NXP BC369-25 Pnp medium power transistor; Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC369
PNP medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Nov 20
2004 Nov 05
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
FEATURES
QUICK REFERENCE DATA
• High current
SYMBOL
• Two current gain selections.
VCEO
collector-emitter
voltage
−
−20
V
APPLICATIONS
IC
collector current (DC)
−
−1
A
• Linear voltage regulators
ICM
peak collector current
−
−2
A
• High side switches
hFE
DC current gain
PARAMETER
MIN. MAX. UNIT
• Supply line switches
BC369
85
375
• MOSFET drivers
BC369-16
100
250
• Audio pre-amplifiers.
BC369-25
160
375
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning”) for package details.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
PHILIPS
EIAJ
BC369
SOT54
SC-43A
C369
BC369-16
SOT54
SC-43A
C36916
BC369-25
SOT54
SC-43A
C36925
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
BC369
handbook, halfpage1
2
2
3
1
MAM285
DESCRIPTION
1
base
2
collector
3
emitter
3
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC369
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
BC369-16
BC369-25
2004 Nov 05
2
VERSION
SOT54
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−32
V
VCEO
collector-emitter voltage
open base
−
−20
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
830
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; notes 1 and 2
Notes
1. Refer to SOT54 (SC-43A) standard mounting conditions.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54.
MLE301
1
handbook, halfpage
Ptot
(W)
0.8
0.6
0.4
0.2
0
−65
Fig.1
−5
55
175
115
Tamb (°C)
Power derating curve for standard PCB
footprint.
2004 Nov 05
3
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITIONS
Tamb ≤ 25 °C; notes 1 and 2
thermal resistance from junction to ambient
VALUE
UNIT
150
K/W
Notes
1. Refer to SOT54 (SC-43A) standard mounting conditions.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54.
MLE302
103
handbook, full pagewidth
Rth(j-a)
(K/W)
(1)
(2)
(3)
(4)
102
(5)
(6)
10
(7)
(8)
(9)
δ=
P
(10)
1
tp
T
t
tp
T
10−1
10−5
10−4
10−3
10−2
10−1
1
(1) δ = 1.0.
(3) δ = 0.5.
(5) δ = 0.2.
(7) δ = 0.05.
(9) δ = 0.01.
(2) δ = 0.75.
(4) δ = 0.03.
(6) δ = 0.1.
(8) δ = 0.02.
(10) δ = 0.0.
Fig.2
10
102
tp (s)
103
Transient thermal resistance from junction to ambient as a function of pulse time for standard PCB
footprint.
2004 Nov 05
4
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
BC369
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCB = −25 V; IE = 0 A
−
−
−100
nA
VCB = −25 V; IE = 0 A; Tj = 150 °C
−
−
−10
μA
VEB = −5 V; IC = 0 A
−
−
−100
nA
VCE = −10 V; IC = −5 mA
50
−
−
VCE = −1 V; IC = −500 mA
85
−
375
VCE = −1 V; IC = −1 A
60
−
−
BC369-16
VCE = −1 V; IC = −500 mA
100
−
250
BC369-25
VCE = −1 V; IC = −500 mA
160
−
375
VCEsat
collector-emitter saturation voltage IC = −1 A; IB = −100 mA
VBE
base-emitter voltage
−
−
−500
mV
VCE = −10 V; IC = −5 mA
−
−
−700
mV
VCE = −1 V; IC = −1 A
−
−
−1
V
−
28
−
pF
140
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
fT
transition frequency
VCE = −5 V; IC = −50 mA; f = 100 MHz 40
2004 Nov 05
5
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
MLE297
−2.4
C
(A)
−2.0
MLE294
−1000
VBE
(mV)
handbook,
halfpage
I
handbook, halfpage
(1)
(2)
−800
(3)
−1.6
(4)
−600
(5)
(6)
−1.2
(7)
−400
(8)
−0.8
(9)
−0.4
0
−200
(10)
−1
0
−2
−3
−4
0
−10−1
−5
VCE (V)
−1
BC369-16.
BC369-16.
Tamb = 25 °C.
VCE = −1 V.
(1) IB = −18 mA.
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
(5) IB = −10.8 mA.
Fig.3
−102
−103
−104
IC (mA)
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
(9) IB = −3.6 mA.
(10) IB = −1.8 mA.
Collector current as a function of
collector-emitter voltage; typical values.
2004 Nov 05
−10
Fig.4
6
Base-emitter voltage as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
MLE299
103 halfpage
handbook,
MLE300
−103
handbook, halfpage
VCEsat
hFE
(mV)
−102
−10
102
−10−1
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
BC369-16.
BC369-16.
VCE = −1 V.
IC/IB = 10.
Fig.5
Fig.6
DC current gain as a function of collector
current; typical values.
2004 Nov 05
7
−1
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
MLE293
−2.4
C
(A)
−2.0
(1)
−1000
VBE
(mV)
(2)
−800
handbook,
I halfpage
MLE294
handbook, halfpage
(3)
(4)
−1.6
(5)
−600
(6)
−1.2
(7)
−400
(8)
−0.8
(9)
−0.4
−200
(10)
0
−1
0
−2
−3
−4
0
−10−1
−5
VCE (V)
BC369-25.
IB = −12 mA.
IB = −10.8 mA.
IB = −9.6 mA.
IB = −8.4 mA.
IB = −7.2 mA.
Fig.7
−102
−103
−104
IC (mA)
VCE = −1 V.
(6) IB = −6.0 mA.
(7) IB = −4.8 mA.
(8) IB = −3.6 mA.
(9) IB = −2.4 mA.
(10) IB = −1.2 mA.
Collector current as a function of
collector-emitter voltage; typical values.
2004 Nov 05
−10
BC369-25.
Tamb = 25 °C.
(1)
(2)
(3)
(4)
(5)
−1
Fig.8
8
Base-emitter voltage as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
MLE295
103 halfpage
handbook,
MLE296
−103
handbook, halfpage
VCEsat
hFE
(mV)
−102
−10
102
−10−1
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
BC369-25.
BC369-25.
VCE = −1 V.
IC/IB = 10.
Fig.9
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
DC current gain as a function of collector
current; typical values.
2004 Nov 05
9
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 05
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
10
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC369
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 05
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/05/pp12
Date of release: 2004 Nov 05
Document order number: 9397 750 13565