AP9466GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Fast Switching Characteristics
BVDSS
40V
RDS(ON)
13.5mΩ
ID
G
40A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9466GJ)
are available for low-profile applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+ 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
40
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
25
A
1
IDM
Pulsed Drain Current
150
A
PD@TC=25℃
Total Power Dissipation
36.7
W
Linear Derating Factor
0.29
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200806182
AP9466GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=26A
-
-
13.5
mΩ
VGS=4.5V, ID=16A
-
-
21
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=26A
-
24.5
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=26A
-
13.5
22
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
2.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.4
-
nC
VDS=20V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=26A
-
73
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=0.77Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Ω
Min.
Typ.
IS=26A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9466GH/J
150
80
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
120
90
5.0V
4.5V
60
10V
7.0V
5.0V
T C =150 o C
10V
7.0V
60
4.5V
40
20
V G =3.0V
30
V G =3.0V
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.2
I D =26A
I D =26A
V G =10V
T C =25 o C
Normalized RDS(ON)
1.8
RDS(ON) (mΩ)
16
12
1.4
1.0
8
0.6
2
4
6
8
10
-50
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2
25
1.8
20
1.6
VGS(th) (V)
IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
15
o
T j =150 C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
1.4
o
T j =25 C
10
1.2
5
1
0
0.8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9466GH/J
14
f=1.0MHz
10000
I D =26A
10
V DS =20V
V DS =24V
V DS =32V
8
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
Coss
Crss
100
4
2
10
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100
10us
100us
10
1ms
10ms
100ms
DC
o
1
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
9466GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E1
E
A1
B2
F
B1
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.69
0.88
B2
0.60
0.87
1.14
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.70
7.00
7.30
E1
5.40
5.80
6.20
e
----
2.30
----
F
5.88
6.84
7.80
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
9466GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
6