BCW70LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc Emitter−Base Voltage VEBO −5.0 Vdc IC −100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina H2 M G G 1 H2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BCW70LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1999 November, 2016 − Rev. 4 1 Publication Order Number: BCW70LT1/D BCW70LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit −45 − Vdc −50 − Vdc −5.0 − Vdc − − −100 −10 nAdc mAdc 215 500 − − −0.3 Vdc −0.6 −0.75 Vdc − 7.0 pF − 10 dB OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) V(BR)CEO Collector−Emitter Breakdown Voltage (IC = −100 mAdc, VEB = 0) V(BR)CES Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −20 Vdc, IE = 0) (VCB = −20 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −2.0 mAdc, VCE = −5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) VCE(sat) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) SMALL−SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = −10 Vdc, f = 1.0 MHz) Cobo Noise Figure (IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BCW70LT1G TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 mA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 mA 3.0 100 mA 300 mA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 mA 1.0 0.7 0.5 100 mA 30 mA 0.3 0.2 1.0 10 mA 0.1 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k 10 20 50 Figure 1. Noise Voltage 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) 5.0k 10k Figure 2. Noise Current NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = − 5.0 Vdc, TA = 25°C) 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 5.0 dB 10 1.0M 500k 500 700 1.0k 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 ƫ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance (Ohms) 5.0k 2.0k 1.0k 500 ƪ S 500 700 1.0k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband www.onsemi.com 3 BCW70LT1G 100 1.0 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 150 mA 40 100 mA 20 50 mA 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Collector Saturation Region θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 - 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 300 50 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 0.2 - 55°C to 25°C 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 30 tr 20 100 70 50 30 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 qVB for VBE Figure 9. Temperature Coefficients 500 200 25°C to 125°C *qVC for VCE(sat) 0 Figure 8. “On” Voltages 300 40 Figure 7. Collector Characteristics 1.4 0.2 250 mA 60 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0.1 IB = 400 mA 350 mA tf 20 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 Figure 10. Turn−On Time - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) Figure 11. Turn−Off Time www.onsemi.com 4 - 50 - 70 -100 BCW70LT1G 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V Cib C, CAPACITANCE (pF) 300 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TYPICAL DYNAMIC CHARACTERISTICS 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 12. Current−Gain — Bandwidth Product Figure 13. Capacitance 1.0 0.7 0.5 10 20 50 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 16 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100 Figure 14. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 14 by the steady state value RqJA. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 10-1 Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 10-2 The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. 100 -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) For more information, see AN−569. Figure 15. Typical Collector Leakage Current www.onsemi.com 5 BCW70LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. 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