Seme LAB BFY84 Silicon planar epitaxial npn transistor Datasheet

BFY84
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
6.10 (0.240)
6.60 (0.260)
7.75 (0.305)
8.51 (0.335)
12.7 (0.500)
Min.
1.02
(0.040)
Max.
0.41 (0.016)
0.53 (0.021)
DESCRIPTION
5.08
(0.200)
The BFY84 is a six terminal device containing
two isolated silicon planar epitaxial NPN
transistors in Jedec TO77 metal case.
2.54
(0.100)
4
2.54
(0.100)
3
5
The good thermal tracking over a wide current
and temperature range, offers the circuit
designer matched transistors with specified
performance for differential amplifiers.
0.74 (0.029)
1.14 (0.045)
6
2
1
45˚
0.71 (0.028)
0.86 (0.034)
TO77
Pin 1 – Collector 1
Pin 4 – Emitter 2
Pin 2 – Base 1
Pin 5 – Base 2
Pin 3 – Emitter 1
Pin 6 – Collector 2
ABSOLUTE MAXIMUM RATINGS
VCBO
Collector – Base Voltage (IE = 0)
30V
VCEO
Collector – Emitter Voltage (IB = 0)
12V
VEBO
Emitter – Base Voltage (IC = 0)
3V
IC
Collector Current
Ptot
Total Dissipation at
Tstg,Tj
Semelab plc.
200mA
Tamb £ 25°C (one side)
0.3W
Tamb £ 25°C (both sides)
0.38W
Tcase £ 25°C (one side)
0.6W
Tcase £ 25°C (both sides)
0.98W
Tcase £ 100°C (one side)
0.34W
Tcase £ 100°C (both sides)
0.56W
Storage and Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
–65 to +200°C
Prelim. 5/99
BFY84
THERMAL DATA
One side
Both Sides
Rthj-case
Thermal Resistance Junction-case
Max
292
178
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
583
460
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCB = 15V
IE = 0
10
nA
VCB = 15V
Tamb =150°C
1
mA
Collector Base Breakdown Voltage
IC = 1mA
IE = 0
30
V
VCEO(sus)*
Collector Emitter Sustaining Voltage
IC = 3mA
IB = 0
12
V
V(BR)EBO
Emitter Base Breakdown Voltage
IC = 0
IE = 10mA
3
V
VCE(sat)
Collector Emitter Saturation Voltage
IC = 10mA
IB = 1mA
0.4
V
VBE(sat)
Base Emitter Saturation Voltage
IC = 10mA
IB = 1mA
1
V
lVBE1-VBE2l
Input Offset Voltage
IC = 3mA
VCE = 1V
15
mV
lVBE1-VBE2l
Input Offset Voltage Temperature
IC = 3mA
VCE = 1V
25
mV/°C
ICBO
Collector Cut Off Current
V(BR)CBO
ÎT
Coefficient
hFE
DC Current Gain
IC = 3mA
VCE = 1V
hFE1/hFE2
Matched Pair Ratio
IC = 3mA
VCE = 1V
fT
Transistion Frequency
IC = 4mA
VCE = 10v
CEBO
Emitter Base Capacitance
CCBO
Collector Base Capacitance
NF
Noise Figure
f = 100MHz
IC = 0
VEB = 0.5V
f = 1MHz
IE = 0
VCB = -10V
f = 1MHz
IC =1mA
VCE = 6V
f = 60MHz
20
1.25
—
MHz
600
2
pF
1.7
pF
6
dB
* Pulse test tp = 300ms , Duty Cycle = 1%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 5/99
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