AP2304GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small package outline
D
▼ Surface mount package
BVDSS
25V
RDS(ON)
117mΩ
ID
2.7A
S
SOT-23
Description
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
25
V
±20
V
3
2.7
A
3
2.2
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200420043
AP2304GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
Max. Units
25
-
-
V
-
0.1
-
V/℃
-
117
mΩ
VGS=4.5V, ID=2A
-
190
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=4.5V, ID=2.5A
-
3.4
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=55oC)
VDS=25V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=2.5A
-
5.9
10
nC
Gate Threshold Voltage
gfs
Forward Transconductance
o
IGSS
2
Typ.
VGS=10V, ID=2.5A
VGS(th)
IDSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.1
-
nC
VDS=15V
-
4.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
11.5
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
12
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
110
-
pF
Coss
Output Capacitance
VDS=15V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
39
-
pF
Min.
Typ.
-
-
1
A
-
-
10
A
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode ) 1
VSD
2
Forward On Voltage
Test Conditions
VD=VG=0V , VS=1.2V
IS=1.25A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2304GN
10
10
T A =150 o C
o
T A =25 C
V GS =10V - 5V
V GS =10V - 5V
8
ID , Drain Current (A)
ID , Drain Current (A)
8
6
V GS =4V
4
2
6
V GS =4V
4
2
V GS =3V
V GS =3V
0
0
0
2
4
6
8
10
0
2
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
700
1.8
I D =2A
T A =25 ℃
V GS =10V
I D =2.5A
1.6
Normalized R DS(ON)
600
500
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
400
300
1.4
1.2
1.0
200
0.8
100
0.6
0
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.25
10
VGS(th) (V)
IF (A)
2.05
1
o
o
T j =150 C
T j =25 C
1.85
1.65
0
1.45
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2304GN
f=1.0MHz
1000
V DS =15V
I D =2.5A
8
6
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
100
C oss
4
C rss
2
0
10
0
1
2
3
4
5
6
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
ID (A)
10
1ms
1
10ms
0
100ms
T A =25 o C
Single Pulse
1s
DC
0
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q