Avic AV2907 Amplifier transistor pnp silicon Datasheet

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AV2907
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Collector – Base Voltage
VCBO
–60
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1
2
3
TO–92
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO
—
—
–0.01
–10
Emitter Cutoff Current
(VEB = –3.0 Vdc)
IEBO
—
–10
nAdc
Collector Cutoff Current
(VCE = –10 V)
ICEO
—
–10
nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IBEX
—
–50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
µAdc
v 300 ms, Duty Cycle v 2.0%.
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Cp
1
1
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AV2907
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
75
100
100
100
50
—
—
—
300
—
—
—
–0.4
–1.0
—
—
–1.3
–2.0
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
ton
—
50
ns
td
—
10
ns
tr
—
40
ns
toff
—
110
ns
ts
—
80
ns
tf
—
30
ns
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
hFE
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
Rise Time
Turn–Off Time
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc) (Figure 2)
v
v
1. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
–30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
–30 V
1.0 k
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
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–6.0 V
1.0 k
0
50
–16 V
+15 V
Figure 2. Storage and Fall Time Test Circuit
2
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AV2907
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = –1.0 V
VCE = –10 V
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
–1.0
–0.8
IC = –1.0 mA
–10 mA
–100 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
IB, BASE CURRENT (mA)
–3.0
–2.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = –30 V
IC/IB = 10
TJ = 25°C
tf
30
20
td @ VBE(off) = 0 V
3.0
–5.0 –7.0 –10
2.0 V
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT
–200 –300 –500
Figure 5. Turn–On Time
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100
70
50
30
t′s = ts – 1/8 tf
20
10
7.0
5.0
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
10
7.0
5.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
3
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AV2907
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = –1.0 mA, Rs = 430 Ω
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
–100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
Ceb
10
7.0
Ccb
5.0
3.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
50 k
400
300
200
100
80
VCE = –20 V
TJ = 25°C
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
–1.0
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
–0.8
V, VOLTAGE (VOLTS)
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
4.0
0
100
30
2.0
–0.1
6.0
2.0
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
VBE(on) @ VCE = –10 V
–0.6
–0.4
–0.2
RqVC for VCE(sat)
–0.5
–1.0
–1.5
RqVB for VBE
–2.0
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
–500
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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