BUX98 BUX98A HIGH POWER NPN SILICON TRANSISTORS ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation. TO-3 (version R) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUX98 Unit BUX98A V CER Collector-Emitter Voltage (RBE = ≤ 10 Ω) 850 1000 V V CES Collector-Base Voltage (V BE = 0) 850 1000 V V CEO Collector-Emitter Voltage (IB = 0) 400 450 V V EBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 30 A I CM Collector Peak Current (tp < 5 ms) 60 A I CP Collector Peak Current non Rep. (tp < 20 µs) 80 A 8 A IC IB Base Current I BM Base Peak Current (t p < 5 ms) P tot Total Power Dissipation at T case < 25 o C T stg Storage Temperature Tj July 1997 Max Operating Junction Temperature 30 A 250 W -65 to 200 o C 200 o C 1/4 BUX98 / BUX98A THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER Parameter Test Conditions Typ. Max. Unit o 1 8 µA mA o 400 4 µA mA Collector Cut-off Current (R BE = 10 Ω) V CE = V CES V CE = V CES T CASE = 125 C Collector Cut-off Current (V BE = 0 ) V CE = V CES V CE = V CES T CASE = 125 C I CEO Collector Cut-off Current (I B = 0) V CE = V CEO 2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA I CES V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 200 mA for BUX98 for BUX98A V CER(sus) ∗ Collector-Emitter Sustaining Voltage L = 2mH for BUX98 for BUX98A V CE(sat) ∗ V BE(sat) ∗ Collector-Emitter Saturation Voltage for BUX98 I C = 20 A for BUX98A I C = 16 A I C = 24 A Base-Emitter Saturation Voltage for BUX98 I C = 20 A for BUX98A I C = 16 A t on Turn-on Time for BUX98 ts Storage Time V CC = 150 V tf Fall Time I B1 = - I B2 = 4 A t on Turn-on Time for BUX98A ts Storage Time V CC = 150 V tf Fall Time I B1 = - I B2 = 3.2 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % 2/4 Min. 400 450 V V 850 1000 V V IC = 1 A IB = 4 A 1.5 V I B = 3.2 A IB = 5 A 1.5 5 V V IB = 4 A 1.6 V I B = 3.2 A 1.6 V 1 µs 3 µs 0.8 µs I C = 20 A I C = 16 A 1 µs 3 µs 0.8 µs BUX98 / BUX98A TO-3 (version R) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 3/4 BUX98 / BUX98A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4