Central D40K1 Npn silicon darlington power transistor Datasheet

D40K SERIES
NPN SILICON
DARLINGTON POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D40K series types
are NPN silicon Darlington power transistors designed
for general purpose amplifier applications where high
gain is required.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCES
VCEO
D40K1, 3
30
D40K2, 4
50
UNITS
V
50
V
30
VEBO
IC
13
V
2.0
A
ICM
IB
3.0
A
0.2
A
PD
PD
1.67
W
10
W
TJ, Tstg
ΘJA
-65 to +150
°C
Thermal Resistance
75
°C/W
Thermal Resistance
ΘJC
12.5
°C/W
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICES
VCE=Rated VCES
IEBO
VEB=13V
BVCEO
lC=10mA (D40K1, 3)
30
BVCEO
lC=10mA (D40K2, 4)
VCE(SAT)
lC=1.5A, IB=3.0mA (D40K1, 2)
lC=1.0A, IB=2.0mA (D40K3, 4)
lC=1.5A, IB=3.0mA (D40K1, 2)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
lC=1.0A, IB=2.0mA (D40K3, 4)
VCE=5.0V, IC=200mA
VCE=5.0V, IC=1.5A (D40K1, 2)
fT
VCE=5.0V, IC=1.0A (D40K3, 4)
VCE=5.0V, lC=20mA
Ccb
VCB=10V, f=1.0MHz
MAX
500
UNITS
nA
100
nA
V
50
V
1.5
V
1.5
V
2.5
V
2.5
V
10K
1K
1K
75
MHz
10
pF
R1 (23-January 2012)
D40K SERIES
NPN SILICON
DARLINGTON POWER
TRANSISTOR
TO-202 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
Tab is common to pin 3
MARKING:
FULL PART NUMBER
R1 (23-January 2012)
w w w. c e n t r a l s e m i . c o m
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