DMNH6021SPSQ Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits RDS(ON) Max ID Max TC = +25°C 23mΩ @ VGS = 10V 55A 28mΩ @ VGS = 4.5V 48A BVDSS Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) 60V Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Mechanical Data Driving Solenoids Driving Relays Power Management Functions Case: PowerDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View S D S D S D G D Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 5) Part Number DMNH6021SPSQ-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking H6021SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) H6021SS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6021SPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V (Note 8) TC = +25°C TC = +100°C Value 60 ±20 55 39 55 88 35 64 Unit V V Value 1.6 96 3.0 50 53 1.5 -55 to +175 Unit W °C/W W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 8) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH (Note 9) Avalanche Energy, L = 0.1mH (Note 9) IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 8) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C Steady State TA = +25°C Steady State TC = +25°C Symbol PD RJA PD RJA PD RJC TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 12 18 0.75 3 23 28 1.2 V Static Drain-Source On-Resistance 1 - VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 12A VGS = 0V, IS = 20A - 1,016 153 76.8 2.5 9.5 19.7 3.6 4.8 4.2 13 27.5 15.3 20.8 13.9 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR - - mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 10A, Rg = 4.7Ω ns nC IF = 20A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6021SPSQ 30.0 30 VGS = 4.0V VDS = 10V V = 10 VGS GS = 10V 25.0 25 )A ( T 20 N E R R U 15 C N I A R D 10 ,D I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6.0V VGS = 5.0V 20.0 VGS = 4.5V VGS = 3.5V 15.0 10.0 VGS = 3.0V 5.0 TA = 175°C TA = 150°C 5 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 22 VGS = 4.5V 20 18 16 VGS = 10V 14 12 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 24 0.035 ) ( E C N 0.03 A T S IS E R 0.025 -N O E C 0.02 R U O S -N 0.015 IA R D , )N 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 10V TA = 175°C 4.5 50 ID = 15A 45 40 ID = 12A 35 30 25 20 15 10 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 VGS = 10V ID = 15A 1.8 1.6 VGS = 4.5V ID = 12A 1.4 1.2 1 0.8 0.6 R 0 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.2 O (S D 0.005 1 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 30 3 of 7 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature June 2016 © Diodes Incorporated 2.5 0.05 2.3 0.01 ) V ( E G A T L O V D L O H S E R H T E T A G , )h 0.005 V 0.7 0.045 VGS = 4.5V ID = 12A 0.04 0.035 0.03 0.025 VGS = 10V ID = 15A 0.02 0.015 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMNH6021SPSQ (tS G 0 -50 ID = 1mA 1.7 1.3 1.1 0.9 1400 EAS, AVALANCHE ENERGY (mJ) 25 20 15 175°C TA = 175癈 TA = 85° 85癈C 10 S TA = 150癈 150°C TA = 25° 25癈C 125°C TA = 125癈 5 TA = -55癈 -55°C 0 1300 1200 1100 1000 900 I D = 6A 800 700 600 ID = 10A 500 400 300 200 I D = 15A 100 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 25 1.5 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE TJ, Junction Temperature (°C) ( C) Figure 10 Avalanche Energy 175 10 V GS GATE THRESHOLD VOLTAGE (V) 10000 f=1MHz CJ, JUNCTION CAPACITANCE (pF) ID = 250µA 1.5 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 30 ISI ,,SOURCE SOURCECURRENT CURRENT(A) (A) 1.9 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 0 2.1 Ciss 1000 Coss 100 Crss 8 4 2 0 10 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 4 of 7 www.diodes.com VDS = 30V ID = 20A 6 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 20 June 2016 © Diodes Incorporated DMNH6021SPSQ P(PK), PEAK TRANSIENT POWER (W) 100000 10000 Single Pulse RθJC = 1.46℃/W RθJC(t) = r(t) * RθJC TJ-TC = P*RθJC(t) 1000 100 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) 10 100 1000 Figure 13 Single Pulse Maximum Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 1.46℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 June 2016 © Diodes Incorporated DMNH6021SPSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMNH6021SPSQ Document number: DS38394 Rev.4 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 June 2016 © Diodes Incorporated DMNH6021SPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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