AMMC-6425 18-28 GHz 1W Power Amplifier MMIC Data Sheet Description Features The AMMC-6425 is an MMIC power amplifier designed for use in wireless transmitters that operate within an 18GHz to 28GHz range. At 28GHz, it provides 30dBm of output power (P1dB) and 24dB of small-signal gain from a small easy-to-use device. This MMIC is optimized for linear operation with an output third order intercept point (OIP3) of 38dBm. The device has input and output matching circuitry for use in 50Ω environments. The AMMC-6425 also has integrated, temperature compensated, RF power detection circuitry that enables power detection of 0.3V/ Watt at 28GHz. High Gain: 24dB 1-watt output power (P-1) 50 Ω match on input and output Integrated RF power detector ESD protection (50V MM, and 250V HBM) Specifications (Vd=5V, Idsq=0.65A) Frequency range 18 to 28 GHz Small signal Gain of 24dB Output power @P-1 of 29dBm (Typ.) Input/Output return-loss of -13dB/-13dB Applications Microwave Radio systems Satellite VSAT, Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax) WLL and MMDS loops Commercial grade military Chip Size: 2500 x 1870μm (100 x 74ils) Chip Size Tolerance: ± 10μm (±0.4 mils) Chip Thickness: 100 ± 10μm (4 ± 0.4 mils) Pad Dimensions: 100 x 100μm (4 x 4 ±0.4 )mils) RoHS - Exemption Please refer to Hazardous substances table on page 9 Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 50V ESD Human Body Model (Class 0): 250V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Ratings [1,2,3,4, 5] Symbol Parameters Unit Max Notes Vd Positive Supply Voltage[2] V 6 2/ Vg Gate Supply Voltage V -3 to 0.5 PD Power Dissipation[2,3] W 5.5 2/3/ Pin CW Input Power[2] dBm 23 2/ Tch Operating Channel Temp.[4,5] C +150 4/5/ Tstg Storage Case Temp. C -65 to +155 Maximum Assembly Temp (30 sec max) +320 Tmax C Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. When operate at this condition with a base plate temperature of 85C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET 5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels DC Specifications/ Physical Properties [1] Symbol Parameters and Test Conditions Units Id Drain Supply Current(Vd=5 V, Vg set for Id Typical) mA 650 Vg Gate Supply Operating Voltage(Id(Q) = 650 (mA)) V -1.0 Rjc Thermal Resistance[1](Channel-to-Backside) C/W C 17.8 Typical Channel Temperature Tch 132 Note: 1. Assume AuSn soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power consumption rises to 5.5W with 1.57W RF power delivered to load. Power dissipation is 3.93W and the temperature rise in the channel is 57 °C. In this condition, the base plate temperature must be remained below 93 °C to maintain maximum operating channel temperature below 150°C. RF Specifications [1,2, 3] (TA= 25C, Vd=5, Id(Q)=650 mA, Zo=50 Symbol Parameters and Test Conditions Units Minimum Freq Operational Frequency GHz 18 Gain Small-signal Gain [3, 4] dB 22 24 dBm 27.5 29 [3] Gain Compression P-1dB Output Power at 1dB OIP3 Output Third Order Intercept Point dBm 38 RLin Input Return Loss dB 13 RLout Output Return Loss dB 13 Isolation Reverse Isolation dB 50 Notes: 1. Small/Large -signal data measured in on-wafer environment at TA = 25C. 2. This die part performance is verified by a functional test correlated to actual performance at one or more frequencies 3. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz 4. The Gain and P1dB tested at 23GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB. 2 Maximum 28 Typical Performances (Data obtained from on-wafer environment. TA = 25C, Vd =5 V, Id(q) =650 mA, Zin = Zout =50 ) -40 0 -5 20 -10 15 S21[dB] S12[dB] 10 Return Loss [dB] 25 S12 [dB] S21[dB] 30 5 0 S11[dB] S22[dB] -15 -20 -25 15 20 25 Frequency [GHz] 30 35 -60 -30 Figure 1. AMMC-6425 Typical Gain and Reverse Isolation 15 20 25 Frequency [GHz] 30 35 Figure 2. AMMC-6425 Typical Return Loss (Input and Output) 15 35 Noise Figure [dB] 25 20 18 20 22 24 Frequency [GHz] 26 28 0 16 30 Figure 3. AMMC-6425 Typical Output Power (P-1) and PAE at 1dB gain compression 18 20 22 24 Frequency [GHz] Pout [dBm], PAE [%] 45 40 35 30 18 20 Figure 5. AMMC-6425 Typical IP3 3 22 Freq [GHz] 24 26 28 35 1200 30 1000 25 800 20 600 15 400 10 30 28 0 -20 200 Pout PAE Id 5 16 26 Figure 4. AMMC-6425 Typical Noise Figure 50 OIP3 [dBm] 5 P-1 PAE 15 10 16 10 Id [mA] P-1 [dBm], PAE [%] 30 0 -200 -15 -10 -5 0 Pin [dBm] 5 10 15 Figure 6. AMMC-6425 Typical Output Power, PAE, and Total Drain Current versus Input Power at 25GHz Typical over temperature dependencies (TA = 25C, Vd =5 V, Id(q) = 650 mA, Zin = Zout = 50 ) 0.000 0.000 S11_20 S22_20 -5.000 S11_-40 S11_85 -10.000 S22[dB] S11[dB] -5.000 -15.000 15 10 20 25 Frequency[GHz] 30 35 -15.000 -25.000 30 34 25 32 P-1 [dBm] S21[dB] 20 25 Frequency[GHz] 15 30 35 30 20 15 S21_20 10 5 15 28 26 S21_-40 24 S21_85 22 20 25 Frequency[GHz] Figure 9. AMMC-6425 Typical Gain over temperature 4 10 Figure 8. AMMC-6425 Typical S22 over temperature Figure 7. AMMC-6425 Typical S11 over temperature 0 10 S22_85 -10.000 -20.000 -20.000 -25.000 S22_-40 30 35 20 P-1_85deg P-1_20deg P-1_-40deg 16 18 20 22 24 Frequency [GHz] Figure 10. AMMC-6425 Typical P-1 over temperature 26 28 30 Typical Scattering Parameters [1] (TA = 25C, Vd =5 V, ID = 650 mA, Zin = Zout = 50 ) Freq S11 S21 S12 S22 [GHz] dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 -0.18 -0.50 -0.89 -1.35 -1.86 -2.44 -3.06 -3.82 -4.71 -5.84 -7.34 -9.18 -11.85 -14.61 -17.29 -18.59 -18.18 -19.99 -25.56 -28.70 -24.85 -21.69 -22.36 -21.48 -23.59 -24.27 -29.23 -26.07 -22.54 -23.20 -23.96 -28.29 -25.07 -22.55 -42.73 -23.68 -14.11 -11.27 -8.96 -8.29 -10.18 -13.20 -19.84 -15.75 -17.20 0.98 0.94 0.90 0.86 0.81 0.76 0.70 0.64 0.58 0.51 0.43 0.35 0.26 0.19 0.14 0.12 0.12 0.10 0.05 0.04 0.06 0.08 0.08 0.08 0.07 0.06 0.03 0.05 0.07 0.07 0.06 0.04 0.06 0.07 0.01 0.07 0.20 0.27 0.36 0.39 0.31 0.22 0.10 0.16 0.14 -31.00 -60.57 -88.63 -115.64 -140.94 -165.06 171.33 148.56 125.47 102.90 79.40 57.15 36.72 18.79 11.16 -3.90 -21.68 -62.71 -111.19 -72.75 -112.17 -133.66 -172.96 163.66 146.36 126.41 165.25 150.75 140.36 133.08 97.50 142.55 123.16 102.78 167.89 -128.70 179.93 157.39 117.64 91.80 51.89 38.89 36.35 50.47 60.92 -50.91 -46.71 -45.77 -43.43 -47.59 -52.20 -62.73 -61.78 -64.62 -54.25 -42.17 -27.52 -14.09 -1.42 11.13 19.39 22.36 25.12 26.50 26.07 25.60 25.28 24.93 24.49 24.34 24.61 24.62 22.38 18.42 14.45 10.68 6.86 2.75 -1.52 -5.81 -10.14 -14.68 -19.33 -24.11 -29.14 -33.41 -40.03 -44.99 -48.14 -48.85 0.00 0.00 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.04 0.20 0.85 3.60 9.32 13.12 18.04 21.14 20.11 19.06 18.36 17.63 16.76 16.49 17.01 17.03 13.15 8.33 5.28 3.42 2.20 1.37 0.84 0.51 0.31 0.18 0.11 0.06 0.03 0.02 0.01 0.01 0.00 0.00 172.26 -119.81 133.49 80.97 -36.53 -83.32 -112.45 -159.19 102.00 12.77 -16.36 -49.47 -100.12 -162.63 114.96 0.47 -97.26 174.40 83.81 2.80 -69.33 -138.46 153.57 87.35 21.96 -46.70 -125.11 150.42 75.77 9.65 -53.32 -115.03 -174.97 127.51 72.35 18.88 -33.49 -83.71 -139.37 163.76 105.70 47.72 -12.88 -47.19 -78.91 -80.52 -74.86 -74.75 -72.03 -74.43 -78.78 -70.47 -70.96 -66.03 -63.10 -63.11 -64.29 -66.04 -66.27 -62.22 -57.32 -56.62 -58.17 -59.81 -65.66 -62.29 -61.95 -63.22 -65.75 -63.00 -61.05 -60.13 -63.02 -65.92 -74.10 -73.92 -79.54 -66.14 -65.92 -74.96 -70.18 -66.20 -60.89 -57.08 -55.47 -54.94 -54.39 -53.97 -55.93 -61.91 9.42E-05 1.81E-04 1.83E-04 2.50E-04 1.90E-04 1.15E-04 3.00E-04 2.83E-04 5.00E-04 7.00E-04 6.99E-04 6.10E-04 4.99E-04 4.86E-04 7.74E-04 1.36E-03 1.48E-03 1.23E-03 1.02E-03 5.21E-04 7.68E-04 7.99E-04 6.90E-04 5.16E-04 7.08E-04 8.87E-04 9.85E-04 7.07E-04 5.06E-04 1.97E-04 2.01E-04 1.05E-04 4.93E-04 5.06E-04 1.79E-04 3.10E-04 4.90E-04 9.03E-04 1.40E-03 1.69E-03 1.79E-03 1.91E-03 2.00E-03 1.60E-03 8.03E-04 161.39 -20.97 -151.39 101.75 -61.03 -162.35 -177.29 142.99 137.46 110.85 83.54 51.91 51.77 61.73 80.54 43.30 5.66 -22.91 -58.29 -58.26 -51.21 -78.62 -96.75 -142.75 -167.89 107.89 45.28 -23.51 -89.51 119.51 84.14 72.59 96.41 80.40 -176.00 98.04 177.04 118.94 94.41 64.07 33.20 -9.11 -23.02 -51.98 -77.54 -0.14 -0.42 -0.66 -1.10 -1.44 -1.81 -2.29 -2.84 -3.43 -4.14 -5.08 -6.40 -8.57 -11.83 -17.73 -20.07 -23.13 -35.25 -32.08 -24.22 -20.28 -18.47 -17.01 -17.42 -18.48 -21.50 -27.76 -19.90 -18.54 -20.64 -19.81 -23.10 -20.62 -20.14 -21.03 -19.75 -20.77 -22.27 -22.14 -27.90 -24.29 -25.85 -32.40 -18.76 -20.68 0.98 0.95 0.93 0.88 0.85 0.81 0.77 0.72 0.67 0.62 0.56 0.48 0.37 0.26 0.13 0.10 0.07 0.02 0.02 0.06 0.10 0.12 0.14 0.13 0.12 0.08 0.04 0.10 0.12 0.09 0.10 0.07 0.09 0.10 0.09 0.10 0.09 0.08 0.08 0.04 0.06 0.05 0.02 0.12 0.09 -27.36 -53.39 -78.93 -103.74 -125.74 -149.44 -172.28 165.52 142.63 118.72 91.98 62.37 26.29 -19.97 -96.22 114.52 2.66 -81.56 -4.28 -64.07 -120.87 -148.19 173.91 152.07 122.77 104.97 -178.20 147.42 127.22 111.91 105.34 108.32 90.40 97.27 84.93 80.65 92.20 60.59 69.96 56.87 51.59 131.67 120.99 127.25 126.54 Note: 1. Data obtained from on-wafer measurement. 5 Application and Usage Biasing and Operation Assembly Techniques The recommended quiescent DC bias condition for optimum efficiency, performance, and reliability is Vd=5 volts with Vg set for Id=650mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg and /or Vg to the pinch-off voltage Vp. The chip should be attached directly to the ground plane using either a flux less AuSn solder perform or electrically conductive epoxy[1]. For conductive epoxy, the amount should be just enough to provide a thin fillet around the bottom perimeter of the die. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. An optional output power detector network is also provided. The differential voltage between the Det-Ref and Det-Out pads can be correlated with the RF power emerging from the RF output port. The detected voltage is given by : V = (Vref - Vdet) - Vofs where Vref is the voltage at the DET_R port, Vdet is a voltage at the DET_O port, and Vofs is the zero-input-power offset voltage. There are three methods to calculate : Vofs 1) Vofs can be measured before each detector measurement (by removing or switching off the power source and measuring Vref - Vdet). This method gives an error due to temperature drift of less than 0.01dB/50C. 2) Vofs can be measured at a single reference temperature. The drift error will be less than 0.25dB. 3) Vofs can either be characterized over temprature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. This method gives an error close to the method #1. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wired are needed since ground connections are made with plated through-holes to the backside of the device. 6 Thermo-sonic wedge bonding is the preferred method for wire attachment to the bond pads. The RF connections should be kept as short as possible to minimize inductance. Gold mesh[2] or double-bonding with 0.7mil gold wire is recommended. Mesh can be attached using a 2mil round tracking tool and a too force of approximately 22grams with an ultrasonic power of roughly 55dB for a duration of 76±8mS. A guided wedge at an ultrasonic power level of 64dB can be used for the 0.7mil wire. The recommended wire bonding stage temperature is 150±2˚C. The chip is 100μm thick and should be handled with care. This MMIC has exposed air bridges on the top surface. Handle at the edges or with a custom collet (do not pick up die with vacuum on die center). This MMIC is also static sensitive and ESD handling precautions should be taken. For more detailed information, see Avago Application Note 54 “GaAs MMIC ESD, Die Attach and Bonding Guide lines.” Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824 Figure 11. AMMC-6425 Schematic Figure 12. AMMC6425 Die dimension 7 Notes 1. 1uF capacitors not shown on gate and drain lines are required. 2. Vd connection is required on both sides. 3. Vg can be biased from either side. Figure 13. AMMC-6425 Assembly examples 1 0.50 0.1 0.30 0.20 0.01 (DET_R)-(DET_O) [V]] (DET_R)-(DET_O) [V] 0.40 0.10 0.00 0.001 0 5 10 15 20 RF Output Power [dBm] 25 Figure 14. Typical Detector Voltage and Output Power, Freq=25GHz 8 30 Ordering Information: AMMC-6425-W10 = 10 devices per tray AMMC-6425-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies Limited. All rights reserved. AV02-0884EN - July 25, 2012