BSL606SN OptiMOS™-3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 95 ID 4.5 A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP-6 • 100%lead-free; Halogen-free; RoHS compliant 6 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen-free Package BSL606SN PG-TSOP-6 H6327: 3000 pcs/reel sPW Yes Non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 4.5 T A=70 °C 3.6 18.1 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=4.5 A, R GS=25 W 14 mJ Reverse diode dv /dt dv /dt I D=4.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation 1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 2.0 W -55 ... 150 °C class 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 Rev 2.2 ±20 55/150/56 page 1 2013-04-05 BSL606SN Parameter Values Symbol Conditions Unit min. typ. max. - - 62.5 Thermal characteristics SMD version, device on PCB R thJA @6cm2 cooling area 1) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 60 - - Gate threshold voltage V GS(th) V DS=0 V, I D=15 µA 1.3 1.8 2.3 Drain-source leakage current I DSS V DS=60 V, V GS=0 V, T j=25 °C - - 1 V DS=60 V, V GS=0 V, T j=150 °C - - 100 V mA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=3.6 A - 69 95 mW V GS=10 V, I D=4.5 A - 49 60 7.1 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=3.6 A S 1) Performed on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. Rev 2.2 page 2 2013-04-05 BSL606SN Parameter Values Symbol Conditions Unit min. typ. max. - 494 657 - 131 174 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 10.2 15.3 Turn-on delay time t d(on) - 6.8 - Rise time tr - 3.0 - Turn-off delay time t d(off) - 18 - Fall time tf - 3.1 - Gate to source charge Q gs - 1.7 2.2 Gate to drain charge Q gd - 1.0 1.5 Gate charge total Qg - 3.7 5.6 Gate plateau voltage V plateau - 3.4 - V - - 0.9 A - - 18.1 - 0.9 1.1 V - 21 - ns - 24 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=4.5 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=48 V, I D=4.5 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.2 T A=25 °C V GS=0 V, I F=4.5 A, T j=25 °C V R=10 V, I F=4.5 A, di F/dt =200 A/µs page 3 2013-04-05 BSL606SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2.2 5 2 4.5 1.8 4 1.6 3.5 1.4 1.2 ID [A] Ptot [W] 3 1 2.5 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 0 0 40 80 120 160 0 20 40 60 TA [°C] 80 100 120 140 160 101 102 103 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 102 0.5 1 µs 101 100 µs 0.2 10 µs 1 ms 101 0.1 ZthJA [K/W] ID [A] 10 ms DC 100 0.05 0.02 0.01 100 single pulse 10-1 10-2 10-1 10-1 100 101 102 VDS [V] Rev 2.2 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-04-05 BSL606SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 150 3V 4V 9 3.3 V 10 V 3.5 V 4.5 V 8 7 100 4V RDS(on) [mW] 6 ID [A] 3.5 V 5 4 3.3 V 4.5 V 50 10 V 3 2 3V 1 2.8 V 0 0 0 2 4 6 8 0 2 4 VDS [V] 6 8 10 8 10 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 10 12 9 10 8 7 8 gfs [S] ID [A] 6 5 6 4 4 3 150 °C 25 °C 2 2 1 0 0 0 1 2 3 4 5 VGS [V] Rev 2.2 0 2 4 6 ID [A] page 5 2013-04-05 BSL606SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=4.5 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=15 µA parameter: I D 120 2.8 2.4 100 max 2 typ max VGS(th) [V] RDS(on) [mW] 80 60 typ 1.6 min 1.2 40 0.8 20 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 Ciss 100 25 °C 150 °C 150 °C, 98% IF [A] C [pF] Coss 102 10-1 25 °C, 98% 10-2 Crss 101 10-3 0 10 20 30 VDS [V] Rev 2.2 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-04-05 BSL606SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=4.5 A pulsed parameter: T j(start) parameter: V DD 10 7 6 25 °C 5 30 V 1 12 V VGS [V] IAV [A] 100 °C 125 °C 48 V 4 3 0.1 2 1 0.01 0 1 10 100 1000 0 1 2 3 4 5 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 65 V GS 64 Qg 63 VBR(DSS) [V] 62 61 60 V gs(th) 59 58 57 Q g(th) Q sw 56 Q gs 55 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.2 page 7 2013-04-05 BSL606SN Package Outline: TSOP-6 Footprint: Packaging: Dimensions in mm Rev 2.2 page 8 2013-04-05 BSL606SN Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2013-04-05