Rohm DTA144TUA -100ma / -50v digital transistors (with built-in resistor) Datasheet

-100mA / -50V Digital transistors
(with built-in resistor)
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
 Applications
Inverter, Interface, Driver
 Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
 Dimensions (Unit : mm)
DTA144TM
DTA144TE
0.7
1.6
0.55
0.3
0.2
(3)
0.8
1.2
0.8
(2)
0.4 0.4
0.2
(1)(2)
0.13
(1) Base
(2) Emitter
(3) Collector
0.8
ROHM : VMT3
2.0
ROHM : EMT3
1.1
0.8
(3)
1.6
2.8
2.1
1.25
0.15
1.3
0.1Min.
(1)
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
2.9
0.4
(3)
(2)
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 96
0.7
0.2
0.15
1.0
DTA144TKA
0.9
0.3
0.2
0.5 0.5
Abbreviated symbol : 96
DTA144TUA
(1)
0.2
0.5
(2)
(1) Emitter
(2) Base
(3) Collector
(1)
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
0.15
1.9
0.3Min.
0.22
0.1Min.
(3)
1.6
1.2
0.32
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 96
Abbreviated symbol : 96
 Inner circuit
C
B
R1
E
B : Base
C : Collector
E : Emitter
R1=47kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Data Sheet
 Packaging specifications
Package
VMT3
EMT3
UMT3
SMT3
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
Packaging type
Part No.
DTA144TM
DTA144TE
−
DTA144TUA
−
−
DTA144TKA
−
−
−
−
 Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTA144TM DTA144TE DTA144TUA DTA144TKA
Collector-base voltage
VCBO
−50
Collector-emitter voltage
VCEO
−50
Emitter-base voltage
VEBO
−5
Collector current
IC
−100
Collector power dissipation
Pc
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
V
V
mA
150
mW
200
 Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50μA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE=−50μA
Collector cutoff current
ICBO
−
−
−0.5
μA
VCB=−50V
Emitter cutoff current
IEBO
−
−
−0.5
μA
VEB=−4V
Parameter
Conditions
VCE(sat)
−
−
−0.3
V
IC/IB=−5mA/−0.5mA
DC current transfer ratio
hFE
100
250
600
−
VCE=−5V, IC=−1mA
Input resistance
R1
32.9
47
61.1
kΩ
Transition frequency
fT ∗
−
250
−
MHz
Collector-emitter saturation voltage
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
 Electrical characteristic curves
−1
lC/lB=10
−500m
−200m
−100m
Ta=100°C
25°C
−40°C
−50m
−20m
−10m
−5m
−2m
−1m
−10μ −20μ −50μ −100μ −200μ −500μ −1m −2m
−5m −10m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.collector
current
Fig.2 Collector-emitter saturation
voltage vs.collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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