CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small surface-mount package, M−FLATTM Absolute Maximum Ratings (Ta = 25°C) ① 0.16 0.65 ± 0.2 Power dissipation: P = 1.0 W 4.7 ± 0.2 • 3.8 ± 0.1 ② 1.75 ± 0.1 Rating Power dissipation P Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range Note : 1.0 (Note 1) Unit + 0.2 2.4 − 0.1 W 0.98 ± 0.1 Symbol 0 ~ 0.1 Characteristics ① ANODE ② CATHODE Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature / current / voltage, etc.) are within the TOSHIBA 3-4E1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.023 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 40°C Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Land pattern: 6 mm × 6 mm Board thickness: 1.6 mm Land pattern dimensions for reference only 2.1 Unit: mm 1.4 3.0 1.4 1 2011-06-20 CMZB68~CMZB390 Electrical Characteristics (Ta = 25°C) Zener Voltage Vz (V) Type Measurement Current IZ (mA) Dynamic Resistance rd (Ω) Measurement Current Max IZ (mA) Min Typ. Max CMZB68 61.2 68 74.8 4 120 CMZB75 67.5 75 82.5 4 CMZB82 73.8 82 90.2 CMZB100 90 100 CMZB110 99 110 CMZB150 135 CMZB180 Temperature Coefficient Forward Voltage VF (V) αT (mV/°C) Measurement Current IF (A) Reverse Current IR (μA) Max Measurement Voltage VR (V) Typ. Max Max 4 57 90 1.2 0.2 10 54.4 150 4 66 104 1.2 0.2 10 60 3 170 3 71 113 1.2 0.2 10 65.6 110 3 300 3 87 138 1.2 0.2 10 80 121 3 300 3 96 152 1.2 0.2 10 88 150 165 2 450 2 136 210 1.2 0.2 10 120 162 180 198 1.5 500 1.5 161 254 1.2 0.2 10 144 CMZB200 180 200 220 1.5 500 1.5 170 269 1.2 0.2 10 160 CMZB220 198 220 242 0.5 5000 0.5 200 309 1.2 0.2 10 176 CMZB240 216 240 264 0.5 5000 0.5 215 343 1.2 0.2 10 192 CMZB270 243 270 297 0.5 5000 0.5 243 385 1.2 0.2 10 216 CMZB300 270 300 330 0.5 5000 0.5 270 428 1.2 0.2 10 240 CMZB330 297 330 363 0.5 5000 0.5 296 473 1.2 0.2 10 264 CMZB390 351 390 429 0.5 10000 0.5 350 555 1.2 0.2 10 312 Marking Abbreviation Code Part No. Abbreviation Code Part No. B68 CMZB68 B2A CMZB200 B75 CMZB75 B2C CMZB220 B82 CMZB82 B2E CMZB240 B1A CMZB100 B2H CMZB270 B1B CMZB110 B3A CMZB300 B1F CMZB150 B3D CMZB330 B1J CMZB180 B3K CMZB390 2 2011-06-20 CMZB68~CMZB390 Handling Precaution 1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend when you design a circuit with a device. P: We recommend that the worst case power dissipation be no greater than 50% of the absolute maximum rating of power dissipation. Carry out adequate heat design. PRSM: We recommend that a device be used within the recommended area in the figure, PRSM-tw. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at Tj of below 120°C. 2) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a land pattern to match the appropriate thermal resistance value. 3) Please refer to the Rectifiers databook for further information. 3 2011-06-20 CMZB68~CMZB390 αT – V Z Ta max – P (typ.) 400 Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Land pattern: 6.0 mm × 6.0 mm board thickness: 1.6 mm 350 Temperature coefficient of Zener voltage αT (mV/°C) Maximum allowable temperature Ta max (°C) 160 120 80 40 300 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 Power dissipation P 1.0 0 1.2 0 50 100 150 200 250 Zener voltage (W) VZ 300 350 400 (V) PRSM – tW (reference value) 1000 tW Ta = 25°C Rectangular pulse 100 10 Recommended 0.1 1 Pulse width 10 tW (ms) rth (j-a) – t 1000 Transient thermal impedance rth (j-a) (°C/W) Non-repetitive peak reverse Power dissipation PRSM (W) PRSM Device mounted on a glass-epoxy board: Board size: 50 mm × 50 mm Land pattern: 2.1 mm × 1.4 mm Board thickness: 1.6 mm 100 10 1 0.1 0.001 Device mounted on a glass-epoxy board: Board size: 50 mm × 50 mm Land pattern: 6.0 mm × 6.0 mm Board thickness: 1.6 mm Device mounted on a ceramic board: Board size: 50 mm × 50 mm Land pattern: 2.0 mm × 2.0 mm Board thickness: 0.64 mm 0.01 0.1 1 10 100 1000 Time t (s) 4 2011-06-20 CMZB68~CMZB390 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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