Diode Semiconductor Korea BYV12(Z)---BYV16(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.5 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop DO - 15 High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYV 12 BYV 13 BYV 14 BYV 15 BYV 16 UNITS Maximum recurrent peak reverse voltage VRRM 100 400 600 800 1000 V Maximum RMS voltage VRMS 70 280 420 560 700 V Maximum DC blocking voltage VDC 100 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 1.5 A IFSM 60.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.5 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR 5.0 100.0 A Maximum reverse recovery time (Note1) t rr 300 ns Typical junction capacitance CJ 18 pF Rθ JA 45 TJ - 55---- +150 TSTG - 55---- +150 Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYV12(Z)---BYV16(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES: 1. RISE TIME = 7ns MAX. INPUT IMPEDANCE = 1M . 22PF 1cm SET TIME BASEFOR 50/100 ns /cm 2. RISE TIME = 10ns MAX. SOURCE IMPEDANCE = 50 100 10 TJ=25 Pulse Width=300 µS 4 2 1.0 0.4 0.2 0 .1 0 . 06 0 . 04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FIG.3-- FORWARD DERATING CURRENT AVERAGE FORWARD RECTIFIED CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 1.6 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 20 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 60 80 100 120 140 160 180 AMBIENT TEMPERATURE, FIG.4-- PEAK FORWARD SURGE CURRENT FIG.7 --TYPICAL JUNCTION CAPACITANCE 80 200 70 TJ=125 8.3ms Single Half Sine-Wave 60 50 40 30 20 10 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES 40 100 60 40 20 10 6 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr