APT8020JFLL
800V
POWER MOS 7
R
33A 0.220Ω
FREDFET
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SO
"UL Recognized"
file # E145592
ISOTOP fi
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8020JFLL
UNIT
800
Volts
33
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
132
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
33
(Repetitive and Non-Repetitive)
1
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 16.5A)
TYP
MAX
UNIT
Volts
0.220
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7090 Rev C
Symbol
APT8020JFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
td(off)
tf
TYP
ID = 33A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
Turn-off Delay Time
ID = 33A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
760
VDD = 533V, VGS = 15V
715
ID = 33A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
10
RG = 0.6Ω
Eon
UNIT
pF
190
195
27
130
12
14
39
VDD = 400V
Rise Time
MAX
5200
1000
VGS = 10V
Qgs
tr
MIN
µJ
1250
VDD = 533V, VGS = 15V
ID = 33A, RG = 5Ω
780
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
dt
Characteristic / Test Conditions
MIN
TYP
MAX
33
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
132
Diode Forward Voltage
2
(VGS = 0V, IS = -33A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
1.4
Tj = 125°C
5.9
IRRM
Peak Recovery Current
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
10.8
Tj = 125°C
18.9
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.20
0.7
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7090 Rev C
5-2006
0.25
0.10
0.3
t1
t2
0.05
Duty Factor D = t1/t2
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 5.51mH, RG = 25Ω, Peak IL = 33A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.5
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0651
0.123
Dissipated Power
(Watts)
0.173
0.490
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
80
60
TJ = +125°C
40
TJ = -55°C
TJ = +25°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
6V
20
5.5V
5V
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
30
25
20
15
10
5
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50 60 70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 16.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 16.5A
GS
1.30
1.15
0
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6.5V
0
35
0.0
-50
7V
60
1.1
1.0
0.9
0.8
5-2006
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8V
VGS =15 &10 V
80
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
050-7090 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
ID, DRAIN CURRENT (AMPERES)
0.0528
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TC ( C)
ZEXT
TJ ( C)
0.0203
APT8020JFLL
100
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
I
D
= 33A
12
VDS=160V
8
VDS=400V
VDS=640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Crss
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
180
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
G
V
120
DD
R
G
J
L = 100µH
tf
= 533V
= 5Ω
T = 125°C
J
100
= 5Ω
T = 125°C
80
140
= 533V
DD
R
tr and tf (ns)
td(on) and td(off) (ns)
100
td(off)
160
L = 100µH
80
60
40
tr
60
40
20
td(on)
20
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
2000
0
10
60
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
= 533V
I
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery.
1500
Eoff
Eon
1000
500
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
2500
SWITCHING ENERGY (µJ)
200
100
200
5-2006
Coss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
1,000
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
050-7090 Rev C
APT8020JFLL
20,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
132
100
DD
D
30
= 533V
= 38A
T = 125°C
4000
J
L = 100µH
E ON includes
Eoff
diode reverse recovery.
3000
Eon
2000
1000
0
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8020JFLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
tr
90%
Drain Current
tf
90%
10%
0
5%
5%
Drain Voltage
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2006
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7090 Rev C
7.8 (.307)
8.2 (.322)