CEP80N75/CEB80N75 CEF80N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A CEF80N75 75V 13mΩ 80A 10V e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S CEF SERIES TO-220F ID IDM a Maximum Power Dissipation @ TC = 25 C f PD - Derate above 25 C TO-220F 75 Units V ±20 V A 80 80 320 320 200 75 W e e A 1.3 0.5 W/ C Single Pulsed Avalanche Energy d EAS 880 880 mJ Single Pulsed Avalanche Current d IAS 45 45 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.75 2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 2. 2007.Feb http://www.cetsemi.com Details are subject to change without notice . 1 CEP80N75/CEB80N75 CEF80N75 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 75 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 13 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 40A Forward Transconductance gFS VDS = 15V, ID = 40A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 10 Dynamic Characteristics c VDS = 25V, VGS = 0V, f = 1.0 MHz 45 S 3550 pF 580 pF 40 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7Ω 24 48 ns 5 10 ns 61 122 ns Turn-Off Fall Time tf 18 36 ns Total Gate Charge Qg 79.3 105.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 60V, ID = 75A, VGS = 10V 20.6 nC 25.9 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS g b VSD VGS = 0V, IS = 75A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 51A . 2 75 A 1.5 V CEP80N75/CEB80N75 CEF80N75 120 VGS=10,9,8,7V 40 ID, Drain Current (A) ID, Drain Current (A) 50 VGS=6V 30 20 VGS=5V 10 100 75 50 25 C 25 -55 C TJ=125 C 0 0 0.5 1 1.5 0 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 3000 2000 Coss 1000 Crss 0 5 10 15 20 25 5 2.6 2.2 ID=40A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics 4000 1.2 2 VGS, Gate-to-Source Voltage (V) 5000 1.3 1 VDS, Drain-to-Source Voltage (V) 6000 0 0 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=60V ID=75A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP80N75/CEB80N75 CEF80N75 6 4 2 0 0 15 30 45 60 75 RDS(ON)Limit 10 2 10 1 10 90 3 100ms 1ms 10ms DC TC=25 C TJ=175 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 Single Pulse 10 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2