MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW www.onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 MAXIMUM RATINGS (TA = 25°C) Rating XX MG G IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 XM 1 SOT−1123 CASE 524AA STYLE 1 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2000 October, 2016 − Rev. 8 1 Publication Order Number: DTA114E/D MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† MUN2111T1G, SMUN2111T1G 6A SC−59 (Pb−Free) 3000 / Tape & Reel SMUN2111T3G 6A SC−59 (Pb−Free) 10000 / Tape & Reel MMUN2111LT1G, SMMUN2111LT1G A6A SOT−23 (Pb−Free) 3000 / Tape & Reel MMUN2111LT3G, SMMUN2111LT3G A6A SOT−23 (Pb−Free) 10000 / Tape & Reel MUN5111T1G, SMUN5111T1G 6A SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel DTA114EET1G, NSVDTA114EET1G 6A SC−75 (Pb−Free) 3000 / Tape & Reel DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT−723 (Pb−Free) 8000 / Tape & Reel F SOT−1123 (Pb−Free) 8000 / Tape & Reel Device NSBA114EF3T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad 200 150 (1) (2) (3) (4) (5) 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2111) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD mW/°C (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD mW/°C (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD mW/°C (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, (Note 1) Junction to Lead (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTA114EE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) Junction and Storage Temperature Range mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient PD (Note 1) (Note 2) Junction and Storage Temperature Range 1. 2. 3. 4. FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR−4 @ 100 mm2, 1 oz. copper traces, still air. FR−4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 3 mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 254 297 2.0 2.4 mW THERMAL CHARACTERISTICS (SOT−1123) (NSBA114EF3) Total Device Dissipation TA = 25°C (Note 3) (Note 4) Derate above 25°C (Note 3) (Note 4) Thermal Resistance, Junction to Ambient PD (Note 3) (Note 4) Thermal Resistance, Junction to Lead (Note 3) Junction and Storage Temperature Range 1. 2. 3. 4. mW/°C RqJA 493 421 °C/W RqJL 193 °C/W TJ, Tstg −55 to +150 °C FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR−4 @ 100 mm2, 1 oz. copper traces, still air. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.5 50 − − 50 − − 35 60 − − − 0.25 − 1.2 0.8 2.5 1.8 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 10 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Input Resistor R1 7.0 10 13 Resistor Ratio R1/R2 0.8 1.0 1.2 Vdc Vdc Vdc Vdc Vdc kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 TYPICAL CHARACTERISTICS MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3 1000 IC/IB = 10 VCE = 10 V TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 25°C 75°C 0.1 0.01 20 0 40 60 TA = 75°C 100 10 80 −25°C 25°C 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 100 8 IC, COLLECTOR CURRENT (mA) f = 10 kHz lE = 0 A TA = 25°C 7 6 5 4 3 2 1 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 25°C TA = −25°C 10 1 0.1 0.01 0.001 50 75°C VO = 5 V 1 0 2 6 7 3 4 5 Vin, INPUT VOLTAGE (V) 100 VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 8 9 Figure 5. Output Current vs. Input Voltage Figure 4. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 10 9 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 5 50 10 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 TYPICAL CHARACTERISTICS − NSBA114EF3 1000 IC/IB = 10 hFE, DC CURRENT GAIN 25°C 25°C 150°C 0.1 −55°C 0.01 0 10 20 30 40 100 −55°C 10 10 1 100 Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 100 f = 10 kHz IE = 0 A TA = 25°C 5 4 3 2 1 10 20 30 40 −55°C 10 25°C 1 0.1 VO = 5 V 0.01 50 150°C 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) 0 0.1 IC, COLLECTOR CURRENT (mA) 6 0 1 50 IC, COLLECTOR CURRENT (mA) 7 Cob, OUTPUT CAPACITANCE (pF) 150°C VCE = 10 V IC, COLLECTOR CURRENT (mA) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 25°C 10 −55°C 1 0.1 150°C VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current www.onsemi.com 6 50 8 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− 1 3 E 2 TOP VIEW A c DIM A b b1 c D E e HE L L2 HE SIDE VIEW 3X STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR b L2 0.08 X Y e 2X 3X b1 MILLIMETERS MIN MAX 0.34 0.40 0.15 0.28 0.10 0.20 0.07 0.17 0.75 0.85 0.55 0.65 0.35 0.40 0.95 1.05 0.185 REF 0.05 0.15 L BOTTOM VIEW SOLDERING FOOTPRINT* 1.20 3X 0.34 0.26 1 0.38 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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