AP4924M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low On-resistance ▼ Fast Switching D2 D1 D1 BVDSS 20V RDS(ON) 35mΩ ID 6A G2 S2 SO-8 S1 G1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G2 G1 S1 S2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ± 12 V 3 6 A 3 4.8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 35 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 20020502 AP4924M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj RDS(ON) 20 - - V Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃ Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 35 mΩ VGS=2.5V, ID=5.2A - - 50 mΩ VDS=VGS, ID=250uA 0.5 - 1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=10V, ID=6A - 18.5 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±12V - - ID=6A - 9 - nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. Typ. Max. Units 2 ±100 nA Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.2 - nC VDS=10V - 6.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 14 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=4.5V - 20 - ns tf Fall Time RD=10Ω - 15 - ns Ciss Input Capacitance VGS=0V - 300 - pF Coss Output Capacitance VDS=8V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Min. Typ. Max. Units VD=VG=0V , VS=1.2V - - 1.67 A Tj=25℃, IS=1.7A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. AP4924M 25 25 o T C =25 C 20 2.5V 15 10 V GS =2.0V 5 2.5V 15 10 V GS =2.0V 5 0 0 0 1 2 3 4 5 6 0 V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 45 I D =6A T C =25 ℃ I D =6A V GS =4.5V 1.6 Normalized RDS(ON) 40 RDS(ON) (mΩ ) 4.5V 3.5V 3.0V 20 ID , Drain Current (A) ID , Drain Current (A) T C =150 o C 4.5V 3.5V 3.0V 35 30 1.4 1.2 1.0 25 0.8 0.6 20 2 3 4 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 5 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP4924M 3 8 7 6 ID , Drain Current (A) 2 PD (W) 5 4 3 1 2 1 0 0 25 50 75 100 125 0 150 50 100 150 T c ,Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Normalized Thermal Response (Rthja) Duty Factor = 0.5 10 1ms ID (A) 10ms 1 100ms 0.1 0.1 0.05 0.02 0.01 P DM 0.01 1s 0.1 10s DC T C =25 o C Single Pulse 0.2 t T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4924M I D =6A V DS =10V 5 Ciss 4 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 6 3 Coss 100 Crss 2 1 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1.5 100.00 10.00 1 T j =25 o C VGS(th) (V) IS(A) T j =150 o C 1.00 0.5 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 0 50 100 T j ,Junction Temperature ( o C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP4924M VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% S + VGS VGS 4..5V - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS D 4.5V 0.5 x RATED VDS G S QG TO THE OSCILLOSCOPE QGS QGD VGS + 1~ 3 mA I G I D Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q