Photodiode-Chip EPC-1300-0.5-3 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIR-region, no rear side metalization top side* 1 bond gold 1.0 µm rear side no metalization Ø 120 * Bond pad assigment: Pos. 1 - Anode Pos. 2 - Cathode Ø 120 850 ±20 2 Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.196 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C TC(ID) 7.4 %/K Typ Max Unit Active area Temperature coefficient of ID T = -40…120°C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 10 mA Forward voltage Breakdown voltage2) Symbol Min VF 0.8 V IR = 10 µA VR 5 Sensitivity range at 10 % VR = 0 V λ 800 Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm VR = 0 V Sλ 0.9 A/W Dark current VR = 5 V ID 250 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 1300 nm Specific detectivity 1) Junction capacitance V 1750 0.5 nm 1000 pA 1.0 GΩ NEP 1.1x10-14 W/ Hz λ = 1300 nm D* 4.0x1012 cm ⋅ Hz ⋅ W −1 VR = 0 V CJ 45 pF 1) measured on bare chip on TO-18 header 2) for information only Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-1300-0.5-3 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Photodiode-Chip EPC-1300-0.5-3 16.05.2008 rev. 03 T y p ic a l O p tic a l R e s p o n s iv ity 1 ,0 Responsivity (A/W) 0 ,8 0 ,6 0 ,4 0 ,2 0 ,0 400 600 800 1000 1200 1400 1600 1800 W a v e le n g th [n m ] D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re Dark Current [nA] 100 T K = 0 .7 4 % /K 10 1 20 40 60 80 100 120 A m b ie n t T e m p e ra tu re [°C ] Short-Circuit Current [arb. units] S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] 1 ,0 4 1 ,0 2 1 ,0 0 0 ,9 8 T C (I S H ) = -0 .3 7 % /K 0 ,9 6 0 ,9 4 0 ,9 2 0 ,9 0 0 20 40 60 80 100 120 140 A m b ie n t T e m p e ra tu re [°C ] We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545