AP9577GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement -60V RDS(ON) 64mΩ ID ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS -17A S Description AP9577 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. D TO-220CFM(I) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -17 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -11 A 1 IDM Pulsed Drain Current -85 A PD@TC=25℃ Total Power Dissipation 31.3 W PD@TA=25℃ Total Power Dissipation 1.92 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 1 201203122 AP9577GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -60 - - V VGS=-10V, ID=-12A - - 64 mΩ VGS=-4.5V, ID=-8A - - 90 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-8A - 17 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-12A - 35 56 nC Qgs Gate-Source Charge VDS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 12 - nC td(on) Turn-on Delay Time VDS=-30V - 12 - ns tr Rise Time ID=-12A - 23 - ns td(off) Turn-off Delay Time RG=3.3Ω - 45 - ns tf Fall Time VGS=-10V - 60 - ns Ciss Input Capacitance VGS=0V - 1440 2300 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 8 16 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 75 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9577GI 40 50 -ID , Drain Current (A) 40 30 V G = - 4 .0 V 20 -10V -7.0V -6.0V -5.0V T C =150 o C -ID , Drain Current (A) -10V - 7 .0V - 6 .0V - 5.0 V T C = 25 o C 30 V G = -4.0V 20 10 10 0 0 0 2 4 6 0 8 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.4 I D = - 12 A V G = -10V I D = -8 A T C =25 ℃ 2.0 Normalized RDS(ON) RDS(ON) (mΩ ) 70 60 1.6 1.2 50 0.8 0.4 40 2 4 6 8 -50 10 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 2.0 12 10 Normalized -VGS(th) 1.6 -IS(A) 8 T j =150 o C 6 T j =25 o C 4 1.2 0.8 0.4 2 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9577GI f=1.0MHz 12 2400 V DS = - 48 V I D = - 12 A 2000 1600 8 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 1200 4 800 2 400 0 0 0 10 20 30 40 C oss C rss 1 50 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) Duty factor=0.5 100us -ID (A) 10 1ms 10ms 100ms 1s DC 1 T c =25 o C Single Pulse 0 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.1 1 10 100 1000 0.00001 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4