HDSEMI BZT52C13S Sod323 plastic-encapsulate diode Datasheet

BZT52C2V4S THRU BZT52C39S
SOD323 Plastic-Encapsulate Diodes
Zener Diodes
Features
●Pd
●Vz
SOD3 23
200mW
2.4V- 39V
Applications
● Stabilizing Voltage
Unit
Pd
mW
Zener current
IZ
mA
PV /VZ
Maximum junction temperature
Tj
℃
150
Tstg
℃
-65 to +150
Power dissipation
Storage temperature range
Conditions
Max
Symbol
Item
TA =25℃
200
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol
Thermal resistance
RθJA
Forward voltage
VF
Unit
Conditions
Max
℃/W
Between junction and ambient
625
V
I F =10mA
0.9
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Maximum
Typical
Maximum Zener Impedance
Reverse
Temperature
(Note 3)
Current
Coefficient
(Note 2)
@IZTC mV/℃
Test
Current
Zener Voltage Range (Note 2)
TYPE
IZTC
Marking
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
(mA)
ZZT@IZT
ZZK@IZK
Ω
IZK
IR
VR
(mA)
μA
V
Min
Max
mA
BZT52C2V4S
WX
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2
2.5
5
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13
5
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14
5
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16
5
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
Notes:1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
High Diode Semiconductor
2
Typical Characteristics
Zener Characteristics(11 V to 39 V)
Zener Characteristics(VZ Up to 10 V)
100
100
Ta =25℃
Ta =25℃
Pulsed
10
39
33
30
27
24
20
18
38
0.5
1
2
3
4
5
6
7
8
9
10
10
11
12
14
16
18
VZ, ZENER VOLTAGE (V)
20
22
24
26
28
30
32
34
40
42
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
Typical Leakage Current
40
100
TYPICAL Ta VALUES
35
FOR BZT52C2V4S SERIES
10
30
IR, LEAKAGE CURRENT (uA)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
36
1
0.5
25
20
VZ @ IZT
15
10
5
1
0.1
0.01
Ta=100℃
1E-3
0
Ta=25℃
-5
1E-4
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
0
40
5
VZ, NOMINAL ZENER VOLTAGE (V)
10
15
20
25
30
35
40
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
1000
Ta=25℃
Ta =25℃
IZ(AC)=0.1IZ(DC)
IZ=1mA
f=1kHz
0V BIAS
100
ZZT, DYNAMIC IMPEDANCE(Ω)
C, CAPACITANCE (pF)
36
1
22
PD =200mW
11
12
13
10
9.1
7.5
8.2
6.2
6.8
5.6
4.7
5.1
10
15
IZ, ZENER CURRENT (mA)
PD =200mW
2.4
IZ, ZENER CURRENT (mA)
Pulsed
1V BIAS
BIAS AT
50% OF VZ NOM
10
1
100
5mA
10
1
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
200
POWER DISSIPATION
PD
(mW)
250
150
100
50
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
High Diode Semiconductor
3
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOD323
1.46
2.9
1.25
High Diode Semiconductor
5