CQD-4M CQD-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON TRIACS 4.0 AMP, 600 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M and CQD-4N are epoxy molded silicon TRIACs designed for full wave AC control applications featuring gate triggering in all four quadrants. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Operating Junction Temperature Storage Temperature CQD-4M 600 4.0 ITSM I2t PGM PG (AV) IGM TJ Tstg CQD-4N 800 UNITS V A 40 A 2.4 A2s 3.0 W 0.2 W 1.2 A -40 to +125 °C -40 to +150 °C ELECTRICAL SYMBOL IDRM IDRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C IGT IGT VD=12V, QUAD I, II, III VD=12V, QUAD IV IH VGT VTM ITM=6.0A, tp=380μs dv/dt VD=2 /3 VDRM, TC=125°C MAX 10 UNITS μA 200 μA 2.5 5.0 mA 5.4 9.0 mA RGK=1KΩ 1.6 5.0 mA VD=12V, QUAD I, II, III, IV 0.95 1.75 V 1.25 1.75 11 V V/μs R2 (21-January 2013) CQD-4M CQD-4N SURFACE MOUNT SILICON TRIACS 4.0 AMP, 600 THRU 800 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R2 (21-January 2013) w w w. c e n t r a l s e m i . c o m