DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A PINNING FEATURES • High current (max. 1 A) PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification • Industrial applications. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN transistor in a TO-39 metal package. 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER MIN. TYP. MAX. UNIT BSW66A − − 100 V BSW67A − − 120 V BSW68A − − 150 V BSW66A − − 100 V BSW67A − − 120 V BSW68A − − 150 V collector-base voltage collector-emitter voltage CONDITIONS open emitter open base IC collector current (DC) − − 1 A Ptot total power dissipation Tcase ≤ 25 °C − − 5 W hFE DC current gain IC = 10 mA; VCE = 5 V 30 − − IC = 500 mA; VCE = 5 V 30 − − fT transition frequency IC = 100 mA; VCE = 20 V; f = 100 MHz − 130 − MHz toff turn-off time ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − 900 − ns 1997 May 05 2 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BSW66A − 100 V BSW67A − 120 V − 150 V BSW66A − 100 V BSW67A − 120 V − 150 V − 6 V − 1 A − 2 A − 200 mA Tamb ≤ 25 °C − 800 mW Tcase ≤ 25 °C BSW68A VCEO MIN. collector-emitter voltage open base BSW68A VEBO emitter-base voltage IC collector current (DC) open collector tp ≤ 20 ms ICM peak collector current IBM peak base current Ptot total power dissipation − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 May 05 CONDITIONS free air 3 VALUE UNIT 220 K/W 35 K/W Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER hFE VCEsat VBEsat MAX. UNIT IE = 0; VCB = 50 V − − 100 nA IE = 0; VCB = 50 V; Tj = 150 °C − − 50 µA IE = 0; VCB = 100 V − − 100 µA IE = 0; VCB = 60 V − − 100 nA IE = 0; VCB = 60 V; Tj = 150 °C − − 50 µA IE = 0; VCB = 120 V − − 100 µA IE = 0; VCB = 75 V − − 100 nA collector cut-off current BSW68A IEBO TYP. collector cut-off current BSW67A ICBO MIN. collector cut-off current BSW66A ICBO CONDITIONS emitter cut-off current DC current gain IE = 0; VCB = 75 V; Tj = 150 °C − − 50 µA IE = 0; VCB = 150 V − − 100 µA IC = 0; VEB = 3 V − − 100 nA IC = 0; VEB = 6 V − − 100 µA IC = 10 mA 30 − − IC = 100 mA 40 − − IC = 500 mA 30 − − IC = 1 A 10 − − − − 150 VCE = 5 V collector-emitter saturation voltage IC = 100 mA; IB = 10 mA base-emitter saturation voltage mV IC = 500 mA; IB = 50 mA − − 400 mV IC = 1 A; IB = 150 mA − − 1 V IC = 100 mA; IB = 10 mA − − 900 mV IC = 500 mA; IB = 50 mA − − 1.1 V IC = 1 A; IB = 150 mA − − 1.4 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 20 pF Ce emitter capacitance IC = ic = 0; VEB = 0; f = 1 MHz − − 300 pF fT transition frequency IC = 100 mA; VCE = 20 V; f = 100 MHz − 130 − MHz − 500 − ns − 900 − ns Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time 1997 May 05 ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA 4 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 May 05 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 5 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 05 6 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A NOTES 1997 May 05 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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