UVEPROM AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT (Top View) UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation • MILITARY Processing Method MIL-PRF-38535, Class Q • Commercial Version Available FEATURES • • • • • • • • Organized 32,768 x 8 Single +5V ±10% power supply Pin-compatible with existing 256K ROM’s and EPROM’s All inputs/outputs fully TTL compatible Power-saving CMOS technology Very high-speed FLASHRITE Pulse Programming 3-state output buffers 400-mV DC assured noise immunity with standard TTL loads • Latchup immunity of 250 mA on all input and output pins • Low power dissipation (CMOS Input Levels) -Active - 165mW Worst Case -Standby - 1.7mW Worst Case (CMOS-input levels) * FUTURE High Speed Offerings: 55ns, 70ns, 90ns • Timing 120ns access 150ns access 170ns access 200ns access 250ns access 300ns access 55ns access 70ns access 90ns access Vcc A14 A13 A8 A9 A11 G\ A10 E\ DQ7 DQ6 DQ5 DQ4 DQ3 A7 A12 A12 A14 6 VA10 PP NC NC CC VVCC A15 A14 CE2 A13 32-Pin LCC (ECA) (450 x 550 mils) 4 3 2 1 32 31 30 A6 5 A7 A5 6 A6 A4 7 A5 A3 8 A4 A2 9 A3 A2 A1 10 A1 A0 11 A0 NC 12 DQ1 DQ0 13 MARKING 29 A8 WE \ 28 A9 A13 27 A11 A8 26 NC A9 25 G\ A11 24 A10 OE \ 23 E\A10 22 DQ7 CE1\ 21 DQ6 DQ8 14 15 16 17 18 19 20 -12 -15 -17 -20 -25 -30 -55 -70 -90 Pin Name Pin- Name A0 A14 DQ0-DQ7 E\ G\ GND • Package(s) Ceramic DIP (600mils) J No. 110 Ceramic LCC (450 x 550 mils) ECA No. 208 • Processing / Operating Temperature Ranges Full Military (-55oC to +125oC) M Industrial (-40°C to +85°C) I Military Temp (-55oC to +125oC) XT AS27C256 Rev. 2.0 7/06 28 27 26 25 24 23 22 21 20 19 18 17 16 15 DQ1 DQ2 DQ2 DQ3 VSS GND DQ4 NC DQ5 DQ3 DQ6 DQ4 DQ7 DQ5 OPTIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Function Function Address Inputs Inputs (programming)/Outputs Chip Enable/Power Down Output Enable Ground VCC 5V Supply VPP 13V Programming Power Supply For more products and information please visit our web site at www.austinsemiconductor.com Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 UVEPROM AS27C256 Austin Semiconductor, Inc. GENERAL DESCRIPTION The AS27C256 series is a set of 262,144 bit, ultraviolet-light erasable, electrically programmable read-only memories. These devices are fabricated using power-saving CMOS technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 54 TTL circuits without the use of external pullup resistors. Each output can drive one Series 54 TTL circuit without external resistors. The data outputs are 3-state for connecting multiple devices to a common bus. The AS27C256 is pin-compatible with 28-pin 256K ROMs and EPROMs. It is offered in a 600mil dual-in-line ceramic package (J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for operation from -55°C to 125°C. Because this EPROM operates from a single 5V supply (in the read mode), it is ideal for use in microprocessor-based systems. One other supply (12.75V) is needed for programming. All programming signals are TTL level. This device is programmable by the AMD FLASHRITE Pulse programming algorithm. The FLASHRITE Pulse programming algorithm uses a VPP of 12.75VV and a VCC of 6.25V for a nominal programming time of four seconds. For programming outside the system, existing EPROM programmers can be used. Locations can be programmed singly, in blocks, or at random. FUNCTIONAL BLOCK DIAGRAM* EPROM 32,768 x 8 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 E\ G\ 10 9 8 7 6 5 4 3 25 24 21 23 2 26 27 20 22 0 A 0 32,767 A A A A A A A A 11 12 13 15 16 17 18 19 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 14 [PWR DWN] & EN * This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12. AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 UVEPROM AS27C256 Austin Semiconductor, Inc. OPERATION The seven modes of operation for the AS27C256 are listed in Table 1. The read mode requires a single 5V supply. All inputs are TTL level except for VPP during programming (12.75V for FLASHRITE Pulse), and (12V) on A9 for signature mode. TABLE 1. OPERATION MODES 1 2 MODE* OUTPUT STANDBY PROGRAMMING VERIFY DISABLE FUNCTION (PINS) READ E\ VIL VIL VIH VIL VIH G\ VIL VIH X VIH VIL X VIL VPP X1 X1 X1 VPP VPP VPP VCC VCC VCC VCC VCC+/-.3V VCC VCC VCC PROGRAM SIGNATURE MODE INHIBIT VIL VIH VCC A9 X X X X X X 2 VID A0 X X X X X X VIL DQ0-DQ7 Data Out High-Z High-Z Data In Data Out High-Z 2 VID VIH CODE** MFG DEVICE 01h 10h For normal standby & read operation, VPP is Don't Care X. VID = 12V +/- .5V NOTES: * X can be VIL or VIH ** Die is AMD. User can program on benchtop programmer by selecting AM27C256 from the device type selection menu. AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 UVEPROM Austin Semiconductor, Inc. AS27C256 READ/OUTPUT DISABLE FLASHRITE PULSE PROGRAMMING When the outputs of two or more AS27C256 are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from the competing outputs of the other devices. To read the output of the selected AS27C256, a low-level signal is applied to E\ and G\. All other devices in the circuit should have their outputs disabled by applying a high-level signal to one of these pins. Output data is accessed at pins DQ0 through DQ7. The AS27C256 EPROM is programmed by using the AMD FLASHRITE Pulse programming algorithm as illustrated by the flowchart in Figure 1. This algorithm programs the device in a nominal time of 4 seconds. Actual programming time varies as a function of the programmer used. LATCHUP IMMUNITY The FLASHRITE Pulse programming algorithm uses initial pulses of 100 microseconds (µs) followed by a byte-verification step to determine when the addressed byte has been successfully programmed. Up to 25 100µs pulses per byte are provided before a failure is recognized. Data is presented in parallel (eight bits) on pins DQ0 to DQ7. Once addresses and data are stable, E\ is pulsed. Latchup immunity on the AS27C256 is a minimum of 250mA on all inputs and outputs. This feature provides latchup immunity beyond any potential transients at the printed circuit board level when the EPROM is interfaced to industry standard TTL or MOS logic devices. Input/output layout approach controls latchup without compromising performance or packing density. The programming mode is achieved when VPP = 12.75V, VCC= 6.25V, G\ = VIH, and E\ = VIL. More than one device can be programmed when the devices are connected in parallel. Locations can be programmed in any order. When the AMD FLASHRITE Pulse programming routine is completed, all bits are verified with VCC = VPP = 5V. POWER DOWN Active ICC supply current can be reduced from 25mA (AS27C25612 through AS27C256-25) to 1mA (TTL-level inputs) or 300µA (CMOS-level inputs) by applying a high TTL/CMOS signal to the E\ pin. In this mode all outputs are in the high-impedance state. PROGRAM INHIBIT Programming can be inhibited by maintaining a high-level input on E\. ERASURE Before programming, the AS27C256 is erased by exposing the chip through the transparent lid to a high-intensity ultraviolet light (wavelength 2537 Å). EPROM erasure before programming is necessary to ensure that all bits are in the logic-high state. Logic-lows are programmed into the desired locations. A programmed logic-low can be erased only by ultraviolet light. The recommended minimum exposure dose (UV intensity x exposure time) is 15W•s/cm2. A typical 12mW/cm2, filterless UV lamp erases the device in 21 minutes. The lamp should be located about 2.5cm above the chip during erasure. After erasure, all bits are in the high state. It should be noted that normal ambient light contains the correct wavelength for erasure; therefore, when using the AS27C256, the window should be covered with an opaque label. AS27C256 Rev. 2.0 7/06 PROGRAM VERIFY Programmed bits can be verified with VPP = 12.75V when G\ = VIL, and E\ = VIH. SIGNATURE MODE The signature mode provides access to a binary code identifying the manufacturer and device type. This mode is activated when A9 is forced to 12V ±0.5V. Two identifier bytes are accessed by A0 (terminal 10); i.e., A0=VIL accesses the manufacturer code, which is output on DQ0-DQ7; A0=VIH accesses the device code, which is also output on DQ0-DQ7. All other addresses must be held at VIL. Each byte contains odd parity on bit DQ7. The manufacturer code for these devices is 01h and the device code is 10h. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 UVEPROM Austin Semiconductor, Inc. AS27C256 FIGURE 1. FLASHRITE PULSE PROGRAMMING FLOWCHART Start Address = First Location VCC=6.25V, VPP=12.75V X=0 Program One 100us Pulse Increment X Programming Section X = 25 ? FAIL Increment Address NO YES NO Program Verify Byte? Pass Last Address? Yes VCC = VPP = 5.25V Read Verify Section READ Verify Bytes? FAIL Device Failed Pass Device Passed AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 UVEPROM AS27C256 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Supply Voltage Range, VCC**...........................-0.6V to +7.0V Supply Voltage Range, Vpp**...............................-0.6V to +13.5V Input Voltage Range, All inputs except A9**..-0.6V to +6.0V A9.....-0.6V to +13.5V Output Voltage Range**...............................-0.6V to VCC +.6V Minimum Operating Free-air Temperature, TA..............-55°C Maximum Operating Case Temperature, TC...................125°C Storage Temperature Range, Tstg.....................-65°C to 150°C *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** All voltage values are with respect to GND. RECOMMENDED OPERATING CONDITIONS 1 VCC Supply Voltage VPP Supply Voltage Read Mode FLASHRITE Pulse programming algorithm MIN TYP 4.5 5 MAX 5.5 6 6.25 6.5 12.5 12.75 2 VIH Read Mode FLASHRITE Pulse programming algorithm 13 2.2 VCC+.6 CMOS inputs VCC-0.2 VCC+.6 TTL inputs CMOS inputs -0.5 -0.5 0.8 0.2 TTL inputs High-level input voltage VCC-0.6 VIL Low-level input voltage VID Voltage level on A9 for signature mode 11.5 TA Operating free-air temperature -55 TC Operating case temperature 12 12.5 +125 NOTES: 1. VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The deivce must not be inserted into or removed from the board when VPP or VCC is applied. 2. VPP can be connected to VCC directly (except in the program mode). VCC supply current in this case would be ICC2 + IPP1. ELECTRICAL CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE TEST CONDITIONS PARAMETER MIN TYP 1 MAX UNIT VOH High-level output voltage IOH = -400µA VOL Low-level output voltage IOL = 2.1mA 0.4 V II Input current (leakage) VI = 0V to 5.5V ±1 µA IO 2.4 V Output current (leakage) VO = 0V to V CC ±5 µA IPP1 VPP supply current VPP = VCC = 5.5V 100 µA IPP2 VPP supply current (during program pulse) 50 mA mA ICC1 ICC2 2 VCC supply current (standby) VCC supply current (active) 30 VPP = 13V TTL-Input Level VCC = 5.5V, E\=V IH 1 CMOS-Input Level VCC = 5.5V, E\=V CC 300 µA '27C256-12 '27C256-15 '27C256-17 '27C256-20,-25 tcycle = minimum, outputs open 25 mA E\=VIL, VCC=5.5V 15 NOTES: 1. Typical values are at TA=25°C and nominal voltages. 2. This parameter has been characterized at 25°C and is not tested. AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 UVEPROM AS27C256 Austin Semiconductor, Inc. CAPACITANCE OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE, f = 1MHz* PARAMETER TEST CONDITIONS TYP** MAX UNIT Ci Input capacitance VI = 0V 6 10 pF Co Output capacitance VO = 0V 10 14 pF * Capacitance measurements are made on a sample basis only. ** Typical values are at TA = 25°C and nominal voltages. SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE1,2 TEST PARAMETER -12 CONDITIONS 1, 2 -15 MIN MAX MIN MAX UNIT ta(A) Access time from address 120 150 ns ta(E) Access time from E\ 120 150 ns 40 50 ns 30 ns ten(G)R Output enable time from G\ tdis tv(A) see Figure 2 Disable time of output from G\ or E\, 0 3 whichever occurs first Output data valid time after change of 0 3 address, E\, or G\, whichever occurs first TEST PARAMETER 30 CONDITIONS 1, 2 0 0 ns -17 -20 -25 MIN MAX MIN MAX MIN MAX UNIT ta(A) Access time from address 170 200 250 ns ta(E) Access time from E\ 170 200 250 ns 50 60 60 ns 60 ns ten(G)R Output enable time from G\ tdis tv(A) see Figure 2 Disable time of output from G\ or E\, 0 3 whichever occurs first Output data valid time after change of 0 3 address, E\, or G\, whichever occurs first 40 0 50 0 0 0 ns NOTES: 1.Timing measurements are made at 2V for logic high and 0.8V for logic low (see figure 2). 2. Common test conditions apply for tdis except during programming. 3. Value calculated from 0.5V delta to measured output level. This parameter is only sampled and not 100% tested. SWITCHING CHARACTERISTICS FOR PROGRAMMING: VCC = 6.5V and VPP = 12.75V (AMD FLASHRITE ALGO), TA = 25°C PARAMETER tdis(G) Output disable time from G\ ten(G)W Output enable time from G\ AS27C256 Rev. 2.0 7/06 MIN 0 MAX 130 UNIT ns 150 ns Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 UVEPROM AS27C256 Austin Semiconductor, Inc. RECOMMENDED TIMING REQUIREMENTS FOR PROGRAMMING: VCC = 6.5 and VPP = 12.75V (AMD FLASHRITE ALGO), TA = 25°C (See Figure 2) MIN 0 TYP MAX UNIT µs th(A) Hold Time, Address th(D) Hold Time, Data 2 Pulse Duration, Initial Program 95 tsu(A) Setup Time, Address 2 µs tsu(G) Setup Time, G\ 2 µs tsu(E) Setup Time, E\ 2 µs tsu(D) Setup Time, Data 2 µs tsu(VPP) Setup Time, VPP 2 µs tsu(VCC) Setup Time, VCC 2 µs tw(E)PR µs 100 105 µs PARAMETER MEASUREMENT INFORMATION 2.08V RL = 800Ω Output Under Test CL = 100 pF1 NOTES: 1. CL includes probe and fixture capacitance. The AC testing inputs are driven at 2.4V for logic high and 0.4V for logic low. Timing measurements are made at 2V for logic high and 0.8V for logic low for both inputs and outputs. FIGURE 2. LOAD CIRCUIT AND VOLTAGE WAVEFORMS AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 UVEPROM Austin Semiconductor, Inc. AS27C256 FIGURE 3. READ-CYCLE TIMING FIGURE 4. PROGRAM-CYCLE TIMING (FLASHRITE PULSE PROGRAMMING) AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 UVEPROM AS27C256 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #110 (Package Designator J) D S2 A Q L E S1 b2 e b eA c Symbol A b b2 c D E eA e L Q S1 S2 SMD Specifications MIN MAX --0.232 0.014 0.026 0.045 0.065 0.008 0.018 --1.490 0.500 0.610 0.600 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --0.005 --- *All measurements are in inches. AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 UVEPROM AS27C256 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECA) D1 A L1 e E1 E See Detail A L D b Detail A b1 SYMBOL A b b1 D D1 E E1 e L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.022 0.028 0.006 0.022 0.442 0.458 0.300 BSC 0.540 0.560 0.400 BSC 0.050 BSC 0.045 0.055 0.075 0.095 *All measurements are in inches. AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 UVEPROM Austin Semiconductor, Inc. AS27C256 ORDERING INFORMATION EXAMPLE: AS27C256-30JM/MIL Device Number AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 Speed Package Type -55 -70 -90 -12 -15 -17 -20 -25 -30 Operating Temp. J J J J J J J J J * * * * * * * * * EXAMPLE: AS27C256-15ECAM Device Number AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 AS27C256 Speed -55 -70 -90 -12 -15 -17 -20 -25 -30 Package Type ECA ECA ECA ECA ECA ECA ECA ECA ECA Operating Temp. * * * * * * * * * *PROCESS / OPERATING TEMPERATURE M = Full Military Processing Per -55oC to +125oC MIL-PRF-3835, Class Q I = Industrial Temperature Range -40°C to +85°C XT = Military Temperature Range -55oC to +125oC AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 UVEPROM AS27C256 Austin Semiconductor, Inc. SMD ORDERING INFORMATION AS27C256 Rev. 2.0 7/06 SMD 5962-8606301XA 5962-8606311XA 5962-8606302XA 5962-8606312XA 5962-8606303XA 5962-8606313XA 5962-8606304XA 5962-8606314XA 5962-8606305XA 5962-8606315XA 5962-8606306XA 5962-8606316XA 5962-8606307XA 5962-8606317XA 5962-8606308XA 5962-8606318XA 5962-8606309XA 5962-8606319XA ASI PN AS27C256 -20JM AS27C256 -20JM AS27C256 -25JM AS27C256 -25JM AS27C256 -30JM AS27C256 -30JM AS27C256 -17JM AS27C256 -17JM AS27C256 -15JM AS27C256 -15JM AS27C256 -12JM AS27C256 -12JM AS27C256 -90JM AS27C256 -90JM AS27C256 -70JM AS27C256 -70JM AS27C256 -55JM AS27C256 -55JM SPEED 200ns 200ns 250ns 250ns 300ns 300ns 170ns 170ns 150ns 150ns 120ns 120ns 90ns 90ns 70ns 70ns 55ns 55ns PACKAGE 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP 600mil, 28LD. DIP SMD 5962-8606301YA 5962-8606311YA 5962-8606302YA 5962-8606312YA 5962-8606303YA 5962-8606313YA 5962-8606304YA 5962-8606314YA 5962-8606305YA 5962-8606315YA 5962-8606306YA 5962-8606316YA 5962-8606307YA 5962-8606317YA 5962-8606308YA 5962-8606318YA 5962-8606309YA 5962-8606319YA ASI PN AS27C256 -20ECA AS27C256 -20ECA AS27C256 -25ECA AS27C256 -25ECA AS27C256 -30ECA AS27C256 -30ECA AS27C256 -17ECA AS27C256 -17ECA AS27C256 -15ECA AS27C256 -15ECA AS27C256 -12ECA AS27C256 -12ECA AS27C256 -90ECA AS27C256 -90ECA AS27C256 -70ECA AS27C256 -70ECA AS27C256 -55ECA AS27C256 -55ECA SPEED 200ns 200ns 250ns 250ns 300ns 300ns 170ns 170ns 150ns 150ns 120ns 120ns 90ns 90ns 70ns 70ns 55ns 55ns PACKAGE 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC 32-LD. 0.450 x 0.550, LCC Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13