DMS3016SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS Features and Benefits • ID RDS(on) max TA = 25°C 13mΩ @ VGS = 10V 10.2A 16mΩ @ VGS = 4.5V 9.3A 30V • Description DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated Small form factor thermally efficient package enables higher density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • • • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data • • • • • • • • • DC-DC Converters Power management functions Analog Switch • Case: POWERDI3333-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) Drain POWERDI3333-8 Pin 1 S S 8 7 6 5 S G Gate D D D D Top View 2 3 4 Top View Pin Configuration 1 Bottom View Source Internal Schematic Ordering Information (Note 4) Part Number DMS3016SFG-7 DMS3016SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 1 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG YYWW Marking Information S30 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 09 = 2009) WW = Week code (01 ~ 53) S30 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±12 7.0 5.5 ID 6.4 5.1 A ID 10.2 8.1 A ID Pulsed Drain Current (10us pulse, duty cycle=1%) Avalanche Current (Note 7) Repetitive Avalanche Energy (Note 7) L = 0.3mH IDM IAR EAR Units V V A 9.3 7.4 80 13 24 A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W °C/W °C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7 .IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 1,000 100 RDS(ON) Limited ID(A) @PW =100µs ID(A) @PW =1ms P(PK), PEAK TRANSIENT POIWER (W) Notes: PD Value 0.98 2.08 127 60 3.42 -55 to +150 ID, DRAIN CURRENT (A) 100 ID (A) @PW =10ms 10 ID(A) @ DC ID(A) @PW =10s 1 ID(A) @PW =1s ID(A) @PW =100ms 0.1 T J(MAX) = 150°C T A = 25 °C Single Pulse 0.01 0.01 ID(A) @ PW=10µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 100 90 80 Single Pulse RθJA = 54° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 2 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R θJA(t)=r(t) * R θJA R θJA = 54°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ±100 µA VGS(th) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD IS 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 12 25 0.37 ⎯ 2.2 13 16 ⎯ 0.6 5 Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1886 372 128 2.0 19.5 44.6 4.8 4.6 5.8 23.7 35.4 7.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ S V A Test Condition VGS = 0V, ID = 1mA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 11.2A VGS = 4.5V, ID = 10.A VDS = 5V, ID = 11.2A VGS = 0V, IS = 1A pF VDS = 15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, VGS = 10V ID = 11.2A ns VGS = 10V, VDD = 15V, RG = 3Ω, RL = 1.2Ω 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 3 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG 30 30 VGS = 150°C VGS = 10V 25 20 VGS = 3.0V 15 VGS = 2.5V 10 VGS = 1.8V 0 0 0.016 0.014 VGS = 4.5V 0.01 VGS = 10V 0.006 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 10 VGS = 4.5V ID = 5A 1.3 VGS = 10V ID = 10A 1.1 0.9 0.7 VGS = 25°C VGS = -55°C 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 4 0.022 VGS = 4.5V 0.02 T A = 150°C 0.018 T A = 125°C 0.016 TA = 85°C 0.014 T A = 25°C 0.012 0.01 TA = -55°C 0.008 0.006 0.004 0.002 0 30 1.7 1.5 VGS = 125°C 0.024 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 0.008 15 0 0 2 0.018 0.012 20 5 VGS = 2.0V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristics VDS = 5V VGS = 85°C VGS = 2.2V 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 30 0.02 0.018 VGS = 4.5V ID = 5A 0.016 0.014 0.012 VGS = 10V ID = 10A 0.01 0.008 0.006 0.004 0.002 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 4 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG 30 25 1.5 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 ID = 100mA 1 15 10 5 0 0.2 0.5 -50 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 10,000 TA = 150°C C ISS 1,000 C OSS CRSS 100 10 0 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 10,000 f = 1MHz IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) T A = 25°C 20 4 6 8 10 12 14 TA = 125°C 1,000 T A = 85°C 100 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance 10 TA = 25°C 1 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 11.2A 6 4 2 0 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics 50 POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 5 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 6 of 7 www.diodes.com October 2012 © Diodes Incorporated DMS3016SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2012, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMS3016SFG Document number: DS35434 Rev. 7 - 2 7 of 7 www.diodes.com October 2012 © Diodes Incorporated