Renesas BB304C Built in biasing circuit mos fet ic vhf rf amplifier Datasheet

BB304C
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0826-0600
(Previous ADE-208-606D)
Rev.6.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
Notes:
1. Marking is “DW –”.
2. BB304C is individual type number of RENESAS BBFET.
Rev.6.00 Aug 10, 2005 page 1 of 9
1. Source
2. Gate1
3. Gate2
4. Drain
BB304C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Ratings
12
Unit
V
+10
–0
±10
25
100
150
–55 to +150
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
12
+10
±10
—
—
0.4
Typ
—
—
—
—
—
—
Max
—
—
—
+100
±100
1.0
Unit
V
V
V
nA
nA
V
Gate2 to source cutoff voltage
VG2S(off)
0.5
—
1.0
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Ciss
Coss
Crss
ID(op) 1
2.3
0.9
0.003
9
2.8
1.3
0.02
14
3.6
2.0
0.05
19
pF
pF
pF
mA
ID(op) 2
—
13
—
mA
VDS = 9 V, VG1 = 9 V, VG2S =6 V
RG = 470 kΩ
|yfs|1
22
27
34
mS
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 1 kHz
|yfs|2
—
27
—
mS
VDS = 9 V, VG1 = 9 V, VG2S =6 V
RG = 470 kΩ, f = 1 kHz
PG1
24
29
32
dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 200 MHz
PG2
—
29
—
dB
VDS = 9 V, VG1 = 9 V, VG2S =6 V
RG = 470 kΩ, f = 200 MHz
NF1
—
1.2
1.9
dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 200 MHz
NF2
—
1.2
—
dB
VDS = 9 V, VG1 = 9 V, VG2S =6 V
RG = 470 kΩ, f = 200 MHz
Forward transfer admittance
Power gain
Noise figure
Rev.6.00 Aug 10, 2005 page 2 of 9
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = +10 µA, VG1S = VDS = 0
VG1S = +9 V, VG2S = VDS = 0
VG2S = +9 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ, f = 1 MHz
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ
BB304C
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
200MHz Power Gain, Noise Figure Test Circuit
1000p
47k
VT
VG2
VT
1000p
1000p
47k
1000p
47k
BBFET
Output(50Ω)
1000p
L2
Input(50Ω)
L1
10p max
1000p
1000p
36p
1SV70
RG
RFC
470k
1SV70
1000p
VD = VG1
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Rev.6.00 Aug 10, 2005 page 3 of 9
Unit
Resistance (Ω)
Capacitance (F)
BB304C
Typical Output Characteristics
100
50
50
100
150
200
5
2
4
6
10
25
15
Ω
20
30 k Ω
390 k
Ω
470 k Ω
10
560 k Ω
68 0 k Ω
820 k Ω
1M Ω
5
Drain Current ID (mA)
270 k
VDS = 9 V
RG = 390 kΩ
6V
5V
15
4V
10
3V
2V
5
VG2S = 1 V
1.2
2.4
3.8
0
6.0
4.8
Gate2 to Source Voltage VG2S (V)
2
4
6
8
10
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
25
25
15
ID (mA)
VDS = 9 V
RG = 470 kΩ
6V
5V
4V
10
3V
2V
5
Drain Current
ID (mA)
8
Drain Current vs. Gate1 Voltage
RG = 1.5 MΩ
Drain Current
Ω
1M
Ω
= 1.5 M
Drain Current vs.
Gate2 to Source Voltage
3
20
VDS = 9 V
RG = 560 kΩ
15
6V
5V
4V
3V
10
2V
5
VG2S = 1 V
VG2S = 1 V
0
0
Drain to Source Voltage VDS (V)
20
20
Ω
k
0
82
Ambient Temperature Ta (°C)
VDS = VG1 = 9 V
0
0
33
10
RG
0
kΩ
0k
27
kΩ
0
47 Ω
0k
56 k Ω
0
68 k Ω
15
0
25
Drain Current ID (mA)
20
VG2S = 6 V
VG1 = VDS
39
150
Ω
25
200
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
2
4
6
8
Gate1 Voltage VG1 (V)
Rev.6.00 Aug 10, 2005 page 4 of 9
10
0
2
4
6
8
Gate1 Voltage VG1 (V)
10
BB304C
Forward Transfer Admittance
vs. Gate1 Voltage
30
6V
VDS = 9 V
RG = 390 kΩ
24 f = 1 kHz
5V
4V
3V
2V
18
12
6
VG2S = 1 V
0
2
4
6
8
10
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
30
4V
3V
18
12
6
VG2S = 1 V
0
2
4
6
8
10
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
40
30
VDS = 9 V
RG = 560 kΩ
f = 1 kHz
24
6V 5V 4V
35
Power Gain PG (dB)
Forward Transfer Admittance |yfs| (mS)
5V
2V
Gate1 Voltage VG1 (V)
3V
18
2V
12
6
30
25
20
15
VG2S = 1 V
0
2
4
6
10
0.1
10
8
4
0.5
1
2
5
10
40
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
f = 200 MHz
Power Gain PG (dB)
35
2
1
0
0.1
0.2
Power Gain vs. Drain Current
Noise Figure vs. Gate Resistance
3
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
f = 200 MHz
Gate Resistance RG (MΩ)
Gate1 Voltage VG1 (V)
Noise Figure NF (dB)
6V
VDS = 9 V
RG = 470 kΩ
24 f = 1 kHz
0.2
0.5
1
2
5
Gate Resistance RG (MΩ)
Rev.6.00 Aug 10, 2005 page 5 of 9
10
30
25
20
15
10
0
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = variable
f = 200 MHz
5
10
15
20
25
Drain Current ID (mA)
30
BB304C
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
30
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = variable
f = 200 MHz
3
25
Drain Current ID (mA)
Noise Figure NF (dB)
4
2
1
0
5
10
15
20
25
20
15
10
5
0
0.1
30
0.2
0.5
1
2
5
10
Gate Resistance RG (MΩ)
Drain Current ID (mA)
Input Capacitance vs.
Gate2 to Source Voltage
Gain Reduction vs.
Gate2 to Source Voltage
60
6
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = 470 kΩ
f = 200 MHz
50
40
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
30
20
10
0
1
2
3
4
5
6
Gate2 to Source Voltage VG2S (V)
Rev.6.00 Aug 10, 2005 page 6 of 9
7
5
4
3
2
VDS = 9 V
VG1 = 9 V
RG = 470 kΩ
f = 1 MHz
1
0
1
2
3
4
5
6
Gate2 to Source Voltage VG2S (V)
BB304C
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
90°
1.5
.6
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
−10
−5
−4
−.2
−3
−.4
–30°
–150°
−2
−.6
−.8
−1
–60°
–120°
−1.5
–90°
Test Condition : VDS = 9 V , VG1 = 9 V
VG2S = 6 V , RG = 470 kΩ
50 — 1000 MHz (50 MHz step)
Test Condition : VDS = 9 V , VG1 = 9 V
VG2S = 6 V , RG = 470 kΩ
50 — 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30°
−150°
−3
−.4
−120°
−60°
−90°
Test Condition : VDS = 9 V , VG1 = 9 V
VG2S = 6 V , RG = 470 kΩ
50 — 1000 MHz (50 MHz step)
Rev.6.00 Aug 10, 2005 page 7 of 9
−2
−.6
−.8
−1
−1.5
Test Condition : VDS = 9 V , VG1 = 9 V
VG2S = 6 V , RG = 470 kΩ
50 — 1000 MHz (50 MHz step)
BB304C
S Parameter
(VDS = VG1 = 9V, VG2S = 6V, RG = 470kΩ, Zo = 50Ω)
f(MHz)
S11
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
0.996
0.993
0.987
0.978
0.972
0.954
0.943
0.925
0.910
0.893
0.880
0.861
0.847
0.829
0.816
0.804
ANG.
–5.3
–10.9
–16.6
–21.9
–27.4
–33.2
–38.2
–43.2
–48.0
–52.5
–57.4
–62.1
–66.1
–69.9
–74.1
–78.2
MAG.
2.74
2.73
2.68
2.66
2.63
2.57
2.50
2.43
2.37
2.30
2.24
2.17
2.10
2.02
1.96
1.91
ANG.
174.0
168.0
162.3
156.3
150.4
144.3
138.7
133.3
128.0
122.6
117.5
112.7
108.1
103.6
99.1
94.8
MAG.
0.00096
0.00130
0.00203
0.00285
0.00335
0.00385
0.00455
0.00488
0.00526
0.00522
0.00498
0.00512
0.00497
0.00455
0.00418
0.00372
ANG.
98.6
84.4
83.6
72.3
69.7
68.3
63.2
55.4
59.8
56.1
53.2
49.1
53.4
53.6
51.6
55.7
MAG.
0.985
0.991
0.990
0.988
0.985
0.982
0.979
0.975
0.971
0.967
0.962
0.957
0.952
0.947
0.943
0.937
ANG.
–1.9
–4.5
–6.5
–9.4
–11.6
–14.0
–16.2
–18.4
–21.0
–23.0
–25.2
–27.3
–29.4
–31.6
–33.7
–35.8
850
900
950
1000
0.791
0.779
0.764
0.753
–82.4
–86.1
–89.5
–92.4
1.85
1.79
1.73
1.68
80.4
86.3
82.2
78.3
0.00329
0.00275
0.00233
0.00258
62.4
73.0
82.4
105.1
0.933
0.928
0.921
0.918
–38.0
–40.0
–42.1
–44.2
Rev.6.00 Aug 10, 2005 page 8 of 9
BB304C
Package Dimensions
JEITA Package Code
RENESAS Code
SC-82A
Package Name
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
MASS[Typ.]
0.006g
A
e2
e
Q
b1
c
B
B
E
HE
LP
Reference
Symbol
L
A
A
x M
L1
S
A
e2
A2
e
l1
b5
S
b
c
A
A1
y S
b2
A3
b
e1
b1
b3
c1
c1
c
A-A Section
l1
b4
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
l1
Q
Dimension in Millimeters
Min
0.8
0
0.8
0.25
0.35
0.1
1.8
1.15
1.8
0.3
0.1
0.2
Nom
0.9
0.25
0.32
0.42
0.3
0.4
0.13
0.11
2.0
1.25
0.65
0.6
2.1
Max
1.1
0.1
1.0
0.4
0.5
0.15
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.05
0.45
0.55
1.5
0.9
0.2
Ordering Information
Part Name
BB304CDW-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Aug 10, 2005 page 9 of 9
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0