FDMS7670AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 mΩ Features General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 3.0 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 3.2 mΩ at VGS = 7 V, ID = 19 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C MOSFET dv/dt EAS Single Pulse Avalanche Energy PD TJ, TSTG Units V ±20 V 42 113 (Note 1a) -Pulsed dv/dt Ratings 30 22 A 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 1.8 V/ns 98 mJ 65 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.9 (Note 1a) 125 °C/W Package Marking and Ordering Information Device Marking FDMS7670AS Device FDMS7670AS ©2009 Fairchild Semiconductor Corporation FDMS7670AS Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM September 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 14 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 VGS = 10 V, ID = 21 A 2.4 3.0 VGS = 7 V, ID = 19 A 2.5 3.2 VGS = 4.5 V, ID = 17 A 3.0 3.5 VGS = 10 V, ID = 21 A, TJ = 125 °C 3.0 3.8 VDS = 5 V, ID = 21 A 300 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3175 4225 pF 1175 1565 pF 110 165 pF 1.3 2.6 Ω 14 25 ns 6 12 ns 35 56 ns 5 10 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 47 66 nC Qg Total Gate Charge 31 nC Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A 22 Qgs 8.5 nC Qgd Gate to Drain “Miller” Charge 4.9 nC VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.43 0.7 VGS = 0 V, IS = 21 A (Note 2) 0.75 1.2 35 56 ns 41 67 nC IF = 21 A, di/dt = 300 A/ µs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7670AS Rev.C 2 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TA = 25 °C unless otherwise noted 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.5 VGS = 3.5 V ID, DRAIN CURRENT (A) 120 VGS = 10 V VGS = 4.5 V 90 VGS = 4 V VGS = 3 V 60 30 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VGS = 3 V 2.5 VGS = 3.5 V 2.0 VGS = 4 V 1.5 VGS = 4.5 V 1.0 VGS = 10 V 0.5 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 90 TJ = 125 oC 60 = 25 oC 30 TJ = -55 oC 1.5 2.0 2.5 3.0 3.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 8 6 TJ = 125 oC 4 2 TJ = 25 oC 2 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 1.0 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7670AS Rev.C 150 VGS, GATE TO SOURCE VOLTAGE (V) 150 TJ ID = 21 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 120 120 10 ID = 21 A VGS = 10 V -50 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3.0 3 1.2 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 8 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 2 Coss 1000 Crss 100 f = 1 MHz 0 VGS = 0 V 0 10 20 30 40 60 0.1 50 Figure 7. Gate Charge Characteristics 10 120 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 90 VGS = 4.5 V 60 30 o RθJC = 1.9 C/W Limited by Package 1 0.01 0.1 1 10 0 25 100 300 tAV, TIME IN AVALANCHE (ms) 200 100 P(PK), PEAK TRANSIENT POWER (W) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W 0.01 0.01 DC TA = 25 oC 0.1 1 10 100 200 150 VGS = 10 V 1000 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7670AS Rev.C 125 10000 10 ms 0.1 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1 ms THIS AREA IS LIMITED BY rDS(on) 75 o 100 µs 10 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 30 Figure 8. Capacitance vs Drain to Source Voltage 40 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Ciss ID = 21 A CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7670AS Rev.C 5 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7670AS. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/µs 10 5 0 -5 0 30 60 90 120 150 TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 14. FDMS7670AS SyncFET body diode reverse recovery characteristic FDMS7670AS Rev.C 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS7670AS N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout FDMS7670AS Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 FDMS7670AS Rev.C 8 www.fairchildsemi.com FDMS7670AS N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ FPS™ PowerTrench® The Power Franchise® Auto-SPM™ F-PFS™ PowerXS™ ® Build it Now™ FRFET® Programmable Active Droop™ SM ® Global Power Resource CorePLUS™ QFET TinyBoost™ Green FPS™ QS™ CorePOWER™ TinyBuck™ Green FPS™ e-Series™ Quiet Series™ CROSSVOLT™ TinyCalc™ Gmax™ RapidConfigure™ CTL™ TinyLogic® GTO™ Current Transfer Logic™ ® TINYOPTO™ IntelliMAX™ EcoSPARK ™ TinyPower™ ISOPLANAR™ EfficentMax™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ MegaBuck™ EZSWITCH™* SmartMax™ TinyWire™ ™* MICROCOUPLER™ SMART START™ TriFault Detect™ MicroFET™ SPM® TRUECURRENT™* MicroPak™ STEALTH™ ® MillerDrive™ SuperFET™ Fairchild® MotionMax™ SuperSOT™-3 Fairchild Semiconductor® Motion-SPM™ SuperSOT™-6 UHC® ® FACT Quiet Series™ Ultra FRFET™ OPTOLOGIC SuperSOT™-8 FACT® OPTOPLANAR® UniFET™ SupreMOS™ ® FAST® VCX™ SyncFET™ FastvCore™ VisualMax™ Sync-Lock™ FETBench™ XS™ ®* PDP SPM™ FlashWriter® * Power-SPM™