AOSMD AO4406 N-channel enhancement mode field effect transistor Datasheet

AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4406/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion. AO4406 and
AO4406L are electrically identical.
-RoHS Compliant
-AO4406L is Halogen Free
VDS (V) = 30V
ID = 11.5A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16.5mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
AF
Current
Pulsed Drain Current
ID
B
B
Repetitive Avalanche Energy L=0.3mH
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
V
11.5
TA=70°C
Avalanche Current B
Power Dissipation
Maximum
30
A
9.6
IDM
80
IAV
25
A
EAV
94
mJ
3
PD
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2.1
RθJA
RθJL
Typ
23
48
12
°C
Max
40
65
16
Units
°C/W
°C/W
°C/W
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AO4406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.8
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
60
TJ=55°C
100
19.2
VGS=4.5V, ID=10A
13.5
16.5
mΩ
VGS=2.5V, ID=8A
19.5
26
mΩ
1
V
4.5
A
2300
pF
142
200
pF
0.8
1.8
Ω
18
24
VDS=5V, ID=10A
Diode Forward Voltage
IS=10A,VGS=0V
IS
Maximum Body-Diode Continuous Current
25
1630
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
S
201
0.4
13.5
VGS=4.5V, VDS=15V, ID=11.5A
mΩ
38
0.83
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
V
A
16
TJ=125°C
Forward Transconductance
Rg
1.5
14
gFS
Output Capacitance
1
nA
11.5
VSD
Reverse Transfer Capacitance
µA
5
VGS=10V, ID=12A
Coss
V
1
IGSS
Crss
Units
30
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
pF
2.5
nC
nC
Qgd
Gate Drain Charge
5.5
tD(on)
Turn-On DelayTime
4
6
ns
tr
Turn-On Rise Time
5
7.5
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
nC
32
50
ns
5
10
ns
IF=10A, dI/dt=100A/µs
18.7
24
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
12.5
15
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
10V
4.5V
2.5V
3V
40
VDS=5V
25
20
ID(A)
ID (A)
30
15
20
125°C
2V
10
25°C
10
5
VGS=1.5V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
30
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
1.8
Normalized On-Resistance
ID=10A
25
VGS=10V
1.6
VGS=2.5V
RDS(ON) (mΩ )
0
20
VGS=4.5V
15
10
VGS=10V
5
VGS=4.5V
1.4
VGS=2.5V
1.2
1
0
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
40
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
VGS=0V
ID=10A
1.0E+00
30
125°C
125°C
IS (A)
RDS(ON) (mΩ )
1.0E-01
1.0E-02
20
25°C
25°C
1.0E-03
10
1.0E-04
1.0E-05
0
0.00
2.00
4.00
6.00
8.00
10.00
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4 VSD 0.6
1.0
(Volts) 0.8
Figure 6: Body-Diode Characteristics
1.2
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AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
2500
VDS=15V
ID=11.5A
2250
2000
Capacitance (pF)
VGS (Volts)
4
3
2
1
1750
Ciss
1500
1250
1000
750
Coss
Crss
500
250
0
0
0
4
8
12
16
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
24
0
100.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
50
RDS(ON)
limited
10µs
100µs
1ms
ID (Amps)
10ms
0.1s
1s
1.0
30
20
10
10s
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
40
Power (W)
10.0
0
DC
0.001
0.1
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
5
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
TA=25°C
60
tA =
50
40
Power Dissipation (W)
ID(A), Peak Avalanche Current
70
L ⋅ ID
BV − VDD
30
20
3
2
10s
1
SteadyState
10
0
0.00001
0
0.0001
Time in avalanche, tA (s)
Figure 12: Avalanche capability
Alpha & Omega Semiconductor, Ltd.
0.001
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note A)
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AO4406
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
L
Isd
+
VDC
Ig
Alpha & Omega Semiconductor, Ltd.
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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