isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT30 -80 BDT30A -100 BDT30B -120 BDT30C -140 BDT30 -40 BDT30A -60 BDT30B -80 BDT30C -100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB Base Current -0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 4.17 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT -40 BDT30A -60 IC= -30mA; IB= 0 V BDT30B -80 BDT30C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A -0.7 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.2 mA ICEO Collector Cutoff Current -0.1 mA -0.2 mA B BDT30/A VCE= -30V; IB= 0 BDT30B/C VCE= -60V; IB= 0 B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 15 Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -10V 3 fT 75 MHz Switching Times ton Turn-On Time 0.3 μs 1.0 μs IC= -1.0A; IB1= -IB2= -0.1A toff Turn-Off Time isc Website：www.iscsemi.cn