BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol VCBO Ta = 25°C unless otherwise noted Parameter Value Units Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V Collector-Emitter Voltage : BC846 65 V VCEO : BC847/850 45 V : BC848/849 30 V Emitter-Base Voltage : BC846/847 6 V VEBO : BC848/849/850 5 V Collector Current (DC) 100 mA IC Collector Power Dissipation 310 mW PC Junction Temperature 150 °C TJ Storage Temperature -65 to 150 °C TSTG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Symbol Parameter Ta = 25°C unless otherwise noted Test Condition ICBO Collector Cut-off Current VCB=30V, IE=0 DC Current Gain VCE=5V, IC=2mA hFE VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA VBE (sat) Collector-Base Saturation Voltage IC=100mA, IB=5mA VCE=5V, IC=2mA VBE (on) Base-Emitter On Voltage VCE=5V, IC=10mA Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz fT Output Capacitance VCB=10V, IE=0, f=1MHz Cob Input Capacitance VEB=0.5V, IC=0, f=1MHz Cib NF Noise Figure : BC846/847/848 VCE= 5V, IC= 200μA RG=2KΩ, f=1KHz : BC849/850 : BC849 VCE= 5V, IC= 200μA RG=2KΩ, f=30~15000Hz : BC850 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2011 Fairchild Semiconductor Corporation BC846 - BC850 Rev. B1 Min. Typ. 110 580 90 200 700 900 660 Max. Units 15 800 250 600 nA 700 720 300 3.5 9 6 2 1.2 1.4 1.4 10 4 4 3 mV mV mV mV mV mV MHz pF pF dB dB dB dB www.fairchildsemi.com 1 BC846 - BC850 — NPN Epitaxial Silicon Transistor April 2011 Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 Ordering Information Device(note1) Device Marking Package BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848AMTF BC848BMTF BC848CMTF BC849AMTF BC849BMTF BC849CMTF BC850AMTF BC850BMTF BC850CMTF 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC Packing Method Qty(pcs) Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Pin Difinitions 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 1.Base 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 2.Emitter 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector 3.Collector Note1 : Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape & reel type packing. © 2011 Fairchild Semiconductor Corporation BC846 - BC850 Rev. B1 www.fairchildsemi.com 2 BC846 - BC850 — NPN Epitaxial Silicon Transistor hFE Classification 10000 IB = 400μA IB = 350μA 80 VCE = 5V IB = 300μA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 100 IB = 250μA 60 IB = 200μA IB = 150μA 40 IB = 100μA 20 1000 100 IB = 50μA 10 0 0 4 8 12 16 1 20 10 Figure 1. Static Characteristic Figure 2. DC current Gain 100 10000 IC = 10 IB VBE(sat) 1000 VCE = 2V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 100 VCE(sat) 10 1 0.1 0.0 10 1 10 100 1000 100 f=1MHz 10 1 0.1 10 100 1000 0.6 0.8 1.0 1.2 1000 VCE=5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product © 2011 Fairchild Semiconductor Corporation BC846 - BC850 Rev. B1 0.4 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1 0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Cob[pF], CAPACITANCE 100 www.fairchildsemi.com 3 BC846 - BC850 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics BC846 - BC850 — NPN Epitaxial Silicon Transistor Physical Dimensions SOT-23 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation BC846 - BC850 Rev. B1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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