AP9971AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant BVDSS 60V RDS(ON) 36mΩ ID G 22A S Description AP9971A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9971AGJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 22 A ID@TC=100℃ Drain Current, VGS @ 10V 14 A 80 A 34.7 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 3.6 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201501263 AP9971AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=1mA 60 - - V VGS=10V, ID=15A - - 36 mΩ VGS=6V, ID=10A - - 50 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=15A - 12.4 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=15A - 17 27 nC Qgs Gate-Source Charge VDS=48V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6.4 - nC td(on) Turn-on Delay Time VDS=30V - 6.6 - ns tr Rise Time ID=15A - 22 - ns td(off) Turn-off Delay Time RG=3.3Ω - 17 - ns tf Fall Time VGS=10V - 4.3 - ns Ciss Input Capacitance VGS=0V - 625 1000 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=15A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=15A, VGS=0V - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971AGH/J-HF 80 50 7 .0 V 40 60 ID , Drain Current (A) ID , Drain Current (A) 10 V 7 .0 V T C = 150 o C 10 V T C = 25 o C 40 5.0 V 4.5 V 5.0 V 30 4.5 V 20 V G = 4.0 V 20 10 V G = 4 .0V 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 50 I D =10A I D =15A V G =10V T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 1.6 40 30 1.2 0.8 20 0.4 2 4 6 8 10 -50 1.5 16 1.3 Normalized VGS(th) IS(A) 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage 12 0 o V GS Gate-to-Source Voltage (V) T j =25 o C 8 1.1 0.9 0.7 4 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971AGH/J-HF f=1.0MHz 1000 12 C iss V DS = 30 V V DS = 36 V V DS = 48 V 8 C (pF) VGS , Gate to Source Voltage (V) I D = 15 A 10 6 100 C oss C rss 4 2 10 0 0 4 8 12 16 1 20 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us ID (A) 10 1ms 1 10ms 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9971AGH/J-HF MARKING INFORMATION TO-251 9971AGJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence TO-252 9971AGH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5