Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - TO220AB PIN SYMBOL BYV32Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time VRRM VF IO(AV) trr PIN CONFIGURATION DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode (k) PARAMETER MAX. MAX. MAX. UNIT 100 100 150 150 200 200 V 0.85 20 0.85 20 0.85 20 V A 25 25 25 ns SYMBOL tab a1 a2 k 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Output current (both diodes conducting)1 IO(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature CONDITIONS MIN. - square wave δ = 0.5; Tmb ≤ 115 ˚C sinusoidal a = 1.57; Tmb ≤ 118 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms MAX. -100 100 100 100 -150 150 150 150 UNIT -200 200 200 200 V V V - 20 A - 18 A - 28 20 A A - 125 137 A A -40 - 78 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes conducting in free air Rth j-a MIN. TYP. MAX. UNIT - 60 2.4 1.6 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.72 1.00 0.2 6 0.85 1.15 0.6 30 V V mA µA MIN. TYP. MAX. UNIT STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) IF = 8 A; Tj = 150˚C IF = 20 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs - 20 25 ns - 1.5 2 A - 1 - V trr Irrm Vfr October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series I dI F 10 F PF / W BYV32 Tmb(max) / C Vo = 0.7 V dt a = 1.57 2.2 8 t 130.8 2.8 rr 4 6 135.6 4 140.4 2 145.2 time Q I I R 100% 10% s rrm 0 Fig.1. Definition of trr, Qs and Irrm I 126 1.9 Rs = 0.0183 Ohms 0 2 4 6 IF(AV) / A 8 150 10 Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns F 1000 IF=10A 100 time IF=1A V F 10 V V fr F 1 time Fig.2. Definition of Vfr 15 PF / W 10 dIF/dt (A/us) trr / ns 1000 D = 1.0 Rs = 0.0183 Ohms 0.5 10 126 IF=10A 100 0.2 IF=1A 0.1 5 tp I D= T 0 0 5 IF(AV) / A 10 tp T Tj = 100 C 138 10 t 150 15 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. October 1994 100 Fig.5. Maximum trr at Tj = 25 ˚C; per diode Tmb(max) / C 114 BYV32 Vo = 0.7 V 1 1 10 dIF/dt (A/us) 100 Fig.6. Maximum trr at Tj = 100 ˚C; per diode 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series 10 Irrm / A IF / A 30 Tj=150 C Tj=25 C IF=10A 1 20 IF=1A 0.1 10 typ max 0.01 10 -dIF/dt (A/us) 1 0 100 0 VF / V 1.5 1 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode 10 0.5 100 Qs / nC IF / A IF=10A 5A 2A 1A IF=10A 1 IF=1A 10 0.1 Tj = 100 C 1.0 0.01 1 10 -dIF/dt (A/us) 100 Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode 1.0 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Zth (K/W) 10 1 0.1 PD tp t 0.01 10 us 1 ms 0.1 s 10 s tp / s Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.12. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100