BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 (PNP) 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E 3=C SOT23 BSS81B CDs 1=B 2=E 3=C SOT23 BSS81C CGs 1=B 2=E 3=C SOT23 BSS79 BSS81 40 35 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-base voltage VCBO 75 Emitter-base voltage VEBO 6 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 800 1 Unit V V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V V(BR)CEO BSS79 40 - - BSS81 35 - - V(BR)CBO 75 - - V(BR)EBO 6 - - ICBO - - 10 nA ICBO - - 10 µA IEBO - - 10 nA Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V - hFE BSS79/81B 20 - - BSS79/81C 35 - - BSS79/81B 25 - - BSS79/81C 50 - - BSS79/81B 35 - - BSS79/81C 75 - - BSS79/81B 40 - 120 BSS79/81C 100 - 300 BSS79/81B 25 - - BSS79/82C 40 - - Collector-emitter saturation voltage1) V VCEsat IC = 150 mA, IB = 15 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 1.3 IC = 150 mA, IB = 15 mA - - 1.2 IC = 500 mA, IB = 50 mA - - 2.0 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t ≤=300µs, D = 2% 2 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 6 - pF td - - 10 ns tr - - 25 tstg - - 250 tf - - 60 AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Test circuits Delay and rise time Storage and fall time 30 V 30 V ~100 µ s 200 Ω Osc. 9.9 V 0 16.2 V 619 Ω 200 Ω < 5 ns 1 kΩ 0 0.5 V Osc. -13.8 V ~ 500 µ s EHN00045 -3.0 V EHN00046 Oscillograph: R > 100k C < 12pF tr < 5ns 3 Nov-30-2001 BSS79, BSS81 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 C cb BSS 79/81 EHP00672 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 20V BSS 79/81 EHP00673 Ptot max 5 Ptot DC 10 3 tp tp D= T 10 2 V CB Permissible pulse load 10 3 5 V BSS 79/81 EHP00674 MHz fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 2 10 2 5 5 2 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 5 10 3 ΙC tp 4 Nov-30-2001 BSS79, BSS81 Saturation voltage IC = f (VBEsat , VCEsat) DC current gain hFE = f (I C) hFE = 10 VCE = 10V ΙC 10 3 EHP00756 2 BSS 79/81 EHP00676 mA 10 2 5 h FE 150 ˚C 5 V BE V CE 25 ˚C 10 10 2 1 -50 ˚C 5 5 10 0 0.2 0 0.4 10 1 -1 10 0.8 1.0 V 1.2 V BE sat , V CE sat 0.6 10 0 10 Delay time td = f (IC ) Storage time t stg = f (I C) Rise time tr = f (IC) Fall time 10 3 ns td, tr BSS 79/81 EHP00677 10 3 1 2 10 ΙC mA 10 3 t f = f (IC) BSS 79/81 EHP00678 ns 5 t stg , t f 5 VCC = 30 V h FE = 10 tr 10 2 5 t stg t r VBE = 5 V td VBE = 2 V hFE = 10 10 2 5 tf h FE = 20 hFE = 10 td V BE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 10 10 1 1 10 3 ΙC 5 10 2 mA 5 10 3 ΙC 5 Nov-30-2001