TOSHIBA TLP598B

TLP598B
TOSHIBA Photocoupler Photo Relay
TLP598B
Telecommunication
Data Acquisition
Measurement Instrumentation
Unit in mm
The TOSHIBA TLP598B consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a photo−MOS FET in a six
lead plastic DIP (DIP6).
The TLP598B is a bi−directional switch which can replace mechanical
relays in many applications.
·
Peak off-state voltage: 100V (min.)
·
On−state current: 200mA (max.) (A connection)
·
On−state resistance: 4Ω (max.) (A connection)
·
Isolation voltage: 2500Vrms (min.)
·
UL recognized: UL1577, file No. E67349
·
Trigger LED current (Ta = 25°C)
TOSHIBA
11−9A1
Weight: 0.49 g
Trigger LED Current
(mA)
Classification
(Note 1)
@ION = 200mA
Marking Of
Classification
Min.
Max.
(IFT2)
—
2
T2
Standard
—
5
T2, blank
(Note 1): Application type name for certification test, please use standard
product type name, i.e.
TLP598B (IFT2) : TLP598B
Pin Configuration (top view)
Schematic
1
6
1
2
5
3
4
1 : Anode
2 : Cathode
3 : Nc
4 : Drain D1
5 : Source
6 : Drain D2
2
6
5
4
1
2002-09-25
TLP598B
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
30
mA
∆IF / °C
-0.3
mA / °C
Peak forward current (100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VOFF
100
V
Forward current
LED
Forward current derating (Ta ≥ 25°C)
Off-state output terminal voltage
A connection
On-state RMS current
200
ION
Detector
B connection
On-state current derating (Ta ≥ 25°C)
C connection
400
A connection
-2
-3
∆ION / °C
B connection
mA
300
mA / °C
-4
C connection
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
Isolation voltage (AC, 1min, R.H. ≤ 60%)
(Note 2)
(Note 2) : Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and
6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VDD
—
—
80
V
Forward current
IF
10
15
20
mA
On-state current
ION
—
—
200
mA
Operating temperature
Topr
-20
—
80
°C
Circuit Connections
1
6
2
5
3
4
A connection
LOAD
or
AC
DC
1
6
2
5
3
4
B connection
2
LOAD
DC
1
6
2
5
3
4
LOAD
DC
C connection
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TLP598B
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.2
1.4
1.7
V
Reverse current
IR
VR = 3 V
—
—
10
µA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Off-state current
IOFF
VOFF = 100 V
—
—
1
µA
Capacitance
COFF
V = 0, f = 1 MHz
—
—
—
pF
Min.
Typ.
Max.
Unit
ION = 200 mA
—
1
5
mA
ION = 200 mA, IF = 10 mA
—
3.0
4
ION = 300 mA, IF = 10 mA
—
1.5
2
ION = 400 mA, IF = 10 mA
—
0.75
1
Min.
Typ.
Max.
Unit
0.8
—
pF
Ω
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Trigger LED current
IFT
A connection
On-state
Resistance
RON
B connection
C connection
Test Condition
Ω
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Isolation resistance
RS
Test Condition
VS = 0 V, f = 1 MHz
—
10
5 ´ 10
10
—
2500
—
—
AC, 1 second (in oil)
—
5000
—
DC, 1 minute (in oil)
—
5000
—
VDC
Min.
Typ.
Max.
Unit
—
0.2
0.5
—
0.2
0.5
VS = 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BVS
14
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn-on time
tON
Turn-off time
tOFF
Test Condition
VDD = 20 V, RL = 200Ω
IF = 10 mA
(Note 3)
ms
(Note 3) : Switching time test circuit
VDD
IF
1
6
IF
RL
VOUT
2
4
90%
10%
VOUT
tON
3
tOFF
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TLP598B
IF – Ta
PC – Ta
100
200
Allowable MOS FET power dissipation
PC (mW)
B connection
Allowable forward current
IF (mA)
80
60
40
20
0
-20
0
40
20
80
60
160
connection
120
80
40
0
-20
100
A,C
0
Ambient temperature Ta (°C)
20
(mA)
On-state current ION(RMS)
(mA)
Forward current IF
30
10
5
3
1.6
100
ION(RMS) – Ta
50
1.4
80
500
Ta = 25°C
1.2
60
Ambient temperature Ta (°C)
IF – VF
100
1
1.0
40
1.8
Foward voltage VF
2.0
C connection
400
B connection
300
A connection
200
100
0
-20
2.2
(V)
0
20
40
60
80
100
Ambient temperature Ta (°C)
IFP – DR
5000
Pulse width ≤ 100µs
Pulse forward current
IFP
(mA)
3000
Ta = 25°C
1000
500
300
100
50
30
10
3
10−3
3
10−2
3
10−1
3
10０
Duty cycle ratio DR
4
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TLP598B
ION – IF
240
RON – Ta
4.0
A connection
0.4 V
0.3 V
120
0.2 V
80
0.1 V
40
0
0
2
4
6
Input current
IF
8
(9)
160
A connection
IF = 10 mA
3.5 ION = 200 mA
RON
VON = 0.5 V
3.0
On-state resistance
(mA)
200
On-state current ION
Ta = 25°C
2.5
2.0
1.5
1.0
-40
10
-20
(mA)
0
20
40
A connection
A connection
(mA)
2.0
IFT
0.6
ION = 200 mA
Trigger LED current
(V)
VON
On-state voltage
ION = 200 mA
0.8
150 mA
0.4
100 mA
0.2
50 mA
0
0
2
4
6
Input current
IF
8
1.5
1.0
0.5
0
10
-20
0
(mA)
20
40
60
80
100
Ambient temperature Ta (°C)
tON , tOFF – IF
ION – VON
500
A connection
Ta = 25°C
300
tON
(µA)
IF = 5 mA
100
Switching time
(mA)
100
IFT – Ta
2.5
Ta = 25°C
On-state current ION
80
Ambient temperature Ta (°C)
VON – IF
1.0
200
60
0
-100
tOFF
100
50
30
VCC = 20 V
RL = 200 Ω
Ta = 25°C
-200
-1.2
-0.8
-0.4
0
On-state voltage
0.4
0.8
10
1.2
VON (V)
1
3
5
Input current
5
10
IF
30
50
(mA)
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TLP598B
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-09-25