AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specifications). AOD404L is a Green Product ordering option. AOD404 and AOD404L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B A V Junction and Storage Temperature Range 200 IAR 30 A 120 mJ EAR 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 65 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case ±12 ID IDM PD TC=100°C TA=25°C Power Dissipation Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJL Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W AOD404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.002 1 1.6 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A µA 100 nA 2 V A 5.4 7 8.4 10.5 6.6 8 mΩ 1 V 85 A 2520 pF 90 0.74 2100 VGS=0V, VDS=15V, f=1MHz Units V 5 VGS(th) Coss Max TJ=55°C IGSS IS Typ mΩ S 536 pF 165 pF 0.95 1.2 Ω 19.7 24 nC 3.6 nC Qgd Gate Drain Charge 7.9 tD(on) Turn-On DelayTime 5.9 10 ns tr Turn-On Rise Time 11 17 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 36.2 55 ns 12 18 ns IF=20A, dI/dt=100A/µs 35 42 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 50 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev5: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.5V 50 50 40 125°C ID(A) ID (A) 40 30 30 20 25°C 20 VGS=2.5V 10 10 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 7.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance ID=20A 1.6 VGS=4.5V 6.5 VGS=10V 1.4 6 VGS=10V 5.5 VGS=4.5V 1.2 5 4.5 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 1.0E+01 16 125°C 1.0E+00 ID=20A 12 IS (A) RDS(ON) (mΩ) 3.5 1.8 7 RDS(ON) (mΩ) VDS=5V 3V 125°C 8 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 4 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 3000 Capacitance (pF) 4 VGS (Volts) 3500 VDS=15V ID=20A 3 2 1 2500 1500 Crss 500 0 5 10 15 20 0 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 100 10µs 1ms 10ms 100µs 0.1s 10 1s T J(Max)=150°C T A=25°C 1 10s 1 1 40 0 0.01 10 100 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 60 20 DC 0.1 0.1 30 T J(Max)=150°C T A=25°C 80 Power (W) ID (Amps) Coss 1000 0 ZθJA Normalized Transient Thermal Resistance Ciss 2000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 T on Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 T A=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ⋅ ID BV − VDD 20 0 0.00001 0.001 0.01 60 40 20 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 0 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175