CHENMKO ENTERPRISE CO.,LTD CH715WPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SC-75/SOT-416 FEATURE * Small surface mounting dual element linear type. (SC-75/SOT-416) * Low VF and low IR. * High reliability (2) 0.1 0.2±0.05 (3) CONSTRUCTION (1) 1.0±0.1 0.1 0.3±0.05 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * Silicon epitaxial planar MARKING * 3M 0.6~0.9 0.15±0.05 0~0.1 0.1Min. CIRCUIT 1.6±0.2 (1) (2) Dimensions in millimeters (3) SC-75/SOT-416 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL CH715WPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 40 Volts Maximum RMS Voltage VRMS 28 Volts Maximum DC Blocking Voltage VDC 40 Volts IO 0.03 Amps IFSM 0.2 Amps pF Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CH715WPT UNITS Maximum Instantaneous Forward Voltage at IF= 1mA CHARACTERISTICS VF 0.37 Volts Maximum Average Reverse Current at VR= 10V IR 1.0 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. 2001-6 RATING CHARACTERISTIC CURVES ( CH715WPT ) FIG. 2 - REVERSE CHARACTERISTICS FIG. 1 - FORWARD CHARACTERISITICS 1 100u Typ. pulse measurement REVERSE CURRENT, (A) FORWARD CURRENT, (A) 100m Ta =125oC 10m 75oC 1m o 25 C 100u - 25oC 10u Ta =125oC 10u 75oC 1u 25oC 100n -25oC 10n 1n 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 FORWARD VOLTAGE, (V) 15 20 25 30 35 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 REVERSE RECOVERY TIME CHARACTERISTICS 10 REVERSE RECOVERY TIME, (nS) 100 JUNCTION CAPACITANCE, (pF) 10 10 1 0.1 5 2 1 0.5 0.2 0.1 0 5 10 15 REVERSE VOLTAGE, (V) 20 25 0 4 8 12 16 20 FORWARD CURRENT, (mA) 24 28