Type BSS225 SIPMOS® Small-Signal-Transistor Product Summary Feature 600 V R DS(on),max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT89 Type Package Ordering Code Tape and Reel Information Marking BSS225 PG-SOT89 Q67042-S4266 E6327: 3000PCS/reel KD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ±20 ESD sensitivity (HBM) as per MIL-STD 883 A kV/µs V Class 1a Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.21 6 Unit 1.00 W -55 ... 150 °C 55/150/56 page 1 2005-02-25 BSS225 Parameter Values Symbol Conditions Unit min. typ. max. - - 125 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage 1) V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=0 V, I D=94 µA 1.3 1.9 2.3 Drain-source leakage current I D (off) V DS=600 V, V GS=0 V, T j=25 °C - - 0.1 V DS=600 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.09 A - 28 45 Ω V GS=10 V, I D=0.09 A - 30 45 |V DS|>2|I D|R DS(on)max, I D=0.075 A 0.05 0.14 - Transconductance 1) g fs S VDS is zero-hour rated, see note at p.8 Rev. 1.21 page 2 2005-02-25 BSS225 Parameter Values Symbol Conditions Unit min. typ. max. - 99 131 - 7.6 11 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.1 4.4 Turn-on delay time t d(on) - 14.0 20.0 Rise time tr - 38.0 57.0 Turn-off delay time t d(off) - 62.0 93 Fall time tf - 41.0 62 Gate to source charge Q gs - 0.32 0.43 Gate to drain charge Q gd - 1.4 2.1 Gate charge total Qg - 3.9 5.8 Gate plateau voltage V plateau - 3.3 - V - - 0.09 A - - 0.36 - 0.75 1.2 V - 246 370 ns - 248 373 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=10 V, I D=0.09 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=0.09 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.21 T A=25 °C V GS=0 V, I F=0.09 A, T j=25 °C V R=300 V, I F=0.09 A, di F/dt =100 A/µs page 3 2005-02-25 BSS225 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.1 1 0.08 0.75 I D [A] P tot [W] 0.06 0.5 0.04 0.25 0.02 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 103 20 µs limited by on-state resistance 100 µs 102 0.5 -1 10 1 ms I D [A] Z thJA [K/W] 0.2 1000 ms 0.1 101 0.05 0.02 0.01 100 DC single pulse 10-3 10-1 1 10 100 1000 V DS [V] Rev. 1.21 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] page 4 2005-02-25 BSS225 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.3 40 10 V 2.6 V 3V 3.2 V 3.6 V 3.8 V 4V 5V 38 0.25 4V 5V 36 10 V 34 3.8 V 0.15 R DS(on) [Ω] I D [A] 0.2 3.6 V 0.1 0.05 32 30 28 3.2 V 26 3V 24 22 2.6 V 0 20 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 V DS [V] 0.3 0.4 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.3 0.3 0.25 0.2 I D [A] g fs [S] 0.2 0.1 0.15 0.1 0.05 0 0 0 1 2 3 4 Rev. 1.21 0.00 0.10 0.20 0.30 I D [A] V GS [V] page 5 2005-02-25 BSS225 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=94 µA parameter: I D 130 2.8 120 2.4 110 98 % 100 2 80 V GS(th) [V] R DS(on) [Ω] 90 70 60 98 % 50 40 typ 1.6 2% 1.2 0.8 30 typ 20 0.4 10 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 100 150 °C 25 °C 150 °C, 98% 102 10-1 25 °C, 98% I F [A] C [pF] Ciss 101 10-2 Coss Crss 100 10-3 0 10 20 30 40 50 0.4 0.8 1.2 1.6 2 2.4 2.8 V SD [V] V DS [V] Rev. 1.21 0 page 6 2005-02-25 BSS225 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 700 12 680 300 V 10 660 640 V BR(DSS) [V] V GS [V] 8 480 V 120 V 6 4 620 600 580 560 540 2 520 500 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Q gate [nC] Rev. 1.21 -60 -20 20 60 100 140 T j [°C] page 7 2005-02-25 BSS225 Package Outline: Footprint: Packaging: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for 0 hour lifetime, if no suitable external protection is applied. Rev. 1.21 page 8 2005-02-25 BSS225 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.21 page 9 2005-02-25