
24-Lead (300-Mil) Molded DIP
CY7C291A-25JC
J64
28-Lead Plastic Leaded Chip Carrier
CY7C291A-25PC
P13
24-Lead (300-Mil) Molded DIP
CY7C291A-25SC
S13
24-Lead Molded SOIC
CY7C291A-25WC
W14
24-Lead (300-Mil) Windowed CerDIP
CY7C291AL-35JC
J64
28-Lead Plastic Leaded Chip Carrier
CY7C291AL-35PC
P13
24-Lead (300-Mil) Molded DIP
CY7C291AL-35WC
W14
24-Lead (300-Mil) Windowed CerDIP
CY7C291A-35JC
J64
28-Lead Plastic Leaded Chip Carrier
CY7C291A-35PC
P13
24-Lead (300-Mil) Molded DIP
CY7C291A-35WC
W14
24-Lead (300-Mil) Windowed CerDIP
CY7C291A-35DMB
D14
24-Lead (300-Mil) CerDIP
CY7C291A-35QMB
Q64
28-Pin Windowed Leadless Chip Carrier
CY7C291A-50PC
P13
24-Lead (300-Mil) Molded DIP
Commercial
CY7C291A-50WMB
W14
24-Lead (300-Mil) Windowed CerDIP
Military
Document #: 38-04011 Rev. *A
Commercial
Commercial
Commercial
Commercial
Military
Page 8 of 12
CY7C291A
MILITARY SPECIFICATIONS
Group A Subgroup Testing
DC Characteristics
Switching Characteristics
Parameter
Subgroups
Parameter
Subgroups
VOH
1, 2, 3
tAA
7, 8, 9, 10, 11
VOL
1, 2, 3
tACS1
7, 8, 9, 10, 11
VIH
1, 2, 3
VIL
1, 2, 3
IIX
1, 2, 3
IOZ
1, 2, 3
ICC
1, 2, 3
5962-87650
01LX
CY7C291-50WMB
ISB
1, 2, 3
5962-87650
03LX
CY7C291-35WMB
5962-88734
023X
CY7C291A-35LMB
5962-88734
033X
CY7C291A-35LMB
5962-88734
04LX
CY7C291A-25DMB
5962-88734
043X
CY7C291A-25LMB
SMD Cross Reference
SMD
Number
Suffix
Cypress
Number
Package Diagrams
24-Lead (300-Mil) CerDIP D14
MIL-STD-1835 D- 9 Config.A
51-80031-**
Document #: 38-04011 Rev. *A
Page 9 of 12
CY7C291A
Package Diagrams (continued)
24-Lead (300-Mil) Molded DIP P13/P13A
51-85013-*A
28-Pin Windowed Leadless Chip Carrier Q64
MIL–STD–1835 C–4
51-80102-**
Document #: 38-04011 Rev. *A
Page 10 of 12
CY7C291A
Package Diagrams (continued)
24-Lead (300-Mil) Molded SOIC S13
51-85025-*A
24-Lead (300-Mil) Windowed CerDIP W14
MIL-STD-1835 D-9 Config. A
51-80086-**
All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-04011 Rev. *A
Page 11 of 12
© Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C291A
Document History Page
Document Title: CY7C291A 2K x 8 Reprogrammable PROM
Document Number: 38-04011
ECN NO.
Issue
Date
Orig. of
Change
**
114138
03/18/02
DSG
Change from Spec number: 38-00075 to 38-04011
*A
118905
10/11/02
GBI
Update ordering information
REV.
Document #: 38-04011 Rev. *A
Description of Change
Page 12 of 12
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