Fairchild FCH47N60N 1112 N-channel mosfet Datasheet

SupreMOS
TM
FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ
Features
Description
o
• 650V @TJ = 150 C
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
• RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
• Ultra Low Gate Charge ( Typ.Qg =115nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
Ratings
600
Units
V
±30
V
-Continuous (TC = 25oC)
47
-Continuous (TC = 100oC)
29.7
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
15.7
A
EAR
Repetitive Avalanche Energy
3.7
mJ
100
V/ns
20
V/ns
dv/dt
- Pulsed
A
141
A
(Note 2)
3068
mJ
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
368
W
- Derate above 25oC
2.94
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.34
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.24
RθJA
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
FCH47N60N Rev. C1
Units
o
C/W
40
1
www.fairchildsemi.com
FCH47N60N 600V N-Channel MOSFET
December 2011
Device Marking
FCH47N60N
Device
FCH47N60N
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
0.78
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1mA, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 480V, VGS = 0V
-
-
10
VDS = 480V, VGS = 0V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
2
ID = 1mA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
-
4
V
Static Drain to Source On Resistance
VGS = 10V, ID = 23.5A
51.5
62.0
mΩ
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
56
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380V, VGS = 0V, f = 1MHz
Cosseff.
Effective Output Capacitance
VDS = 0V to 380V, VGS = 0V
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance(G-S)
VDS = 100V, VGS = 0V
f = 1MHz
VDS = 380V, ID = 23.5A,
VGS = 10V
(Note 4)
Drain Open
-
5037
6700
pF
-
200
270
pF
-
2.5
4.0
pF
-
108
-
511
-
115
-
21
nC
-
34
nC
-
0.9
Ω
-
11
32
ns
-
9
28
ns
-
135
280
ns
-
22
54
ns
pF
pF
151
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380V, ID = 23.5A
RGEN = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
47
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
141
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 23.5A
-
-
1.2
V
trr
Reverse Recovery Time
-
495
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 23.5A
dIF/dt = 100A/μs
-
12
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 15.7A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60N Rev. C1
2
www.fairchildsemi.com
FCH47N60N 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
500
VGS = 15V
10V
8V
6V
5V
100
ID, Drain Current[A]
ID, Drain Current[A]
100
10
o
150 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
1
0.1
1
10
VDS, Drain-Source Voltage[V]
1
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
140
120
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
2
100
VGS = 10V
80
VGS = 20V
60
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
2. 250μs Pulse Test
*Note: TC = 25 C
1
0.4
40
0
40
80
120
ID, Drain Current [A]
160
Figure 5. Capacitance Characteristics
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
5
10
10
VGS, Gate-Source Voltage [V]
Coss
4
Capacitances [pF]
10
Ciss
3
10
Crss
2
10
*Note:
1. VGS = 0V
2. f = 1MHz
10 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
FCH47N60N Rev. C1
1
10
100
VDS, Drain-Source Voltage [V]
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Note: ID = 23.5A
0
600
3
0
30
60
90
Qg, Total Gate Charge [nC]
120
www.fairchildsemi.com
FCH47N60N 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 23.5A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
50
1000
100
40
10μs
ID, Drain Current [A]
ID, Drain Current [A]
2.5
100μs
10
1ms
10ms
DC
Operation in This Area
is Limited by RDS(on)
1
*Notes:
o
20
10
1. TC = 25 C
0.1
30
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.05
0.01
t1
t2
0.02
*Notes:
0.01
Single pulse
0.001
-5
10
FCH47N60N Rev. C1
PDM
0.1
o
1. ZθJC(t) = 0.24 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FCH47N60N 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCH47N60N 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60N Rev. C1
5
www.fairchildsemi.com
FCH47N60N 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FCH47N60N Rev. C1
6
www.fairchildsemi.com
FCH47N60N 600V N-Channel MOSFET
Mechanical Dimensions
TO-247
FCH47N60N Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I61
FCH47N60N Rev. C1
8
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FCH47N60N 600V N-Channel MOSFET
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