Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 U ULTRA- LOW ON O RES SISTANC CE, 6-A DUAL L LOAD SWITCH S WITH CON NTROLL LED TU URN-ON FEATUR RES DES SCRIPTIO ON ▓ Integrated dual chann nel load switcch The APE8910 A is a small, ultra-low RON dual load ▓ Input Volttage Range: 0.8V to 5.5V V switch h with conttrolled turn on. It con ntains two ▓ Ultra-low ON-Resista ance, RON = 20mΩ 2 per N-cha annel MOSFETs that can n operate ove er an input channel voltag ge range of 0.8V 0 to 5.5V and supportt maximum ▓ 6A Maxim mum Continu uous Currentt per channell contin nuous curren nt up to 6A e each. Each lo oad switch ▓ Low Thre eshold Contro ol Input is co ontrolled by an on/off input (ON), which is ▓ Adjustablle Rise Time e capab ble of interrfacing dire ectly with lo ow-voltage ▓ Quick Ou utput Discharrge Transisto or contro ol signals. ▓ RoHS Co ompliant and Halogen Fre ee Product Additional feature es include a 250Ω on-chip load resisttor for outpu ut quick disccharge when n switch is APPLICATIONS ▓ Telecom Systems ▓ Industriall Systems ▓ Set-Top-B Box ▓ Consume er Electronicss ▓ Notebookks / Netbooks turned d off, in orde er to avoid inrush curren nt, the rise time is i adjustable e by an exte ernal ceramic c capacitor on the e CTx pin. The APE8910 A is available in an ultra-sm mall, space .saving 3mmx2mm m 14-pin DFN N package with w thermal pad. TYPICA AL APPLICATION +5V O ON1 VIN1 VBIAS S VOUT1 V VIN1 CIN1 1u uF V VIN2 VIN2 CIN2 1u uF COUT1 0. 1uF APE89 910 O ON2 C T1 Data and speecifications suubject to changge without nottice VOUT2 CT1 CT T2 VOUT1 GND VOUT2 COUT2 0. 1uF CT2 1 20141031V22 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 ORDERING / PA ACKAGE INFORM MATION T View Top DF FN3x2-14L APE8910 0X Packag ge Type GN3B: DFN 3x2-14 4L VIN1 1 14 VOUT1 VIN1 2 13 VOUT1 ON1 3 VBIAS V 4 ON2 5 VIN2 6 VIN2 7 Exposed E Pad 12 CT1 11 GND 10 CT2 GND 9 VOUT2 8 VOUT2 ABSOLU UTE MAX XIMUM RATINGS R S (at TA=25°C C) VIN1, VIN2 2 -0.3V V to 6V VOUT1, VO OUT2 VIN+ +0.3V VON1, VON N2 -0.3V V to 6V VBIAS -0.3+6V IMAX Storage Temperature Range R (TST) . 6A -65 to t +150°C Junction Te emperature (TJ) 150°°C Lead Temp perature (Soldering, 10se ec.) 260°°C Thermal Re esistance from Junction to t Ambient (R RθJA) DF FN-14L (3mm mX2mm) 65°C C/W RECOM MMENDED D OPERA ATING CONDITIO C ONS VIN1,2 0.8V V to 5.5V VBIAS 2.5V V to 5.5V (VB BIAS ≧ VIN N) VON1,2 0V to 5.5V VOUT1,2 VIN1 1,2 CIN1,2 ≧0.1uF Junction Te emperature (TJ) 125°°C Operating Temperature T e Range -40°C to 85°C 2 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 ELECTR RICAL SP PECIFICA ATIONS (VIN1, 2=0.8 to 5.5V, VB BIAS=5V, TA =25°C, unle ess otherwise e specified) ARAMETER PA YM SY Quiescent Current C IBIAS Shutdown Current C ISD S TEST CON NDITION VIN2=VON1= =VON2=5V VIN1=V IOUT1= =IOUT2=0A MIN TYP MA AX UNIT 80 120 uA 1 uA 28 2 mΩ 35 3 mΩ 28 2 mΩ 35 3 mΩ 28 2 mΩ 35 3 mΩ 28 2 mΩ 35 3 mΩ 28 2 mΩ 35 3 mΩ 28 2 mΩ 35 3 mΩ 350 Ω 1 uA D, VON1=VON2=GND VOUT1=VOUT2=0 VINx=5V, VBIAS=5V V, IOUTx= =-200mA, TA=25 = oC 20 VINx=5V, VBIAS=5V V, IOUTx= =-200mA, -40 0oC < TA < 85 5oC VINx=3.3V, VBIAS= =5V, IOUTx= =-200mA, TA=25 = oC 20 VINx=3.3V, VBIAS= =5V, IOUTx= =-200mA, -40 0oC < TA < 85 5oC VINx=1.8V, VBIAS= =5V, IOUTx= =-200mA, TA=25 = oC 20 VINx=1.8V, VBIAS= =5V, . ON Resistance (each sw witch) RON IOUTx= =-200mA, -40 0oC < TA < 85 5oC VINx=1.5V, VBIAS= =5V, IOUTx= =-200mA, TA=25 = oC 20 VINx=1.5V, VBIAS= =5V, IOUTx= =-200mA, -40 0oC < TA < 85 5oC VINx=1.2V, VBIAS= =5V, IOUTx= =-200mA, TA=25 = oC 20 VINx=1.2V, VBIAS= =5V, IOUTx= =-200mA, -40 0oC < TA < 85 5oC VINx=0.8V, VBIAS= =5V, IOUTx= =-200mA, TA=25 = oC 20 VINx=0.8V, VBIAS= =5V, IOUTx= =-200mA, -40 0oC < TA < 85 5oC Output Pull Down Resisstance ROPD VBIAS= =5V, VONx=0 0V O 250 ONx Input Leakage L Currrent ION O VONx=5 5V or GND ONx Logic High H VIH VBIAS= = 2.5V to 5.5V V 1.2 5.5 5 V ONx Logic Low L VIL VBIAS= = 2.5V to 5.5V V 0 0.4 0 V 3 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 PIN DES SCRIPTIO ONS PIN No. PIN SYMBOL 1, 2 V VIN1 C Channel 1 in nput, bypass this input with a ceramicc capacitor to o ground. 3 O ON1 C Channel 1 en nable contro ol input, active e high. Do no ot leave floatting. 4 VB BIAS 5 O ON2 C Channel 2 en nable contro ol input, active e high. Do no ot leave floatting. 6,7 V VIN2 C Channel 2 in nput, bypass this input with a ceramicc capacitor to o ground. 8,9 VO OUT2 10 C CT2 A capacitor to t ground sett the rise time of VOUT2. 11 G GND G Ground. 12 C CT1 A capacitor to t ground sett the rise time of VOUT1. 13,14 VO OUT1 PIN DESC CRIPTION 5 bias volta 5V age. C Channel 2 ou utput. C Channel 1 ou utput. BLOCK DIAGRA AM VIN1 . VBIAS VOUT1 Oscillator Output 1 D Discharge Charge Pump Control Logic VIN2 ON1 VOUT2 ON2 GND Output 2 D Discharge CT T1 CT2 4 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 TYPICA AL PERFO ORMANC CE CHAR RACTERISTICS VBIAS=5V, VIN1=VIN2,, ON1=ON2, IOUTX=0A, CTx=1nF, C CINXX=1µF, COUTX=0.1µF, ch1:ONx, ch h2:VOUT1, ch3: c VOUT2 Fig.1 1 Turn-on Response, R V VINx=0.8V Fig.2 Tu urn-on Respo onse, VINx=1.05V . Fig.3 3 Turn-on Response, R V VINx=1.8V Fig.4 Turn-on T Resp ponse, VINx= =2.5V Fig.5 5 Turn-on Response, R V VINx=3.3V Fig.6 Turn-on T Resp ponse, VINx= =5.0V 5 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 TYPICA AL PERFO ORMANC CE CHAR RACTERISTICS (C Continued d) VBIAS=5V, VIN1=VIN2,, ON1=ON2, IOUTX=0A, CTx=1nF, C CINXX=1µF, COUTX=0.1µF, ch1:ONx, ch h2:VOUT1, ch3: c VOUT2 Fig.7 Turn-off Response, R V VIN=0.8V Fig.8 Turn-off T Resp ponse, VIN=1 1.05V . 9 Turn-off Response, R V VIN=1.8V Fig.9 Fig.10 Turn-off Ressponse, VIN= =2.5V Fig.1 11 Turn-off Response, VIN=3.3V V =5.0V Fig.12 Turn-off Ressponse, VIN= 6 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 290 2000 260 1800 CT=1nF CT=0.47nF 1600 230 VOUT Rise Time (us) Turn-on Delay Time (us) TYPICA AL PERFO ORMANC CE CHAR RACTERISTICS (C Continued d) CT=1nF CT=0.47nF 200 CT=0.22nF 170 140 110 CT=0.22nF 1400 1200 1000 800 600 400 80 200 VB BIAB=5V, Cout= =0.1uF, Io=0A 50 0.8 1.4 2.0 2.6 3.2 3 3.8 4.4 VBIAB= =5V, Cout=0.1uF F, Io=0A 0 5.0 0.8 1.4 2.0 2.6 VIN (V) Fig.13 tD-ON vs. VIN N 4.4 5.0 50 CT=10nF 45 45 CT=1nF 40 CT=0nF 35 30 25 . 20 15 VOUT Fall Time (us) 40 Turn-off Time (us) 3.8 Fig.14 tR vs. VIN 50 10 CT T=10nF 35 CT T=1nF 30 CT T=0nF 25 20 15 10 5 5 VB BIAB=5V, Cout= =0.1uF, Io=0A 0 0.8 1.4 2.0 2.6 3.2 3 3.8 4.4 VBIAB= =5V, Cout=0.1uF, Io=0A 0 5.0 0.8 4 1.4 2.0 2.6 VIN (V) 3.2 3.8 4.4 5.0 V (V) VIN N Fig.15 tOFF vs. VIN Fig.16 tF vs. VIN 1.0 30 0.9 28 0.8 26 0.7 24 VON (V) RON (mΩ) 3.2 V (V) VIN 22 20 0.6 0.5 0.4 0.3 18 0.2 VBIAS=VIN N=VON=5V 16 VBIAS=VIN N=VON=3.3V 14 -40 -20 0 20 0 40 60 80 100 120 0 TJ (°C) ature Fig.17 RONN vs. Tempera VON-H 0.1 VON-L 0.0 -40 -20 0 0 20 4 40 60 80 100 120 TJ (°C) Fig.18 ON O Threshold vs. Temperature 7 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 80 16 70 14 60 12 50 10 IIN (uA) IBIAS (uA) TYPICA AL PERFO ORMANC CE CHAR RACTERISTICS (C Continued d) 40 30 8 6 20 4 VBIAS=VIN=VON=5V 10 VBIAS=VIN=VO ON=5V 2 VBIAS=VIN=VON=3.3V 0 VBIAS=VIN=VO ON=3.3V 0 0 -20 -40 0 2 20 40 60 80 100 120 0 0 -40 -20 TJ (°C) 0 20 4 40 60 80 100 120 TJ (°C) Fig.19 Quiescent Currrent (VBIAS) vs. Tempera ature Fig g.20 Quiesscent Currentt (VIN) vs. Te emperature . 8 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 APPLICATION IN NFORMA ATION On/Off Con ntrol The load sw witch is conttrolled by the e ON pin. Th he ONx pin is i active high h and has a low thresho old making itt capable of interfacing with w low volta age signals. The ONx pin n can be use ed with standard 1.2V, 1.8V, 2.5V orr 3.3V GPIO logic thresho old. Do not le eave the ONxx pin float. The Figure 21 show the e VOUTx turn n-on/off wave eform. tD: VOUT Tu urn On Delayy Time ton: VOUT Turn T On Time tR: VOUT Rise Time tOFF: VOUT Turn Off Tim me tF: VOUT Fa all Time Fig.21 ON/OFF Waveform W . Output Rise Time Control The rise tim me of each VOUTx V is adjustable by an a external capacitor on the t CTx pin. The rise tim me shows on n below Table e 1 are typica al measured value. Pleasse refer it for determined rise time. CT (nF) R Rise Time, tR (µs),10%~90 0%, COUT=0.1µF,CIN=1uF F V VIN=0.8V V VIN=1.05V VIN=1.2V VIN=1.5V VIN=1.8V VIN=2.5V VIN=3.3V VIN=5V 0 27 31 34 38 40 48 59 75 0.22 72 93 107 131 158 220 284 418 0.47 126 159 178 233 280 400 520 776 1 250 327 378 485 584 780 1045 1657 2.2 509 725 827 1027 1235 1777 2391 3593 4.7 1012 1387 1699 1898 2269 3451 4670 7418 10 2008 2865 3425 4328 5203 7491 10142 15409 <Table 1> 9 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 APPLICATION IN NFORMA ATION (Continued)) Input Capa acitor An input cap pacitor is reccommended to be placed d between VINx and GND D to limit the vvoltage drop on the inputt supply durin ng high curre ent applicatio on. Output Cap pacitor Setting a CIN greater th han the COUTT is highly re ecommended d. Since the internal bod dy diode is in n the NMOS S switch, this prevents the e current flow ws through th he body diode e from VOUT Tx to VINx when the syste em supply iss removed. Layout Con nsiderations s The Figure 22 shows the reference layout for AP PE8910. Belo ow lists help start layout. 1. The currrent loop of two load swiitch should be b separated and symme etrized to eacch other. 2. Keep th he high curre ent paths (VIN N, VOUT and d GND; blue circle) wide and short to o obtain the best b effect. 3. The inp put and outpu ut capacitorss should be close c to the device d as po ossible to min nimize the pa arasitic trace e inductances. 4. Place th he thermal vias under the e exposed pa ad of the dev vice (green circle). c This h help for therm mal diffusion n away fro om the devicce. . Fig.22 APE E8910 Referrence Layoutt 100 Advanc A ced Pow wer E Electron nics Co orp. AP PE8910 MARKIN NG INFORMATION DFN 3x2-14 4L 89 910 YWW WSSS Part Numb ber Date Code (YWWSSS) Y : Year WW : Weekk SSS : Sequ uence . 111