SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 ✪ BSS82B BSS82C PARTMARKING DETAILS - BSS82B - CL BSS82C - CM C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO Peak Pulse Current ICM -5 V -800 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µ A Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector Cut-Off Current ICBO -10 -10 µA nA VCB=-50V, VCB=-50V, Tamb=150 °C Emitter Cut-Off Current IEBO -10 nA VBE=-3V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V V IC=-150mA,IB=-15mA* IC=-500mA,IB=50mA* Static Forward Current Transfer Ratio Transition Frequency BSS80B BSS80C hFE 40 100 fT 200 MAX. IE=-10µ A 120 300 IC=150mA,VCE=10V IC=150mA,VCE=10V MHz VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz Output Capacitance Cobo 8 pF Delay Time td 10 ns Rise Time tr 40 ns Storage Time ts 80 ns Fall Time tf 30 ns * Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% PAGE NUMBER VCC=-30V, IC=-150mA IB1=-IB2=-15mA