Diode Semiconductor Korea Schottky Barrier diode BAT54/A/C/S FEATURES z Pb Extremely Fast switching speed. Lead-free z Low forward voltage. z Power dissipation Pd=200mW z Pb-Free package is available. BAT54 APPLICATIONS z BAT54A BAT54C BAT54S Fast switching speed diode SOT-23 ORDERING INFORMATION Type No. Marking Package Code KL1 KL2 KL3 KL4 SOT-23 SOT-23 SOT-23 SOT-23 BAT54 BAT54A BAT54C BAT54S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Reverse Voltage VRRM VRWM VR 30 V Forward Continuous Current IF 200 mA Repetitive Peak Forward Current IFRM 200 mA IFSM 600 mA Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθJA 500 ℃/W Operating and Storage temperature Tj ,TSTG -55-150 ℃ Forward surge current @t<1.0s www.diode.kr Diode Semiconductor Korea Schottky Barrier diode BAT54/A/C/S ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Symbol Min. Reverse Breakdown Voltage V(BR) 30 unless otherwise specified Typ. Max. Unit Conditions V IR=100μA VF1 0.24 V IF=0.1mA VF2 0.32 V IF=1mA VF3 0.40 V IF=10mA VF4 0.50 V IF=30mA VF5 1 V IF=100mA Reverse current IR 2 μA VR=25V Diode Capacitanc CD 10 pF VR=1V,f=1MHz Reverse Recovery Time trr 5 ns IF=IR=10mA Irr=0.1XIR,RL=100Ω Forward voltage TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Schottky Barrier diode BAT54/A/C/S PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping BAT54/A/C/S SOT-23 3000/Tape&Reel www.diode.kr