DSK BYV12 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
BYV12(Z)---BYV16(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
DO - 15
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Dimensions in millimeters
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV
12
BYV
13
BYV
14
BYV
15
BYV
16
UNITS
Maximum recurrent peak reverse voltage
VRRM
100
400
600
800
1000
V
Maximum RMS voltage
VRMS
70
280
420
560
700
V
Maximum DC blocking voltage
VDC
100
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
1.5
A
IFSM
60.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
5.0
100.0
A
Maximum reverse recovery time (Note1)
t rr
300
ns
Typical junction capacitance
CJ
18
pF
Rθ JA
45
TJ
- 55---- +150
TSTG
- 55---- +150
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
/W
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYV12(Z)---BYV16(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50
N.1.
10
N.1.
+0.5A
D.U.T.
( - )
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES: 1. RISE TIME = 7ns MAX. INPUT IMPEDANCE = 1M . 22PF
1cm
SET TIME BASEFOR 50/100 ns /cm
2. RISE TIME = 10ns MAX. SOURCE IMPEDANCE = 50
100
10
TJ=25
Pulse Width=300 µS
4
2
1.0
0.4
0.2
0 .1
0 . 06
0 . 04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIG.3-- FORWARD DERATING CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
1.6
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
20
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
60
80
100
120 140
160 180
AMBIENT TEMPERATURE,
FIG.4-- PEAK FORWARD SURGE CURRENT
FIG.7 --TYPICAL JUNCTION CAPACITANCE
80
200
70
TJ=125
8.3ms Single Half
Sine-Wave
60
50
40
30
20
10
0
1
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE,pF
PEAK FORWARD SURGE CURRENT
AMPERES
40
100
60
40
20
10
6
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
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