HDSEMI BZT52B3V6S Sod323 plastic-encapsulate diode Datasheet

BZT52B2V4S-BZT52B39S
SOD323 Plastic-Encapsulate Diodes
Zener Diodes
Features
●Pd
●Vz
SOD3 23
200mW
2.4V- 39V
Applications
● Stabilizing Voltage
Unit
Pd
mW
Zener current
IZ
mA
PV /VZ
Maximum junction temperature
Tj
℃
150
Tstg
℃
-65 to +150
Power dissipation
Storage temperature range
Conditions
Max
Symbol
Item
TA =25℃
200
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol
Thermal resistance
RθJA
Forward voltage
VF
Unit
Conditions
Max
℃/W
Between junction and ambient
625
V
I F =10mA
0.9
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Type
Type
Number
Code
Maximum Zener Impedance
Zener Voltage Range (Note 2)
VZ@IZT
Maximum
Reverse
(Note 3)
IZT
Nom(V)
Min(V)
Max(V)
mA
ZZT@IZT
ZZK@IZK
Ω
Current
Typical
Temperature
Coefficent
@IZTC
Test
Current
IZTC
IZK
IR
VR
mV/°C
mA
μA
V
Min
Max
mA
BZT52B2V4S
2WX
2.4
2.35
2.45
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52B2V7S
2W1
2.7
2.65
2.75
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52B3V0S
2W2
3.0
2.94
3.06
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52B3V3S
2W3
3.3
3.23
3.37
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52B3V6S
2W4
3.6
3.53
3.67
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52B3V9S
2W5
3.9
3.82
3.98
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52B4V3S
2W6
4.3
4.21
4.39
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52B4V7S
2W7
4.7
4.61
4.79
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52B5V1S
2W8
5.1
5.00
5.20
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52B5V6S
2W9
5.6
5.49
5.71
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52B6V2S
2WA
6.2
6.08
6.32
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52B6V8S
2WB
6.8
6.66
6.94
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52B7V5S
2WC
7.5
7.35
7.65
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52B8V2S
2WD
8.2
8.04
8.36
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52B9V1S
2WE
9.1
8.92
9.28
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52B10S
2WF
10
9.80
10.20
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52B11S
2WG
11
10.78
11.22
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52B12S
2WH
12
11.76
12.24
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52B13S
2WI
13
12.74
13.26
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52B15S
2WJ
15
14.70
15.30
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52B16S
2WK
16
15.68
16.32
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52B18S
2WL
18
17.64
18.36
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52B20S
2WM
20
19.60
20.40
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52B22S
2WN
22
21.56
22.44
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52B24S
2WO
24
23.52
24.48
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52B27S
2WP
27
26.46
27.54
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52B30S
2WQ
30
29.40
30.60
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52B33S
2WR
33
32.34
33.66
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52B36S
2WS
36
35.28
36.72
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52B39S
2WT
39
38.22
39.78
2
130
350
0.5
0.1
27.3
33.4
41.2
2
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
High Diode Semiconductor
2
Typical Characteristics
Zener Characteristics(VZ 5.1V to 20 V)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
Ta =25℃
Pulsed
PD =200mW
20
18
16
15
13
11
12
10
9.1
7.5
8.2
6.2
6.8
5.1
10
5.6
IZ, ZENER CURRENT (mA)
Temperature Coefficients
20
100
1
0.5
TYPICAL Ta VALUES
FOR BZT52BXXXS SERIES
15
VZ @ IZT
10
5
0
4
6
8
10
12
14
16
18
20
22
4
6
8
VZ, ZENER VOLTAGE (V)
12
14
16
18
20
22
Typical Capacitance
Typical Leakage Current
0.1
10
VZ, NOMINAL ZENER VOLTAGE (V)
1000
Ta=25℃
Pulsed
C, CAPACITANCE (pF)
IR, LEAKAGE CURRENT (uA)
f=1MHz
0.01
Ta=100℃
1E-3
0V BIAS
100
1V BIAS
10
BIAS AT
50% OF VZ NOM
Ta=25℃
1E-4
1
4
6
8
10
12
14
16
18
20
22
4
8
6
10
14
12
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
Effect of Zener Voltage on Zener Impedance
250
1000
Ta=25℃
(mW)
f=1kHz
200
PD
100
10
POWER DISSIPATION
ZZT, DYNAMIC IMPEDANCE(Ω)
IZ(AC)=0.1IZ(DC)
IZ=5mA
150
100
50
IZ=1mA
1
0
4
6
8
10
12
14
16
18
VZ, NOMINAL ZENER VOLTAGE (V)
20
22
0
25
50
75
AMBIENT TEMPERATURE
High Diode Semiconductor
100
Ta
125
150
(℃ )
3
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOD323
1.46
2.9
1.25
High Diode Semiconductor
5