AMS8205A DESCRIPTION AMS8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. FEATURE PIN CONFIGURATION TSSOP-8 D2 8 S2 7 S2 6 G2 5 z z z z z AMS8205A SYA 1 D1 2 S1 3 S1 20V/6.0A, RDS(ON) = 30m-ohm@VGS =4.5V 20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSSOP-8 package design 4 G1 S：Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number AMS8205A Package Part Marking TSSOP-8 SYA Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) AMS8205A ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS8205A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +/-20 V ID 6.0 A Continuous Drain Current (TJ=150℃) TA=25°C 3.4 TA=70°C Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 2 A Power Dissipation PD 2.0 W TA=25°C 1.2 TA=70°C Operation Junction Temperature TJ -40/140 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W 2 Advanced Monolithic Systems http://www.ams-semitech.com AMS8205A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Condition Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA V VDS=0V,VGS=+/-20V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=85℃ VDS≦5V,VGS=4.5V 5 VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Forward Transconductance RDS(on) gfs Diode Forward Voltage Dynamic Total Gate Charge VSD Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-On Time Turn-Off Time 0.6 uA A 6 VGS=4.5V,ID=6.0A 0.024 0.030 VGS=2.5V,ID=5.0A 0.032 0.042 VDS=5V,ID=3.6A 10 IS=1.7A,VGS=0V 0.8 Qg Td(on) tr Td(off) tf V 1.2 VGS(th) Drain-source On-Resistance 20 Ω S 1.2 V 10.5 VDS=10V,VGS=4.5V,VDS=4A 2.5 nC 2.1 VDS=8V,VGS=0V f=1MHz VDD=10V, RL=10Ω, ID=1.0A, VGEN=4.5V, RG=10Ω 3 Advanced Monolithic Systems http://www.ams-semitech.com 805 155 122 14 6 45 20 pF nS AMS8205A TYPICAL CHARACTERICTICS 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS8205A TYPICAL CHARACTERICTICS 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS8205A TYPICAL CHARACTERICTICS 6 Advanced Monolithic Systems http://www.ams-semitech.com AMS8205A TSSOP-8 PACKAGE OUTLINE 7 Advanced Monolithic Systems http://www.ams-semitech.com