BCP54 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ã 1997 Fairchild Semiconductor Corporation Max Units BCP54 1.5 12 83.3 W mW/°C °C/W BCP54 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 125°C VEB = 5.0 V, IC = 0 V 100 10 10 nA µA µA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, VCE = 2.0 V IC = 150 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V IC = 500 mA, IB = 50 mA VBE(on) Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 25 40 25 250 0.5 V 1.0 V Typical Pulsed Current Gain vs Collector Current 500 400 V CE = 5V 125 °C 300 25 °C 200 - 40 ºC 100 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 2 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.6 β = 10 0.5 0.4 125 ºC 0.3 25°C 0.2 - 40 ºC 0.1 0 0.01 I C 0.1 1 - COLLECTOR CURRENT (A) 3 BCP54 NPN General Purpose Amplifier (continued) (continued) VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25°C 0.6 125 ºC 0.4 VCE = 5V 0.2 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25°C 0.6 125 ºC 0.4 VCE = 5V 0.2 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P I CBO- COLLECTOR CURRENT (nA) VCB = 40V 10 1 0.1 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 Collector-Base Capacitance vs Collector-Base Voltage 40 30 20 10 0 0 4 12 16 20 24 28 Pr 38 Power Dissipation vs Ambient Temperature 1.5 500 V CE = 10V 400 300 200 100 0 8 V CB - COLLECTOR-BASE VOLTAGE (V) Gain Bandwidth Product vs Collector Current PD - POWER DISSIPATION (W) h FE - GAIN BANDWIDTH PRODUCT (MHz) 100 C OBO - COLLECTOR-BASE CAPACITANCE (pF) P 38 Collector-Cutoff Current vs Ambient Temperature 25 1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1.25 SOT-223 1 0.75 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 BCP54 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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