BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch(mm) • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.054(1.35) 0.045(1.15) 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) • ESD Protected • /HDGIUHHLQFRPSO\ZLWK(85R+6(&GLUHFWLYHV *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. MECHANICAL DATA • Case: SOT-323 Package 0.016(0.40) 0.008(0.20) • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 38W • Apporx. Weight: 0.000 ounceV, 0.005 gramV Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l L i mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 50 V Ga te - S o ur c e Vo lta g e V GS +20 V ID 300 mA ID M 2000 mA PD 350 210 mW T J ,T S TG - 5 5 to + 1 5 0 R θJ A 357 C o nti nuo us D r a i n C ur r e nt P uls e d D r a i n C ur r e nt 1) TA = 2 5 OC TA = 7 5 OC Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e M a xi m um P o we r D i s s i p a ti o n Junction-to Ambient Thermal Resistance(PCB mounted)2 O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE November 09,2010-REV.01 PAGE . 1 BSS138W ELECTRICALCHARACTERISTICS P a r a m e te r S ym b o l Te s t C o nd i ti o n M i n. Typ . M a x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V , ID =1 0 uA 50 - - V G a te Thr e s ho ld Vo lta g e V GS ( th) V D S =V GS , ID =2 5 0 uA 0 .8 - 1 .5 V R D S ( o n) VGS=2.5V , I D=100mA - 2 .8 6 .0 R D S ( o n) VGS=4.5V , I D=200mA - 1 .8 4 .0 R D S ( o n) VGS=10V , I D=500mA - 1.6 3.0 ID S S VDS=50V , VGS=0V - - 1 μA Gate Body Leakage I GS S V GS =+ 2 0 V , V D S =0 V - - +1 0 μA Forward Transconductance g fS V D S =1 0 V , ID =2 5 0 m A 100 - - mS To ta l Ga te C ha r g e Qg V D S =2 5 V, ID =2 5 0 m A VGS=4.5V - - 1 .0 nC Tur n- On Ti m e ton - - 40 Tur n- Off Ti m e t o ff - - 150 Inp ut C a p a c i ta nc e C i ss - - 50 O utp ut C a p a c i ta nc e C oss - - 10 Re ve r s e Tra ns fe r C a p a c i ta nc e C rss - - 5 S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze r o Ga te Vo lta g e D ra i n C ur re nt Ω Dynamic VDD=30V , RL=100Ω ID=300mA , VGEN=10V RG=6Ω V D S =2 5 V , V GS =0 V f=1 .0 M H Z ns pF S o urc e - D r a i n D i o d e D i o d e F o rwa r d Vo lta g e C o nti nuo us D i o d e F o r wa r d C ur re nt P uls e D i o d e F o rwa r d C ur re nt V SD IS=250mA , VGS=0V - 0.82 1.2 V IS - - - 300 mA IS M - - - 2000 mA VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL VGS RL VOUT RG 1mA RG November 09,2010-REV.01 PAGE . 2 BSS138W O Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1 V GS=10V~4.0V I D-Drain-to-Source Current (A) I D-Drain-to-Source Current (A) 1.2 1.0 0.8 3.0V 0.6 0.4 0.2 0 0 1 2 3 4 VDS =10V 0.8 0.6 0.4 o 0 0 5 V DS- Drain-to-Source Voltage (V) 3 4 5 6 5 R DS(ON) - On Resistance ( W ) R DS(ON) - On Resistance ( W ) 2 FIG.2- Transfer Characteristic 5 4 3 V GS=4.5V 2 V GS=10V 1 4 3 I D =200mA 2 0.2 0.4 0.6 0.8 1 1.2 FIG.3- On Resistance vs Drain Current 1.8 1.6 I D =500mA 1 0 0 I D - Drain Current (A) R DS(ON) -On-Resistance(Normalized) 1 V GS- Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 0 TJ = 25 C 0.2 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) FIG.4- On Resistance vs Gate to Source Voltage VGS =10 V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( OC) FIG.5- On Resistance vs Junction Temperature November 09,2010-REV.01 PAGE . 3 BSS138W 1 V GS - Gate-to-Source Voltage(V) 10 I D =250m A I S - Source Current (A) 8 6 4 2 0 V GS= 0V O T J = 125 C 0.1 O T J =-55 C 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0.2 Fig.6 - Gate Charge Waveform BV DSS - Breakdown Voltage(Normlized) I D = 250 m A 1.1 1.0 0.9 0.8 -25 0 25 50 75 0.6 0.8 1 1.2 1.4 Fig.7 Source-Drain Diode Forward Voltage 1.2 0.7 -50 0.4 V SD - Source-to-Drain Voltage (V) Q g - Gate Charge (nC) V th - G-S Threshold Voltage(Normalized) O T J =25 C 100 125 150 O T J - Junction Temperature ( C) 1.15 I D = 250 m A 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( OC) Fig.8 - Threshold Voltage vs Temperature 50 1.2 Fig.9 - Breakdown Voltage vs Junction Temperature f = 1MHz V GS = 0V C - Capacitance (pF) 40 Ciss 30 20 Coss 10 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.10 - Capacitance vs Drain to Source Voltage November 09,2010-REV.01 PAGE . 4 BSS138W MOUNTING PAD LAYOUT SOT-323 Unit：inch(mm) 0.073 (1.85) 0.034 (0.86) 0.026 (0.66) 0.026 (0.65) 0.026 (0.65) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel November 09,2010-REV.01 PAGE . 5 BSS138W Part No_packing code_Version BSS138W_R1_00001 BSS138W_R2_00001 For example : RB500V-40_R2_00001 Serial number Version code means HF Packing size code means 13" Packing type means T/R Part No. Packing Code XX Packing type Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING November 09,2010-REV.01 Version Code XXXXX 1st Code Packing size code A N/A 0 HF 0 serial number R 7" 1 RoHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) 2nd Code HF or RoHS 1st Code 2nd~5th Code U D PAGE . 6 BSS138W Disclaimer z Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. z Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. z Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. z Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. z Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. z The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. November 09,2010-REV.01 PAGE . 7