UNISONIC TECHNOLOGIES CO., LTD DTA114T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT B R1 C E ORDERING INFORMATION Order Number Package Lead Free Halogen Free DTA114TG-AE3-R SOT-23 DTA114TG-AL3-R SOT-323 DTA114TG-AN3-R SOT-523 DTA114TL-T92-B DTA114TG-T92-B TO-92 DTA114TL-T92-K DTA114TG-T92-K TO-92 DTA114TL-T9S-K DTA114TG-T9S-K TO-92SP Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 1 2 3 E B C E B C E B C E C B E C B E C B Packing Tape Reel Tape Reel Tape Reel Tape Box Bulk Bulk MARKING SOT-23 / SOT-323 / SOT-523 TO-92 / TO-92SP AB4T www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1of 3 QW-R206-061.D DTA114T PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA SOT-23 200 SOT-323/SOT-523 150 Collector Power Dissipation PC mW TO-92 625 TO-92SP 550 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=-50μA -50 Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -50 Emitter-Base Breakdown Voltage BVEBO IE=-50μA -5 Collector-Emitter Saturation Voltage VCE(SAT) IC=-10mA, IB=-1mA Collector Cutoff Current ICBO VCB=-50V Emitter Cutoff Current IEBO VEB=-4V ON CHARACTERISTICS DC Current Gain hFE VCE=-5V, IC=-1mA 100 SMALL SIGNAL CHARACTERISTICS Input Resistance R1 7 Transition Frequency fT VCE=-10V, IE=5mA,f=100MHz (Note) Note: Transition frequency of the device UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT -0.3 -0.5 -0.5 250 600 10 250 13 V V V V μA μA kΩ MHz 2 of 3 QW-R206-061.D DTA114T Collector Saturation Voltage, VCE(SAT) (mV) TYPICAL CHARACTERISTICS DC Current Gain, hFE ■ PNP SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-061.D