AP4409AGEH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
G
▼ Fast Switching Characteristic
BVDSS
-35V
RDS(ON)
8mΩ
ID
-85A
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
-85
A
3
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-75
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-55
A
-300
A
92.6
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
4
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
4
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
1.35
℃/W
62.5
℃/W
1
201112141
AP4409AGEH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-35
-
-
V
VGS=-10V, ID=-40A
-
-
8
mΩ
VGS=-4.5V, ID=-30A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
70
-
S
IDSS
Drain-Source Leakage Current
VDS=-28V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-30A
-
55
88
nC
Qgs
Gate-Source Charge
VDS=-28V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
35
-
nC
td(on)
Turn-on Delay Time
VDS=-20V
-
12
-
ns
tr
Rise Time
ID=-30A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=0.5Ω
-
48
-
ns
tf
Fall Time
VGS=-10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
4100 6600
pF
Coss
Output Capacitance
VDS=-25V
-
640
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
530
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-40A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4409AGEH-HF
200
250
o
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
-ID , Drain Current (A)
200
o
T C = 150 C
160
-ID , Drain Current (A)
T C = 25 C
150
100
50
120
80
40
0
0
0
2
4
6
8
10
12
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
13
I D = - 30 A
I D = -40 A
V G =-10V
Normalized RDS(ON)
T C =25 o C
11
RDS(ON) (mΩ)
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0V
9
1.4
1.0
7
0.6
5
2
4
6
8
25
10
-V GS , Gate-to-Source Voltage (V)
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
T j =150 o C
Normalized -VGS(th) (V)
30
-IS(A)
50
T j =25 o C
20
1.2
0.8
0.4
10
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4409AGEH-HF
f=1.0MHz
6000
I D = - 30 A
V DS = - 28 V
5000
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
4000
3000
4
2000
2
1000
0
C oss
C rss
0
0
20
40
60
80
100
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
Operation in this
area limited by
RDS(ON)
100
-ID (A)
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
DUTY=0.
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.0
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
SINGLE PULSE
0.01
1
0.1
1
10
0.00001
100
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
100
V DS = -5V
80
Limited by package
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
40
20
60
40
T j =150 o C
20
o
T j =25 C
0
o
T j = -40 C
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
150
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4